CTLST CAT24C44SI-TE13, CAT24C44SA-TE13, CAT24C44S-TE13, CAT24C44PI-TE13, CAT24C44PA-TE13 Datasheet
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CAT24C44
256-Bit Serial Nonvolatile CMOS Static RAM
FEATURES
■ Single 5V Supply |
■ JEDEC Standard Pinouts: |
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■ Infinite E2PROM to RAM Recall |
–8-pin DIP |
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■ CMOS and TTL Compatible I/O |
–8-pin SOIC |
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■ 100,000 Program/Erase Cycles (E2PROM) |
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■ Low CMOS Power Consumption: |
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■ Auto Recall on Power-up |
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–Active: 3 mA Max. |
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–Standby: 30μA Max. |
■ Commercial, Industrial and Automotive |
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■ Power Up/Down Protection |
Temperature Ranges |
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■ 10 Year Data Retention |
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DESCRIPTION
The CAT24C44 Serial NVRAM is a 256-bit nonvolatile memory organized as 16 words x 16 bits. The high speed Static RAM array is bit for bit backed up by a nonvolatile E2PROM array which allows for easy transfer of data from RAM array to E2PROM (STORE) and from E2PROM to RAM (RECALL). STORE operations are completed in 10ms max. and RECALL operations typically within 1.5μs. The CAT24C44 features unlimited RAM write operations either through external RAM writes or internal recalls from E2PROM. Internal false
store protection circuitry prohibits STORE operations when VCC is less than 3.5V (typical) ensuring E2PROM data integrity.
The CAT24C44 is manufactured using Catalyst’s advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles (E2PROM) and has a data retention of 10 years. The device is available in JEDEC approved 8-pin plastic DIP and SOIC packages.
PIN CONFIGURATION |
PIN FUNCTIONS |
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DIP Package (P) |
SOIC Package (S) |
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CE |
1 |
8 |
VCC |
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CE |
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1 |
8 |
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VCC |
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2 |
7 |
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SK |
2 |
7 |
STORE |
SK |
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STORE |
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DI |
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3 |
6 |
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3 |
6 |
RECALL |
DI |
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RECALL |
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DO |
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5 |
VSS |
DO |
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4 |
5 |
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VSS |
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5157 FHD F01
Pin Name |
Function |
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SK |
Serial Clock |
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DI |
Serial Input |
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DO |
Serial Data Output |
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CE |
Chip Enable |
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RECALL |
Recall |
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STORE |
Store |
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VCC |
+5V |
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VSS |
Ground |
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© 1998 by Catalyst Semiconductor, Inc. |
Doc. No. 25019-0A 2/98 N-1 |
Characteristics subject to change without notice |
1 |
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CAT24C44
BLOCK DIAGRAM
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E2PROM ARRAY |
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RECALL |
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ROW |
STATIC RAM |
STORE |
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DECODE |
ARRAY |
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STORE |
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CONTROL |
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256-BIT |
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LOGIC |
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RECALL |
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CE |
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DI |
INSTRUCTION |
COLUMN |
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DO |
REGISTER |
DECODE |
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SK |
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VCC |
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VSS |
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INSTRUCTION |
4-BIT |
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DECODE |
COUNTER |
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5157 FHD F09
MODE SELECTION(1)(2)
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Software |
Write Enable |
Previous Recall |
Mode |
STORE |
RECALL |
Instruction |
Latch |
Latch |
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Hardware Recall(3) |
1 |
0 |
NOP |
X |
X |
Software Recall |
1 |
1 |
RCL |
X |
X |
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Hardware Store(3) |
0 |
1 |
NOP |
SET |
TRUE |
Software Store |
1 |
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STO |
SET |
TRUE |
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X = Don’t Care
POWER-UP TIMING(4)
Symbol |
Parameter |
Min. |
Max. |
Units |
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VCCSR |
VCC Slew Rate |
0.5 |
0.005 |
V/m |
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tpur |
Power-Up to Read Operations |
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200 |
μs |
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tpuw |
Power-Up to Write or Store Operation |
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5 |
ms |
Note:
(1)The store operation has priority over all the other operations.
(2)The store operation is inhibited when VCC is below ≈ 3.5V.
(3)NOP designates that the device is not currently executing an instruction.
(4)This parameter is tested initially and after a design or process change that affects the parameter.
Doc. No. 25019-0A 2/98 N-1 |
2 |
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CAT24C44
ABSOLUTE MAXIMUM RATINGS* |
*COMMENT |
Temperature Under Bias ................. |
–55°C to +125°C |
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Storage Temperature ....................... |
–65°C to +150°C |
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Voltage on Any Pin with |
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Respect to Ground(2) ............. |
–2.0 to +VCC +2.0V |
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VCC with Respect to Ground ............... |
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–2.0V to +7.0V |
Package Power Dissipation |
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Capability (Ta = 25°C) ................................... |
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1.0W |
Lead Soldering Temperature (10 secs) |
............ 300°C |
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Output Short Circuit Current(3) ........................ |
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100 mA |
RELIABILITY CHARACTERISTICS
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
Symbol |
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Min. |
Max. |
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Units |
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Reference Test Method |
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NEND(1) |
Endurance |
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100,000 |
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Cycles/Byte |
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MIL-STD-883, Test Method 1033 |
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TDR(1) |
Data Retention |
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10 |
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Years |
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MIL-STD-883, Test Method 1008 |
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VZAP(1) |
ESD Susceptibility |
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2000 |
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Volts |
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MIL-STD-883, Test Method 3015 |
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ILTH(1)(4) |
Latch-Up |
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100 |
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mA |
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JEDEC Standard 17 |
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D.C. OPERATING CHARACTERISTICS |
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VCC = 5V ±10%, unless otherwise specified. |
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Limits |
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Symbol |
Parameter |
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Min. |
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Typ. |
Max. |
Unit |
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Conditions |
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ICCO |
Current Consumption (Operating) |
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3 |
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mA |
Inputs = 5.5V, TA = 0°C |
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All Outputs Unloaded |
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ISB |
Current Consumption (Standby) |
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30 |
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μA |
CE = VIL |
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ILI |
Input Current |
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2 |
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μA |
0 ≤ VIN ≤ 5.5V |
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ILO |
Output Leakage Current |
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10 |
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μA |
0 ≤ VOUT ≤ 5.5V |
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VIH |
High Level Input Voltage |
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2 |
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VCC |
V |
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VIL |
Low Level Input Voltage |
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0 |
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0.8 |
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V |
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VOH |
High Level Output Voltage |
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2.4 |
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V |
IOH = –2mA |
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VOL |
Low Level Output Voltage |
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0.4 |
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V |
IOL = 4.2mA |
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CAPACITANCE TA = 25°C, f = 1.0 MHz, VCC = 5V |
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Symbol |
Parameter |
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Max. |
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Unit |
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Conditions |
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CI/O(1) |
Input/Output Capacitance |
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10 |
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pF |
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VI/O = 0V |
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CIN(1) |
Input Capacitance |
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6 |
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pF |
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VIN = 0V |
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Note:
(1)This parameter is tested initially and after a design or process change that affects the parameter.
(2)The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.
(3)Output shorted for no more than one second. No more than one output shorted at a time.
(4)Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to VCC +1V.
3 |
Doc. No. 25019-0A 2/98 N-1 |
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