Sony CXK5T8257BYM, CXK5T8257BTM, CXK5T8257BM-12LLX, CXK5T8257BM-10LLX Datasheet

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Sony CXK5T8257BYM, CXK5T8257BTM, CXK5T8257BM-12LLX, CXK5T8257BM-10LLX Datasheet

CXK5T8257BTM/BYM/BM -10LLX/12LLX

32768-word × 8-bit High Speed CMOS Static RAM Preliminary

For the availability of this product, please contact the sales office.

Description

The CXK5T8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits.

Special feature are low power consumption and high speed.

The CXK5T8257BTM/BYM/BM is a suitable RAM for portable equipment with battery back up.

Features

Extended operating temperature range: –25 to +85°C

Wide supply voltage range operation: 2.7 to 3.6V

Fast access time:

 

(Access time)

3.0V operation

-10LLX

100ns (Max.)

 

-12LLX

120ns (Max.)

3.3V operation

-10LLX

85ns (Max.)

 

-12LLX

100ns (Max.)

Low standby current: 7.0µA (Max.)

Low power data retention: 2.0V (Min.)

Available in many packages

CXK5T8257BTM/BYM

8mm × 13.4mm 28 pin TSOP Package

CXK5T8257BM

450mil 28 pin SOP Package

Function

32768-word × 8 bit static RAM

Structure

Silicon gate CMOS IC

CXK5T8257BTM

CXK5T8257BYM

28 pin TSOP (Plastic)

28 pin TSOP (Plastic)

CXK5T8257BM

28 pin SOP (Plastic)

Block Diagram

A14

 

 

 

 

A13

 

 

 

 

A12

 

 

 

VCC

A11

 

 

Memory

 

Row

 

A9

Buffer

Matrix

 

Decoder

 

A8

 

 

512 × 512

GND

A7

 

 

 

 

 

 

A6

 

 

 

 

A5

 

 

 

 

A10

 

 

 

 

A4

 

 

I/O Gate

 

A3

Buffer

 

 

 

Column

 

A2

 

 

 

 

Decoder

 

A1

 

 

 

 

A0

 

 

 

 

OE

Buffer

WE

I/O Buffer

CE I/O1 I/O8

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

PE96509-ST

 

 

 

 

 

 

 

 

 

 

 

 

 

CXK5T8257BTM/BYM/BM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Configuration (Top View)

 

 

 

 

 

 

 

Pin Description

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OE

 

 

 

A10

 

 

 

 

 

 

Symbol

Description

22

 

21

A14

 

 

 

VCC

A11

23

 

20

CE

1

 

28

A0 to A14

Address input

A9

 

 

 

I/O8

 

 

 

 

 

24

 

19

A12

 

 

 

WE

A8

25

 

18

I/O7

2

 

27

 

A7

 

 

 

A13

A13

26

 

17

I/O6

3

 

26

I/O1 to I/O8

Data input/output

WE

 

 

 

I/O5

 

 

 

 

 

27

 

16

A6

 

 

 

A8

 

CXK5T8257BTM

 

I/O4

4

 

25

 

 

 

VCC

28

15

A5

 

 

 

A9

 

 

 

 

 

 

 

 

 

 

 

A14

1

(Standard Pinout)

14

GND

5

 

24

CE

Chip enable input

 

 

I/O3

 

 

 

 

 

A12

2

 

13

A4

 

 

 

A11

 

 

 

 

6

 

23

A7

3

 

12

I/O2

A3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A6

4

 

11

I/O1

7

 

22

OE

 

 

 

 

 

 

WE

Write enable input

 

 

 

 

 

 

A5

 

 

 

A0

 

 

 

 

 

5

 

10

A2

 

 

 

A10

 

 

 

A1

8

 

21

 

 

 

 

A4

6

 

9

A1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A3

 

 

 

A2

9

 

20

CE

OE

Output enable input

7

 

8

A0

 

 

 

I/O8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

19

 

 

 

 

 

 

 

 

 

I/O1

 

 

 

I/O7

VCC

Power supply

A3

7

 

8

A2

11

 

18

 

 

 

 

 

 

 

 

 

A1

 

 

 

 

 

A4

6

 

9

I/O2

12

 

17

I/O6

 

 

 

 

 

 

 

 

 

 

 

 

A5

5

 

10

A0

I/O3

 

 

 

I/O5

GND

Ground

A6

4

 

11

I/O1

13

 

16

 

 

 

 

 

 

A7

 

 

 

I/O2

GND

 

 

 

I/O4

 

 

 

 

3

 

12

14

 

15

 

 

 

 

A12

 

 

 

I/O3

 

 

 

 

 

 

 

 

 

2

CXK5T8257BYM

13

 

 

 

 

 

 

 

 

 

A14

 

 

GND

 

 

 

 

 

 

 

 

 

1

14

 

 

CXK5T8257BM

 

 

 

 

 

 

 

I/O4

 

 

 

 

 

 

 

VCC

28

(Standard Pinout)

15

 

 

 

 

 

 

 

 

 

I/O5

 

 

 

 

 

 

 

 

 

WE

27

 

16

 

 

 

 

 

 

 

 

 

A13

 

 

 

I/O6

 

 

 

 

 

 

 

 

 

26

 

17

 

 

 

 

 

 

 

 

 

A8

 

 

 

I/O7

 

 

 

 

 

 

 

 

 

25

 

18

 

 

 

 

 

 

 

 

 

A9

 

 

 

I/O8

 

 

 

 

 

 

 

 

 

24

 

19

 

 

 

 

 

 

 

 

 

A11

 

 

 

CE

 

 

 

 

 

 

 

 

 

23

 

20

 

 

 

 

 

 

 

 

 

OE

 

 

 

A10

 

 

 

 

 

 

 

 

 

22

 

21

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Absolute Maximum Ratings

 

(Ta = 25°C, GND = 0V)

 

 

 

 

Item

Symbol

Rating

Unit

 

 

 

 

Supply voltage

VCC

–0.5 to +4.6

V

 

 

 

 

Input voltage

VIN

–0.5 1 to VCC + 0.5

V

Input and output voltage

VI/O

–0.5 1 to VCC + 0.5

V

Allowable power dissipation

PD

0.7

W

 

 

 

 

Operating temperature

Topr

–25 to +85

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

 

 

 

 

Soldering temperature · time

Tsolder

235 · 10

°C · s

 

 

 

 

1 VIN, VI/O = –3.0V Min. for pulse width less than 50ns.

Truth Table

 

 

 

 

 

 

 

 

 

 

 

 

CE

OE

 

WE

Mode

I/O1 to I/O8

VCC Current

 

 

 

 

 

 

 

 

 

 

 

 

 

H

×

 

×

 

Not selected

High Z

ISB1, ISB2

 

 

 

 

 

 

 

 

 

 

 

 

 

L

 

H

 

H

Output disable

High Z

ICC1, ICC2

 

 

 

 

 

 

 

 

 

 

 

 

 

L

 

L

 

H

Read

Data out

ICC1, ICC2

 

 

 

 

 

 

 

 

 

 

 

 

 

L

×

 

 

L

Write

Data in

ICC1, ICC2

×: "H" or "L"

– 2 –

 

 

 

 

 

 

 

 

 

CXK5T8257BTM/BYM/BM

 

 

 

 

 

 

 

 

 

 

 

 

DC Recommended Operating Conditions

 

 

 

(Ta = –25 to +85°C, GND = 0V)

 

 

 

 

 

 

 

 

 

 

 

 

Item

Symbol

VCC = 2.7 to 3.6V

VCC = 3.3V ± 0.3V

Unit

 

 

 

 

 

 

 

 

 

 

 

 

Min.

Typ.

Max.

Min.

 

Typ.

 

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Supply voltage

VCC

2.7

3.3

3.6

3.0

 

3.3

 

3.6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input high voltage

VIH

2.4

VCC + 0.3

2.2

 

 

VCC + 0.3

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input low voltage

VIL

–0.3 1

0.4

–0.3 1

 

 

0.6

 

 

1 VIL=–3.0V Min. for pulse width less than 50ns.

 

Electrical Characteristics

 

 

 

 

 

 

 

 

 

 

 

 

 

• DC characteristics

 

 

 

 

 

 

(VCC = 2.7 to 3.6V, GND = 0V, Ta = –25 to +85°C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Item

Symbol

 

 

 

 

 

Test Conditions

Min.

Typ. 2

Max.

Unit

 

 

Input leakage current

ILI

 

VIN = GND to VCC

 

–0.5

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

= VIH

 

 

 

 

 

 

 

 

 

Output leakage

ILO

 

CE

 

 

–0.5

0.5

µA

 

 

 

OE = VIH or WE = VIL

 

 

 

current

 

 

 

 

 

 

 

VI/O = GND to VCC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Operating power

 

 

CE

= VIL

 

 

 

 

 

 

 

ICC1

 

VIN = VIH or VIL

 

0.9

2

 

 

 

supply current

 

 

 

 

 

 

 

IOUT = 0mA

 

 

 

 

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Average operating

ICC2

 

Min. cycle

10LLX

18 3

35 4

 

 

 

current

 

duty = 100%, IOUT = 0mA

12LLX

18

35

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

–25 to +85°C

7.0

 

 

 

 

ISB1

 

 

VCC – 0.2V

 

 

 

 

 

 

 

 

 

 

–25 to +70°C

 

 

 

 

 

Standby current

 

CE

3.5

µA

 

 

 

 

 

 

 

 

 

+25°C

0.12

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISB2

 

 

 

0.06

0.7

 

 

 

 

 

CE

= VIH

 

mA

 

 

Output high

VOH

 

IOH = –2mA

 

2.4

 

 

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

 

 

Output low

VOL

 

IOL = 2.0mA

 

0.4

 

 

 

 

 

 

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2 VCC = 3.3V, Ta = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

3 ICC2 = 21mA for 3.3V operation (VCC = 3.3V ± 0.3V)

 

 

 

 

 

 

4 ICC3 = 40mA for 3.3V operation (VCC = 3.3V ± 0.3V)

 

 

 

 

 

 

– 3 –

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