CTLST CAT28C257T13I-90T, CAT28C257T13I-15T, CAT28C257T13I-12T, CAT28C257T13A-90T, CAT28C257T13A-15T Datasheet
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Advanced
CAT28C257
256K-Bit CMOS PARALLEL E2PROM
FEATURES
■Fast Read Access Times: 90/120/150 ns
■Low Power CMOS Dissipation:
–Active: 25 mA Max. –Standby: 150μA Max.
■Simple Write Operation:
–On-Chip Address and Data Latches –Self-Timed Write Cycle with Auto-Clear
■Fast Write Cycle Time: –5ms Max
■CMOS and TTL Compatible I/O
■Automatic Page Write Operation: –1 to 128 Bytes in 5ms
–Page Load Timer
■End of Write Detection: –Toggle Bit
–DATA Polling
■Hardware and Software Write Protection
■100,000 Program/Erase Cycles
■100 Year Data Retention
■Commercial, Industrial and Automotive Temperature Ranges
DESCRIPTION
The CAT28C257 is a fast, low power, 5V-only CMOS Parallel E2PROM organized as 32K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with autoclear and VCC power up/down write protection eliminate additional timing and protection hardware. DATA Polling and Toggle status bits signal the start and end of the selftimed write cycle. Additionally, the CAT28C257 features hardware and software write protection.
The CAT28C257 is manufactured using Catalyst’s advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles and has a data retention of 100 years. The device is available in JEDEC approved 28-pin DIP, 28-pin TSOP or 32-pin PLCC packages.
BLOCK DIAGRAM |
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A7–A14 |
ADDR. BUFFER |
ROW |
32,768 x 8 |
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& LATCHES |
DECODER |
E2PROM |
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ARRAY |
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VCC |
INADVERTENT |
HIGH VOLTAGE |
128 BYTE PAGE |
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WRITE |
GENERATOR |
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REGISTER |
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PROTECTION |
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CE |
CONTROL |
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OE |
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WE |
LOGIC |
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I/O BUFFERS |
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DATA POLLING |
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TIMER |
AND |
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TOGGLE BIT |
I/O0–I/O7 |
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A0–A6 |
ADDR. BUFFER |
COLUMN |
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DECODER |
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5096 FHD F02 |
© 1998 by Catalyst Semiconductor, Inc. |
1 |
Doc. No. 25073-00 2/98 |
Characteristics subject to change without notice |
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CAT28C257 |
Advanced |
PIN CONFIGURATION
DIP Package (P) |
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PLCC Package (N) |
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A14 |
1 |
28 |
VCC |
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7 |
12 |
14 |
NC |
CC |
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WE |
13 |
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A |
A |
A |
V |
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A |
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A12 |
2 |
27 |
WE |
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A7 |
3 |
26 |
A13 |
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4 |
3 |
2 |
1 |
32 31 30 |
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A6 |
4 |
25 |
A8 |
A6 |
5 |
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29 |
A8 |
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A5 |
5 |
24 |
A9 |
A5 |
6 |
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28 |
A9 |
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A4 |
6 |
23 |
A11 |
A4 |
7 |
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27 |
A11 |
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A3 |
7 |
22 |
OE |
A3 |
8 |
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26 |
NC |
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A2 |
8 |
21 |
A10 |
A2 |
9 |
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25 |
OE |
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A1 |
9 |
20 |
CE |
A1 |
10 |
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24 |
A10 |
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A0 |
10 |
19 |
I/O7 |
A0 |
11 |
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23 |
CE |
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I/O0 |
11 |
18 |
I/O6 |
NC |
12 |
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22 |
I/O7 |
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I/O1 |
12 |
17 |
I/O5 |
I/O0 |
13 |
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21 |
I/O6 |
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I/O2 |
13 |
16 |
I/O4 |
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VSS |
14 |
15 |
I/O3 |
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1 |
2 |
SS |
NC |
3 |
4 |
5 |
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I/O |
I/O |
V |
I/O |
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I/O |
I/O |
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5096 FHD F01
TSOP Package (8mm X 13.4mm) (T13)
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OE |
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1 |
28 |
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A10 |
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A11 |
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2 |
27 |
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CE |
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A9 |
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3 |
26 |
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I/O7 |
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A8 |
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4 |
25 |
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I/O6 |
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A13 |
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5 |
24 |
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I/O5 |
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WE |
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6 |
23 |
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I/O4 |
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VCC |
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7 |
22 |
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I/O3 |
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A14 |
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8 |
21 |
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GND |
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A12 |
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9 |
20 |
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I/O2 |
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A7 |
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10 |
19 |
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I/O1 |
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A6 |
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11 |
18 |
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I/O0 |
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A5 |
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17 |
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A0 |
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A4 |
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16 |
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A1 |
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A3 |
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14 |
15 |
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A2 |
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28C257 F03
PIN FUNCTIONS
Pin Name |
Function |
Pin Name |
Function |
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A0–A14 |
Address Inputs |
WE |
Write Enable |
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I/O0–I/O7 |
Data Inputs/Outputs |
VCC |
5V Supply |
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CE |
Chip Enable |
VSS |
Ground |
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OE |
Output Enable |
NC |
No Connect |
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Doc. No. 25073-00 2/98 |
2 |
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Advanced |
CAT28C257 |
ABSOLUTE MAXIMUM RATINGS* |
*COMMENT |
Temperature Under Bias ................. |
–55°C to +125°C |
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Storage Temperature ....................... |
–65°C to +150°C |
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Voltage on Any Pin with |
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Respect to Ground(2) ........... |
–2.0V to +VCC + 2.0V |
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VCC with Respect to Ground ............... |
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–2.0V to +7.0V |
Package Power Dissipation |
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Capability (Ta = 25°C)................................... |
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1.0W |
Lead Soldering Temperature (10 secs) |
............ 300°C |
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Output Short Circuit Current(3) ........................ |
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100 mA |
RELIABILITY CHARACTERISTICS
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
Symbol |
Parameter |
Min. |
Max. |
Units |
Test Method |
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NEND(1) |
Endurance |
104 or 105 |
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Cycles/Byte |
MIL-STD-883, Test Method 1033 |
TDR(1) |
Data Retention |
100 |
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Years |
MIL-STD-883, Test Method 1008 |
VZAP(1) |
ESD Susceptibility |
2000 |
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Volts |
MIL-STD-883, Test Method 3015 |
ILTH(1)(4) |
Latch-Up |
100 |
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mA |
JEDEC Standard 17 |
D.C. OPERATING CHARACTERISTICS
VCC = 5V ±10%, unless otherwise specified.
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Limits |
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Symbol |
Parameter |
Min. |
Typ. |
Max. |
Units |
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Test Conditions |
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ICC |
VCC Current (Operating, TTL) |
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30 |
mA |
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= |
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= VIL, f=6MHz |
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CE |
OE |
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All I/O’s Open |
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ICCC(5) |
VCC Current (Operating, CMOS) |
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25 |
mA |
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= |
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= VILC, f=6MHz |
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CE |
OE |
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All I/O’s Open |
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ISB |
VCC Current (Standby, TTL) |
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1 |
mA |
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= VIH, All I/O’s Open |
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CE |
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ISBC(6) |
VCC Current (Standby, CMOS) |
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150 |
μA |
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= VIHC, |
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CE |
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All I/O’s Open |
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ILI |
Input Leakage Current |
–10 |
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10 |
μA |
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VIN = GND to VCC |
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ILO |
Output Leakage Current |
–10 |
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10 |
μA |
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VOUT = GND to VCC, |
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CE |
= VIH |
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VIH(6) |
High Level Input Voltage |
2 |
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VCC +0.3 |
V |
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VIL(5) |
Low Level Input Voltage |
–0.3 |
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0.8 |
V |
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VOH |
High Level Output Voltage |
2.4 |
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V |
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IOH = –400μA |
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VOL |
Low Level Output Voltage |
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0.4 |
V |
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IOL = 2.1mA |
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VWI |
Write Inhibit Voltage |
3.5 |
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V |
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Note:
(1)This parameter is tested initially and after a design or process change that affects the parameter.
(2)The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.
(3)Output shorted for no more than one second. No more than one output shorted at a time.
(4)Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to VCC +1V.
(5)VILC = –0.3V to +0.3V.
(6)VIHC = VCC –0.3V to VCC +0.3V.
3 |
Doc. No. 25073-00 2/98 |
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