Sony CXK58512TM, CXK58512M-70LL, CXK58512M-55LL, CXK58512M-10LL Datasheet

CXK58512TM/M

-55LL/70LL/10LL

65536-word × 8-bit High Speed CMOS Static RAM

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Description

The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits.

A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.

Special feature are low power consumption, high speed.

The CXK58512TM/M is a suitable RAM for portable equipment with battery back up.

Features
• Fast access time	(Access time)
-55LL	55ns (Max.)
-70LL	70ns (Max.)
-10LL	100ns (Max.)
• Low standby current	10µA (Max.)
• Low data retention current	6µA (Max.)

•Single +5V supply: +5V ± 10%

•Low voltage data retention: 2.0V (Min.)

•Broad package line-up

CXK58512TM	8mm × 20mm 32 pin TSOP package
CXK58512M	525mil 32 pin SOP Package

Function

65536-word × 8 bit static RAM

Structure

Silicon gate CMOS IC

CXK58512TM CXK58512M

32 pin TSOP (Plastic)			32 pin SOP (Plastic)

Block Diagram

A15
A13
A8				VCC
A11		Row	Memory
A9
	Buffer		Matrix
A7		Decoder
A6			1024 × 512	GND
A5
A14
A12
A4
A3			I/O Gate
A10	Buffer
			Column
A0
			Decoder
A2
A1
OE	Buffer
WE			I/O Buffer
CE1
CE2			I/O1 I/O8

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

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E94915A58-PK

CXK58512TM/M

Pin Configuration (Top View)

Pin Description

OE

Symbol

Description

A11

1

32

A9

2

31

A10

NC

1

32

Vcc

A8

3

30

CE1

NC

2

31

A15

A0 to A15

Address input

A13

I/O8

4

29

A14

CE2

WE

I/O7

3

30

5

28

A12

WE

CE2

I/O6

6

27

4

29

I/O1 to I/O8

Data input output

A15

I/O5

A7

A13

7

26

5

28

Vcc

I/O4

8

CXK58512TM

25

A6

A8

NC

GN

A5

6

27

A9

CE1, CE2

Chip enable 1, 2 input

NC

10

23

I/O3

7

26

9

24

D

A14

I/O2

A4

A11

11

22

A12

8

25

WE

Write enable input

I/O1

A3

OE

12

21

A7

13

20

A0

A2

9

24

A10

A6

A1

OE

Output enable input

A5

14

19

A2

A1

1

23

CE1

0

A4

15

18

A3

A0

1

22

I/O8

16

17

1

VCC

Power supply

I/O1

12

21

I/O7

I/O2

I/O6

1

20

I/O3

3

I/O5

GND

Ground

1

19

GND

4

I/O4

15

18

NC

No connection

16

17

CXK58512M

Absolute Maximum Ratings

(Ta = 25°C, GND = 0V)

Item

Symbol

Rating

Unit

Supply voltage

VCC

–0.5 to +7.0

V

Input voltage

VIN

–0.5 to VCC + 0.5

V

Input and output voltage

VI/O

–0.5 to VCC + 0.5

V

Allowable power dissipation

PD

0.7

W

Operating temperature

Topr

0 to +70

°C

Storage temperature

Tstg

–55 to +150

°C

Soldering temperature • time

Tsolder

235 • 10

°C • s

VIN, VI/O = –3.0V Min. for pulse width less than 50ns.

Truth Table

CE1

CE2

OE

WE

Mode

I/O pin

VCC Current

H

×

×

×

Not selected

High Z

ISB1, ISB2

×

L

×

×

Not selected

High Z

ISB1, ISB2

L

H

H

H

Output disable

High Z

ICC1, ICC2, ICC3

L

H

L

H

Read

Data out

ICC1, ICC2, ICC3

L

H

×

L

Write

Data in

ICC1, ICC2, ICC3

×: "H" or "L"

DC Recommended Operating Conditions

(Ta = 0 to +70°C, GND = 0V)

Item

Symbol

Min.

Typ.

Max.

Unit

Supply voltage

VCC

4.5

5.0

5.5

V

Input high voltage

VIH

2.2

—

VCC + 0.3

V

Input low voltage

VIL

–0.3

—

0.8

V

VIL = –3.0V Min. for pulse width less than 50ns.

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CXK58512TM/M

Electrical Characteristics

• DC Characteristics

(VCC = 5V ± 10%, GND = 0V, Ta = 0 to +70°C)

Item

Symbol

Test conditions

Min.

Typ.

Max.

Unit

Input leakage current

ILI

VIN = GND to VCC

–1

—

+1

µA

= VIH or CE2 = VIL or

Output leakage current

ILO

CE1

OE = VIH or WE = VIL

–1

—

+1

µA

VI/O = GND to VCC

= VIL, CE2 = VIH

Operating power supply

ICC1

CE1

VIN = VIH or VIL

—

7

15

mA

current

IOUT = 0mA

Min. cycle

-55LL

—

45

90

ICC2

duty = 100%

-70LL

—

40

70

mA

IOUT = 0mA

-10LL

—

35

60

Average operating current

Cycle time 1µs

duty = 100%

IOUT = 0mA

—

10

20

mA

ICC3

CE1

≤ 0.2V

CE2 ≥ Vcc – 0.2V

VIL ≤ 0.2V

VIH ≥ Vcc – 0.2V

CE2 0.2V

0 to +70°C

—

—

10

ISB1

≥ Vcc – 0.2V

0 to +40°C

—

—

2

µA

CE1

Standby current

oroCE2 ≥ Vcc – 0.2V

+25°C

—

0.4

1

ISB2

0.6

3

mA

CE1

= VIH or CE2 = VIL

—

Output high voltage

VOH

IOH = –1.0mA

2.4

—

—

V

Output low voltage

VOL

IOL = 2.1mA

—

—

0.4

V

VCC = 5V, Ta = 25°C

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CXK58512TM/M

I/O capacitance				(Ta = 25°C, f = 1MHz)
Item	Symbol	Test conditons	Min.	Typ.	Max.	Unit
Input capacitance	CIN	VIN = 0V	—	—	7	pF
I/O capacitance	CI/O	VI/O = 0V	—	—	8	pF

Note) This parameter is sampled and is not 100% tested.

	AC Characteristics
	• AC test conditions	(VCC = 5V ± 10%, Ta = 0 to +70°C)
	Item		Conditions
	Input pulse high level		VIH = 2.2V
	Input pulse low level		VIL = 0.8V
	Input rise time		tr = 5ns
	Input fall time		tf = 5ns
	Input and output reference level		1.5V
	Output load conditions	-55LL	CL = 30pF, 1TTL
		-70LL/10LL	CL = 100pF, 1TTL

CL includes scope and jig capacitances.

• Test circuit

TTL

CL

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