CTLST CAT28F010TR-70T, CAT28F010TR-12T, CAT28F010TI-90T, CAT28F010TI-70T, CAT28F010TI-12T Datasheet

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CTLST CAT28F010TR-70T, CAT28F010TR-12T, CAT28F010TI-90T, CAT28F010TI-70T, CAT28F010TI-12T Datasheet



CAT28F010		Licensed Intel
1 Megabit CMOS Flash Memory		second source

FEATURES

■Fast Read Access Time: 70/90/120 ns

■Low Power CMOS Dissipation: –Active: 30 mA max (CMOS/TTL levels)

–Standby: 1 mA max (TTL levels) –Standby: 100μA max (CMOS levels)

■High Speed Programming: –10μs per byte

–2 Sec Typ Chip Program

■0.5 Seconds Typical Chip-Erase

■12.0V ± 5% Programming and Erase Voltage

■Stop Timer for Program/Erase

■Commercial, Industrial and Automotive Temperature Ranges

■On-Chip Address and Data Latches

■JEDEC Standard Pinouts: –32-pin DIP

–32-pin PLCC –32-pin TSOP (8 x 20)

■100,000 Program/Erase Cycles

■10 Year Data Retention

■Electronic Signature

DESCRIPTION

The CAT28F010 is a high speed 128K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second.

It is pin and Read timing compatible with standard EPROM and E2PROM devices. Programming and Erase are performed through an operation and verify algorithm. The instructions are input via the I/O bus,

using a two write cycle scheme. Address and Data are latched to free the I/O bus and address bus during the write operation.

The CAT28F010 is manufactured using Catalyst’s advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles and has a data retention of 10 years. The device is available in JEDEC approved 32-pin plastic DIP, 32-pin PLCC or 32-pin TSOP packages.

BLOCK DIAGRAM

I/O0–I/O7

					I/O BUFFERS
		ERASE VOLTAGE
		SWITCH
WE	COMMAND	PROGRAM VOLTAGE		CE, OE LOGIC	DATA	SENSE
	REGISTER	SWITCH		CE, OE LOGIC	LATCH	AMP
	REGISTER	SWITCH			LATCH	AMP
CE
OE		LATCH
		LATCH			Y-GATING
					Y-GATING
		ADDRESS	Y-DECODER
A0–A16		ADDRESS			1,048,576 BIT
			X-DECODER		MEMORY
			X-DECODER		ARRAY
	VOLTAGE VERIFY
	SWITCH

5108 FHD F02

© 1998 by Catalyst Semiconductor, Inc.	Doc. No. 25005-0A 2/98 F-1
Characteristics subject to change without notice	1

CAT28F010

PIN CONFIGURATION

DIP Package (P)

VPP	1	32	VCC
A16	2	31	WE
A15	3	30	N/C
A12	4	29	A14
A7	5	28	A13
A6	6	27	A8
A5	7	26	A9	A7
A4	8	25	A11	A6
A3	9	24	OE	A5
A2	10	23	A10	A4
A1	11	22	CE	A3
A0	12	21	I/O7	A2
I/O0	13	20	I/O6	A1
I/O1	14	19	I/O5	A0
I/O2	15	18	I/O4	I/O0
VSS	16	17	I/O3

PIN FUNCTIONS

Pin Name

Type

Function

PLCC Package (N)

A0–A16

Input

Address Inputs for

memory addressing

N/C

I/O0–I/O7

I/O

Data Input/Output

Input

Chip Enable

32 31 30

A14

Input

Output Enable

A13

Input

Write Enable

A11

VCC

Voltage Supply

A10

VSS

Ground

VPP

Program/Erase

I/O7

14 15 16 17 18 19 20

Voltage Supply

I/O

					5108 FHD F01
					5108 FHD F01
				TSOP Package (Standard Pinout 8mm x 20mm) (T)
A11				1	32
							OE

			A9	2	31	A10

			A8	3	30			CE

A13				4	29	I/O7

A14				5	28	I/O6

		NC		6	27	I/O5

	WE			7	26	I/O4

VCC				8	25	I/O3

VPP				9	24	VSS

A16				10	23	I/O2

A15				11	22	I/O1

A12				12	21	I/O0

			A7	13	20	A0

			A6	14	19	A1

			A5	15	18	A2

			A4	16	17	A3

					TSOP Package (Reverse Pinout) (TR)
				1	32			A11
		OE

A10				2	31			A9

			CE	3	30			A8

I/O7				4	29			A13

I/O6				5	28			A14

I/O5				6	27			NC

I/O4				7	26				WE

I/O3				8	25			VCC

VSS				9	24			VPP

I/O2				10	23			A16

I/O1				11	22			A15

I/O0				12	21			A12

			A0	13	20			A7

			A1	14	19			A6

			A2	15	18			A5

			A3	16	17			A4

5108 FHD F14

Doc. No. 25005-0A 2/98 F-1	2

CAT28F010

ABSOLUTE MAXIMUM RATINGS*

*COMMENT

Temperature Under Bias ...................	–55°C to +95°C
Storage Temperature .......................	–65°C to +150°C
Voltage on Any Pin with
Respect to Ground(1) ...........	–2.0V to +VCC + 2.0V
Voltage on Pin A9 with
Respect to Ground(1) ...................	–2.0V to +13.5V
VPP with Respect to Ground
during Program/Erase(1) ..............	–2.0V to +14.0V
VCC with Respect to Ground(1) ............		–2.0V to +7.0V
Package Power Dissipation
Capability (TA = 25°C) ..................................		1.0 W
Lead Soldering Temperature (10 secs)		............ 300°C
Output Short Circuit Current(2) ........................		100 mA

RELIABILITY CHARACTERISTICS

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.

Symbol	Parameter	Min.	Max.	Units	Test Method

NEND(3)	Endurance	100K		Cycles/Byte	MIL-STD-883, Test Method 1033
TDR(3)	Data Retention	10		Years	MIL-STD-883, Test Method 1008
VZAP(3)	ESD Susceptibility	2000		Volts	MIL-STD-883, Test Method 3015
ILTH(3)(4)	Latch-Up	100		mA	JEDEC Standard 17

CAPACITANCE TA = 25°C, f = 1.0 MHz

			Limits

Symbol	Test	Min		Max.	Units	Conditions

CIN(3)	Input Pin Capacitance			6	pF	VIN = 0V
COUT(3)	Output Pin Capacitance			10	pF	VOUT = 0V
CVPP(3)	VPP Supply Capacitance			25	pF	VPP = 0V

Note:

(1)The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC voltage on output pins is VCC +0.5V, which may overshoot to VCC + 2.0V for periods of less than 20ns.

(2)Output shorted for no more than one second. No more than one output shorted at a time.

(3)This parameter is tested initially and after a design or process change that affects the parameter.

(4)Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to VCC +1V.

3	Doc. No. 25005-0A 2/98 F-1

CAT28F010

D.C. OPERATING CHARACTERISTICS

VCC = +5V ±10%, unless otherwise specified.

Limits

Symbol

Parameter

Min.

Max.

Unit

Test Conditions

ILI

Input Leakage Current

±1

μA

VIN = VCC or VSS

VCC = 5.5V,

= VIH

ILO

Output Leakage Current

±1

μA

VOUT = VCC or VSS,

VCC = 5.5V, OE = VIH

ISB1

VCC Standby Current CMOS

100

μA

= VCC ±0.5V,

VCC = 5.5V

ISB2

VCC Standby Current TTL

CE = VIH, VCC = 5.5V

ICC1

VCC Active Read Current

VCC = 5.5V, CE = VIL,

IOUT = 0mA, f = 6 MHz

ICC2(1)

VCC Programming Current

VCC = 5.5V,

Programming in Progress

ICC3(1)

VCC Erase Current

VCC = 5.5V,

Erasure in Progress

ICC4(1)

VCC Prog./Erase Verify Current

VCC = 5.5V, Program or

Erase Verify in Progress

IPPS

VPP Standby Current

±10

μA

VPP = VPPL

IPP1

VPP Read Current

200

μA

VPP = VPPH

IPP2(1)

VPP Programming Current

VPP = VPPH,

Programming in Progress

IPP3(1)

VPP Erase Current

VPP = VPPH,

Erasure in Progress

IPP4(1)

VPP Prog./Erase Verify Current

VPP = VPPH, Program or

Erase Verify in Progress

VIL

Input Low Level TTL

–0.5

0.8

VILC

Input Low Level CMOS

–0.5

0.8

VOL

Output Low Level

0.45

IOL = 5.8mA, VCC = 4.5V

VIH

Input High Level TTL

VCC+0.5

VIHC

Input High Level CMOS

VCC*0.7

VCC+0.5

VOH1

Output High Level TTL

2.4

IOH = –2.5mA, VCC = 4.5V

VOH2

Output High Level CMOS

VCC–0.4

IOH = –400μA, VCC = 4.5V

VID

A9 Signature Voltage

11.4

A9 = VID

IID(1)

A9 Signature Current

200

μA

A9 = VID

VLO

VCC Erase/Prog. Lockout Voltage

2.5

Note:

(1) This parameter is tested initially and after a design or process change that affects the parameter.

Doc. No. 25005-0A 2/98 F-1	4

					CAT28F010
SUPPLY CHARACTERISTICS

			Limits

Symbol	Parameter	Min		Max.	Unit

VCC	VCC Supply Voltage	4.5		5.5	V
VPPL	VPP During Read Operations	0		6.5	V
VPPH	VPP During Read/Erase/Program	11.4		12.6	V

A.C. CHARACTERISTICS, Read Operation

VCC = +5V ±10%, unless otherwise specified.

			28F010-70(8)		28F010-90(7)		28F010-12(7)
JEDEC	Standard
Symbol	Symbol	Parameter	Min.	Max.	Min.	Max.	Min.	Max.	Unit

tAVAV	tRC	Read Cycle Time	70		90			120	ns
tELQV	tCE	CE Access Time		70		90		120	ns
tAVQV	tACC	Address Access Time		70		90		120	ns
tGLQV	tOE	OE Access Time		28		35		50	ns
tAXQX	tOH	Output Hold from Address	0		0		0		ns
		OE/CE Change

tGLQX	tOLZ(1)(6)	OE to Output in Low-Z	0		0		0		ns
t	t (1)(6)	CE to Output in Low-Z	0		0		0		ns
ELZX	LZ
tGHQZ	tDF(1)(2)	OE High to Output High-Z		20		20		30	ns
tEHQZ	tDF(1)(2)	CE High to Output High-Z		30		30		40	ns
(1)	-	Write Recovery Time	6		6		6		μs
tWHGL	-	Write Recovery Time	6		6		6		μs
		Before Read

Figure 1. A.C. Testing Input/Output Waveform(3)(4)(5)

Figure 2. Highspeed A.C. Testing Input/Output

Waveform(3)(4)(5)

2.4 V

2.0 V

3.0 V

INPUT PULSE LEVELS

REFERENCE POINTS

INPUT PULSE LEVELS

1.5 V

REFERENCE POINTS

0.45 V

0.8 V

0.0 V

5108 FHD F03

5108 FHD F03A

Testing Load Circuit (example)

1.3V

1N914

3.3K

DEVICE

OUT

DEVICE

UNDER

OUT

UNDER

TEST

CL = 100 pF

TEST

CL = 30 pF

CL INCLUDES JIG CAPACITANCE

5108 FHD F04

Note:

5108 FHD F05

(1)This parameter is tested initially and after a design or process change that affects the parameter.

(2)Output floating (High-Z) is defined as the state where the external data line is no longer driven by the output buffer.

(3)Input Rise and Fall Times (10% to 90%) < 10 ns.

(4)Input Pulse Levels = 0.45V and 2.4V. For High Speed Input Pulse Levels 0.0V and 3.0V.

(5)Input and Output Timing Reference = 0.8V and 2.0V. For High Speed Input and Output Timing Reference = 1.5V.

(6)Low-Z is defined as the state where the external data may be driven by the output buffer but may not be valid.

(7)For load and reference points, see Fig. 1

(8)For load and reference points, see Fig. 2

5	Doc. No. 25005-0A 2/98 F-1

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