CTLST CAT24WC256KA-3TE13, CAT24WC256KA-1.8TE13, CAT24WC256K-TE13, CAT24WC256K-3TE13, CAT24WC256K-1.8TE13 Datasheet

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CTLST CAT24WC256KA-3TE13, CAT24WC256KA-1.8TE13, CAT24WC256K-TE13, CAT24WC256K-3TE13, CAT24WC256K-1.8TE13 Datasheet

Preliminary

CAT24WC256

256K-Bit I2C Serial CMOS E2PROM

FEATURES

1MHz I2C Bus Compatible*

1.8 to 6 Volt Operation

Low Power CMOS Technology

64-Byte Page Write Buffer

Self-Timed Write Cycle with Auto-Clear

Commercial, Industrial and Automotive Temperature Ranges

Write Protect Feature

– Entire Array Protected When WP at V

IH

100,000 Program/Erase Cycles

100 Year Data Retention

8-Pin DIP or 8-Pin SOIC

DESCRIPTION

The CAT24WC256 is a 256K-bit Serial CMOS E2PROM internally organized as 32,768 words of 8 bits each. Catalyst’s advanced CMOS technology substantially reduces device power requirements. The

CAT24WC256 features a 64-byte page write buffer. The device operates via the I2C bus serial interface and is available in 8-pin DIP or 8-pin SOIC packages.

PIN CONFIGURATION

BLOCK DIAGRAM

DIP Package (P)

EXTERNAL LOAD

A0

1

8

VCC

A1

2

7

WP

NC

3

6

SCL

VSS

4

5

SDA

SOIC Package (K)

A0

 

 

 

1

8

 

 

 

VCC

 

 

 

 

 

 

 

 

2

7

 

 

 

A1

 

 

 

 

 

 

WP

 

 

 

3

6

 

 

 

NC

 

 

 

 

 

 

SCL

 

 

 

4

5

 

 

 

 

VSS

 

 

 

 

 

 

SDA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

24WC256 F01

PIN FUNCTIONS

 

 

 

Pin Name

 

Function

 

 

A0, A1

Address Inputs

 

 

SDA

Serial Data/Address

 

 

SCL

Serial Clock

 

 

WP

Write Protect

 

 

VCC

+1.8V to +6.0V Power Supply

 

 

VSS

Ground

 

 

NC

No Connect

 

 

 

 

 

DOUT

 

SENSE AMPS

 

SHIFT REGISTERS

 

ACK

 

 

 

VCC

 

 

 

VSS

WORD ADDRESS

 

COLUMN

BUFFERS

 

DECODERS

 

 

 

 

 

512

SDA

START/STOP

 

 

LOGIC

 

 

 

 

 

 

XDEC

512

E2PROM

 

512X512

 

 

 

WP

CONTROL

 

 

LOGIC

 

 

 

 

 

 

 

DATA IN STORAGE

HIGH VOLTAGE/

TIMING CONTROL

SCL STATE COUNTERS

A0 SLAVE

A1 ADDRESS

COMPARATORS

24WC256 F02

* Catalyst Semiconductor is licensed by Philips Corporation to carry the I2C Bus Protocol.

© 1998 by Catalyst Semiconductor, Inc.

Doc. No. 25061-00 6/99 S-1

Characteristics subject to change without notice

1

CAT24WC256

Preliminary

ABSOLUTE MAXIMUM RATINGS*

*COMMENT

Temperature Under Bias .................

–55°C to +125°C

Storage Temperature .......................

–65°C to +150°C

Voltage on Any Pin with

 

 

Respect to Ground(1) ...........

–2.0V to +VCC + 2.0V

VCC with Respect to Ground ...............

 

–2.0V to +7.0V

Package Power Dissipation

 

 

Capability (Ta = 25°C) ...................................

 

1.0W

Lead Soldering Temperature (10 secs)

............ 300°C

Output Short Circuit Current(2) ........................

 

100mA

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.

RELIABILITY CHARACTERISTICS

Symbol

Parameter

Min.

Max.

Units

Reference Test Method

 

 

 

 

 

 

NEND(3)

Endurance

100,000

 

Cycles/Byte

MIL-STD-883, Test Method 1033

TDR(3)

Data Retention

100

 

Years

MIL-STD-883, Test Method 1008

VZAP(3)

ESD Susceptibility

2000

 

Volts

MIL-STD-883, Test Method 3015

ILTH(3)(4)

Latch-up

100

 

mA

JEDEC Standard 17

D.C. OPERATING CHARACTERISTICS

VCC = +1.8V to +6.0V, unless otherwise specified.

 

 

 

Limits

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min.

 

Typ.

Max.

Units

Test Conditions

 

 

 

 

 

 

 

 

ICC1

Power Supply Current - Read

 

 

 

1

mA

fSCL = 100 KHz

 

 

 

 

 

 

 

VCC=5V

ICC2

Power Supply Current - Write

 

 

 

3

mA

fSCL = 100KHz

 

 

 

 

 

 

 

VCC=5V

ISB(5)

Standby Current

 

 

 

0

μA

VIN = GND or VCC

 

 

 

 

 

 

 

VCC=5V

ILI

Input Leakage Current

 

 

 

1

μA

VIN = GND to VCC

ILO

Output Leakage Current

 

 

 

1

μA

VOUT = GND to VCC

VIL

Input Low Voltage

–1

 

 

VCC x 0.3

V

 

VIH

Input High Voltage

VCC x 0.7

 

 

VCC + 0.5

V

 

VOL1

Output Low Voltage (VCC = +3.0V)

 

 

 

0.4

V

IOL = 3.0 mA

VOL2

Output Low Voltage (VCC = +1.8V)

 

 

 

0.5

V

IOL = 1.5 mA

CAPACITANCE TA = 25°C, f = 1.0 MHz, VCC = 5V

Symbol

Test

Max.

Units

Conditions

 

 

 

 

 

CI/O(3)

Input/Output Capacitance (SDA)

8

pF

VI/O = 0V

CIN(3)

Input Capacitance (SCL, WP, A0, A1)

6

pF

VIN = 0V

Note:

(1)The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC voltage on output pins is VCC +0.5V, which may overshoot to VCC + 2.0V for periods of less than 20ns.

(2)Output shorted for no more than one second. No more than one output shorted at a time.

(3)This parameter is tested initially and after a design or process change that affects the parameter.

(4)Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to VCC +1V.

(5)Standby current (ISB ) = 0 μA (<900 nA).

Doc. No. 25061-00 6/99 S-1

2

Preliminary

CAT24WC256

A.C. CHARACTERISTICS

VCC = +1.8V to +6V, unless otherwise specified

Output Load is 1 TTL Gate and 100pF

Read & Write Cycle Limits

Symbol

Parameter

VCC=1.8V - 6.0V

VCC=2.5V - 6.0V

VCC=3.0V - 5.5V

 

 

 

Min.

Max.

Min.

Max.

Min.

Max.

Units

 

 

 

 

 

 

 

 

 

FSCL

Clock Frequency

 

100

 

400

 

1000

kHz

 

 

 

 

 

 

 

 

 

tAA

SCL Low to SDA Data Out

0.1

3.5

0.05

0.9

0.05

0.55

μs

 

and ACK Out

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tBUF(2)

Time the Bus Must be Free Before

4.7

 

1.2

 

0.5

 

μs

 

a New Transmission Can Start

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tHD:STA

Start Condition Hold Time

4.0

 

0.6

 

0.25

 

μs

 

 

 

 

 

 

 

 

 

tLOW

Clock Low Period

4.7

 

1.2

 

0.6

 

μs

 

 

 

 

 

 

 

 

 

tHIGH

Clock High Period

4.0

 

0.6

 

0.4

 

μs

 

 

 

 

 

 

 

 

 

tSU:STA

Start Condition Setup Time

4.0

 

0.6

 

0.25

 

μs

 

(for a Repeated Start Condition)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tHD:DAT

Data In Hold Time

0

 

0

 

0

 

ns

 

 

 

 

 

 

 

 

 

tSU:DAT

Data In Setup Time

100

 

100

 

100

 

ns

 

 

 

 

 

 

 

 

 

tR(2)

SDA and SCL Rise Time

 

1.0

 

0.3

 

0.3

μs

tF(2)

SDA and SCL Fall Time

 

300

 

300

 

100

ns

tSU:STO

Stop Condition Setup Time

4.7

 

0.6

 

0.25

 

μs

 

 

 

 

 

 

 

 

 

tDH

Data Out Hold Time

100

 

50

 

50

 

ns

 

 

 

 

 

 

 

 

 

tWR

Write Cycle Time

 

10

 

10

 

5

ms

 

 

 

 

 

 

 

 

 

Power-Up Timing (2)(3)

Symbol

Parameter

Max.

Units

 

 

 

 

tPUR

Power-Up to Read Operation

1

ms

 

 

 

 

tPUW

Power-Up to Write Operation

1

ms

 

 

 

 

Note:

(1)AC measurement conditions:

RL (connects to VCC): 0.3VCC to 0.7 VCC Input rise and fall times: < 50ns

Input and output timing reference voltages: 0.5 VCC

(2)This parameter is tested initially and after a design or process change that affects the parameter.

(3)tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated.

The write cycle time is the time from a valid stop condition of a write sequence to the end of the internal program/erase cycle. During the write cycle, the bus

interface circuits are disabled, SDA is allowed to remain high, and the device does not respond to its slave address.

3

Doc. No. 25061-00 6/99 S-1

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