Sony CXK581000AP-70LL, CXK581000AP-55SL, CXK581000AP-55LL, CXK581000AP-10SL, CXK581000AP-10LL Datasheet

CXK581000ATM/AYM/AM/AP --55LL/70LL/10LL55SL/70SL/10SL

131072-word × 8-bit High Speed CMOS Static RAM

For the availability of this product, please contact the sales office.

Description

The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by

8bits.

A polysilicon TFT cell technology realized extremely low

standby current and higher data retention stability. Special feature are low power consumption, high

speed and broad package line-up.

The CXK581000ATM/AYM/AM/AP ia a suitable RAM for portable equipment with battery back up.

Features
• Fast access time:
CXK581000ATM/AYM/AM/AP	(Access time)
-55LL/55SL	55ns (Max.)
-70LL/70SL	70ns (Max.)
-10LL/10SL	100ns (Max.)
• Low standby current:
CXK581000ATM/AYM/AM/AP
-55LL/70LL/10LL	20µA (Max.)
-55SL/70SL/10SL	12µA (Max.)
• Low data retention current
CXK581000ATM/AYM/AM/AP
-55LL/70LL/10LL	12µA (Max.)
-55SL/70SL/10SL	4µA (Max.)

•Single +5V supply: +5V ±10%

•Low voltage data retention: 2.0V (Min.)

•Broad package line-up

•CXK581000ATM/AYM

8mm × 20mm 32 pin TSOP package

• CXK581000AM	525mil	32 pin SOP package
• CXK581000AP	600mil	32 pin DIP package

Functions

131072-word × 8-bit static RAM

Structure

Silicon gate CMOS IC

CXK581000ATM			CXK581000AYM
32 pin TSOP (Plastic)			32 pin TSOP (Plastic)

CXK581000AM

CXK581000AP

32 pin SOP (Plastic)

32 pin DIP (Plastic)

Block Diagram

	A10
	A11
	A9				VCC
	A8
				Memory
	A13	Buffer	Row
				Matrix
	A15		Decoder
				1024	× 1024
	A16
					GND
	A14
	A12
	A7
	A6
	A5
	A4	Buffer		I/O Gate
	A3			Column
	A2			Decoder
	A1
	A0
	OE
		Buffer
	WE			I/O Buffer
	CE1
	CE2			I/O 1	I/O 8

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

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E92756D53-PP

CXK581000ATM/AYM/AM/AP

Pin Configuration (Top View)

A11
	1
A9	2
A8	3
A13	4
WE	5
CE2	6
A15	7	CXK581000ATM
VCC
	8
NC
	9	(Standard Pinout)
A16	10
A14	11
A12	12
A7	13
A6	14
A5	15
A4	16
A4
	16
A5
	15
A6
	14
A7
	13
A12
	12
A14
	11
A16
	10	CXK581000AYM
NC
	9
VCC		(Mirror Image Pinout)
	8
A15
	7
CE2
	6
WE
	5
A13
	4
A8
	3
A9
	2
A11
	1

	OE
32
		NC		1		32	VCC
31	A10	A16					A15
30	CE1			2		31
29	I/O8	A14				30	CE2
				3
	I/O7
28		A12		4		29	WE
27	I/O6	A7		5		28	A13
26	I/O5	A6					A8
				6		27
25	I/O4	A5					A9
24	GND			7	26
23	I/O3	A4		8		25	A11
22	I/O2	A3		9		24	OE
21	I/O1	A2		10		23	A10
20	A0
		A1		11	22		CE1
19	A1	A0					I/O8
	A2			12		21
18		I/O1					I/O7
17	A3			13		20
		I/O2		14		19	I/O6
		I/O3					I/O5
				15		18
	A3
17		GND		16		17	I/O4

18A2

19A1

20A0

21	I/O1	CXK581000AM
	I/O2
22		CXK581000AP
	I/O3
23

24GND

25I/O4

26I/O5

27I/O6

28I/O7

29I/O8

30CE1

31A10

32OE

Pin Description

		Symbol				Description
	A0 to A16					Address input
	I/O1 to I/O8					Data input output
					CE2	Chip enable 1, 2 input
	CE1,
						Write enable input
		WE
						Output enable input
	OE
	Vcc					Power supply
	GND					Ground
	NC					No connection

Absolute Maximum Ratings				(Ta = 25°C, GND = 0V)
	Item		Symbol	Rating	Unit
	Supply voltage	VCC		–0.5 to +7.0
	Input voltage	VIN		–0.5 to VCC +0.5	V
	Input and output voltage	VI/O		–0.5 to VCC +0.5
	Allowable power dissipation	PD	CXK581000AP	1.0	W
			CXK581000ATM/AYM/AM	0.7
	Operating temperature	Topr		0 to +70	°C
	Storage temperature	Tstg		–55 to +150
	Soldering temperature	Tsolder	CXK581000AP	260 • 10	°C • s
				235 • 10
			CXK581000ATM/AYM/AM

VIN,VI/O = –3.0V Min. for pulse width less than 50ns.

Truth Table

CE1

CE2

OE

WE

Mode

I/O pin

VCC Current

H

×

×

×

Not selected

High Z

ISB1, ISB2

×

L

×

×

Not selected

High Z

ISB1, ISB2

L

H

H

H

Output disable

High Z

ICC1, ICC2, ICC3

L

H

L

H

Read

Data out

ICC1, ICC2, ICC3

L

H

×

L

Write

Data in

ICC1, ICC2, ICC3

×: "H" or "L"

DC Recommended Operating Conditions

(Ta = 0 to +70°C, GND = 0V)

Item

Symbol

Min.

Typ.

Max.

Unit

Supply voltage

VCC

4.5

5.0

5.5

Input high voltage

VIH

2.2

—

VCC +0.3

V

Input low voltage

VIL

–0.3

—

0.8

VIL = –3.0V Min. for pulse width

less than 50ns.

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CXK581000ATM/AYM/AM/AP

Electrical Characteristics

• DC Characteristics

(VCC = 5V ±10%, GND = 0V, Ta = 0 to = +70°C)

Item

Symbol

Test conditions

Min.

Typ. 1

Max.

Unit

Input leakage current

ILI

VIN = GND to VCC

–1

—

1

µA

= VIH or CE2 = VIL or

= VIH

Output leakage current

ILO

CE1

OE

–1

—

1

or WE = VIL, VI/O = GND to VCC

Operating power

ICC1

CE1 = VIL, CE2 = VIH

—

7

15

supply current

VIN = VIH or VIL

IOUT = 0mA

Min. cycle

55LL/55SL

—

45

90

ICC2

Duty = 100%

70LL/70SL

—

40

70

IOUT = 0mA

10LL/10SL

—

35

60

mA

Average operating

Cycle time 1µs

duty = 100%

current

IOUT = 0mA

ICC3

CE1

≤ 0.2V

—

10

20

CE2 ≥ VCC – 0.2V

VIL ≤ 0.2V

VIH ≥ VCC – 0.2V

0 to +70°C

—

—

20

LL 2

CE2 ≤ 0.2V

0 to +40°C

—

—

4

+25°C

—

0.7

2

µA

ISB1

or CE1 ≥ VCC – 0.2V

Standby current

0 to +70°C

—

—

12

{CE2 ≥ VCC – 0.2V

SL 3

0 to +40°C

—

—

2.4

+25°C

—

0.3

1

ISB2

—

0.6

3

mA

CE1

= VIH or CE2 = VIL

Output high

VOH

IOH = –1.0mA

2.4

—

—

voltage

V

Output low

VOL

IOL = 2.1mA

—

—

0.4

voltage

1 VCC = 5V, Ta = 25°C

2 For -55LL/70LL/10LL

3 For -55SL/70SL/10SL

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CXK581000ATM/AYM/AM/AP

I/O Capacitance					(Ta = 25°C, f = 1MHz)
Item		Symbol	Test conditions	Min.	Typ.	Max.	Unit
Input capacitance		CIN	VIN = 0V	—	—	7	pF
I/O capacitance		CI/O	VI/O = 0V	—	—	8
Note) This parameter is sampled and is not 100% tested.
AC Characteristics
• AC test conditions			(VCC = 5V±10%, Ta = 0 to +70°C)

Item		Conditions
Input pulse high level		VIH = 2.2V
Input pulse low level		VIL = 0.8V
input rise time		tr = 5ns
input fall time		tf = 5ns
Input and output reference level		1.5V
	-55LL/55SL	CL = 30pF, 1TTL
Output load conditions	-70LL/70SL	CL = 100pF, 1TTL
	-10LL/10SL
CL includes scope and jig capacitances.

• Test circuit

TTL

CL

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