CXK5T8257BTM/BYM/BM -10LLX/12LLX
32768-word × 8-bit High Speed CMOS Static RAM Preliminary
For the availability of this product, please contact the sales office.
Description
The CXK5T8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits.
Special feature are low power consumption and high speed.
The CXK5T8257BTM/BYM/BM is a suitable RAM for portable equipment with battery back up.
Features
•Extended operating temperature range: –25 to +85°C
•Wide supply voltage range operation: 2.7 to 3.6V
• Fast access time: |
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(Access time) |
3.0V operation |
-10LLX |
100ns (Max.) |
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-12LLX |
120ns (Max.) |
3.3V operation |
-10LLX |
85ns (Max.) |
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-12LLX |
100ns (Max.) |
•Low standby current: 7.0µA (Max.)
•Low power data retention: 2.0V (Min.)
•Available in many packages
CXK5T8257BTM/BYM
8mm × 13.4mm 28 pin TSOP Package
CXK5T8257BM
450mil 28 pin SOP Package
Function
32768-word × 8 bit static RAM
Structure
Silicon gate CMOS IC
CXK5T8257BTM |
CXK5T8257BYM |
28 pin TSOP (Plastic) |
28 pin TSOP (Plastic) |
CXK5T8257BM |
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28 pin SOP (Plastic) |
Block Diagram
A14 |
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A13 |
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A12 |
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VCC |
A11 |
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Memory |
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Row |
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A9 |
Buffer |
Matrix |
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Decoder |
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A8 |
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512 × 512 |
GND |
A7 |
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A6 |
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A5 |
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A10 |
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A4 |
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I/O Gate |
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A3 |
Buffer |
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Column |
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A2 |
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Decoder |
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A1 |
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A0 |
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OE
Buffer
WE
I/O Buffer
CE I/O1 I/O8
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
– 1 –
PE96509-ST
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CXK5T8257BTM/BYM/BM |
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Pin Configuration (Top View) |
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Pin Description |
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OE |
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A10 |
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Symbol |
Description |
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22 |
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21 |
A14 |
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VCC |
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A11 |
23 |
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20 |
CE |
1 |
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28 |
A0 to A14 |
Address input |
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A9 |
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I/O8 |
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24 |
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19 |
A12 |
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WE |
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A8 |
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18 |
I/O7 |
2 |
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27 |
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A7 |
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A13 |
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A13 |
26 |
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17 |
I/O6 |
3 |
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26 |
I/O1 to I/O8 |
Data input/output |
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WE |
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I/O5 |
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27 |
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A6 |
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A8 |
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CXK5T8257BTM |
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I/O4 |
4 |
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25 |
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VCC |
28 |
15 |
A5 |
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A9 |
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A14 |
1 |
(Standard Pinout) |
14 |
GND |
5 |
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24 |
CE |
Chip enable input |
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I/O3 |
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A12 |
2 |
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13 |
A4 |
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A11 |
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6 |
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A7 |
3 |
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12 |
I/O2 |
A3 |
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A6 |
4 |
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11 |
I/O1 |
7 |
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22 |
OE |
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WE |
Write enable input |
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A5 |
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A0 |
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5 |
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10 |
A2 |
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A10 |
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A1 |
8 |
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21 |
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A4 |
6 |
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9 |
A1 |
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A3 |
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A2 |
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20 |
CE |
OE |
Output enable input |
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7 |
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8 |
A0 |
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I/O8 |
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19 |
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I/O1 |
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I/O7 |
VCC |
Power supply |
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A3 |
7 |
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A2 |
11 |
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18 |
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A1 |
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A4 |
6 |
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9 |
I/O2 |
12 |
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17 |
I/O6 |
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A5 |
5 |
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10 |
A0 |
I/O3 |
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I/O5 |
GND |
Ground |
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A6 |
4 |
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11 |
I/O1 |
13 |
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16 |
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A7 |
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I/O2 |
GND |
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I/O4 |
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3 |
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12 |
14 |
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15 |
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A12 |
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I/O3 |
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2 |
CXK5T8257BYM |
13 |
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A14 |
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GND |
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1 |
14 |
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CXK5T8257BM |
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I/O4 |
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VCC |
28 |
(Standard Pinout) |
15 |
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I/O5 |
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WE |
27 |
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16 |
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A13 |
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I/O6 |
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26 |
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17 |
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A8 |
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I/O7 |
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25 |
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18 |
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A9 |
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I/O8 |
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24 |
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19 |
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A11 |
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CE |
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23 |
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20 |
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OE |
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A10 |
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22 |
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21 |
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Absolute Maximum Ratings |
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(Ta = 25°C, GND = 0V) |
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Item |
Symbol |
Rating |
Unit |
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Supply voltage |
VCC |
–0.5 to +4.6 |
V |
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Input voltage |
VIN |
–0.5 1 to VCC + 0.5 |
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Input and output voltage |
VI/O |
–0.5 1 to VCC + 0.5 |
V |
Allowable power dissipation |
PD |
0.7 |
W |
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Operating temperature |
Topr |
–25 to +85 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
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Soldering temperature · time |
Tsolder |
235 · 10 |
°C · s |
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1 VIN, VI/O = –3.0V Min. for pulse width less than 50ns.
Truth Table
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CE |
OE |
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WE |
Mode |
I/O1 to I/O8 |
VCC Current |
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H |
× |
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× |
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Not selected |
High Z |
ISB1, ISB2 |
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L |
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H |
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H |
Output disable |
High Z |
ICC1, ICC2 |
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L |
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L |
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H |
Read |
Data out |
ICC1, ICC2 |
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L |
× |
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L |
Write |
Data in |
ICC1, ICC2 |
×: "H" or "L"
– 2 –
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CXK5T8257BTM/BYM/BM |
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DC Recommended Operating Conditions |
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(Ta = –25 to +85°C, GND = 0V) |
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Item |
Symbol |
VCC = 2.7 to 3.6V |
VCC = 3.3V ± 0.3V |
Unit |
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Min. |
Typ. |
Max. |
Min. |
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Typ. |
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Max. |
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Supply voltage |
VCC |
2.7 |
3.3 |
3.6 |
3.0 |
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3.3 |
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3.6 |
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Input high voltage |
VIH |
2.4 |
— |
VCC + 0.3 |
2.2 |
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— |
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VCC + 0.3 |
V |
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Input low voltage |
VIL |
–0.3 1 |
— |
0.4 |
–0.3 1 |
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— |
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0.6 |
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1 VIL=–3.0V Min. for pulse width less than 50ns.
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Electrical Characteristics |
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• DC characteristics |
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(VCC = 2.7 to 3.6V, GND = 0V, Ta = –25 to +85°C) |
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Item |
Symbol |
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Test Conditions |
Min. |
Typ. 2 |
Max. |
Unit |
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Input leakage current |
ILI |
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VIN = GND to VCC |
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–0.5 |
— |
0.5 |
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= VIH |
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Output leakage |
ILO |
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CE |
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–0.5 |
— |
0.5 |
µA |
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OE = VIH or WE = VIL |
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current |
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VI/O = GND to VCC |
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Operating power |
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CE |
= VIL |
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ICC1 |
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VIN = VIH or VIL |
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— |
0.9 |
2 |
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supply current |
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IOUT = 0mA |
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mA |
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Average operating |
ICC2 |
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Min. cycle |
10LLX |
— |
18 3 |
35 4 |
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current |
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duty = 100%, IOUT = 0mA |
12LLX |
— |
18 |
35 |
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–25 to +85°C |
— |
— |
7.0 |
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ISB1 |
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≥ VCC – 0.2V |
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–25 to +70°C |
— |
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Standby current |
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CE |
— |
3.5 |
µA |
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+25°C |
— |
0.12 |
— |
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ISB2 |
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— |
0.06 |
0.7 |
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CE |
= VIH |
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mA |
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Output high |
VOH |
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IOH = –2mA |
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2.4 |
— |
— |
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voltage |
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V |
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Output low |
VOL |
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IOL = 2.0mA |
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— |
— |
0.4 |
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voltage |
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2 VCC = 3.3V, Ta = 25°C |
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3 ICC2 = 21mA for 3.3V operation (VCC = 3.3V ± 0.3V) |
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4 ICC3 = 40mA for 3.3V operation (VCC = 3.3V ± 0.3V) |
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– 3 –