Sharp PT381, PT381F, PT380, PT380F Datasheet

PT380/PT380F/PT381/PT381F

PT380/PT380F

PT381/PT381F

■Features

1.High sensitivity

( IC : MIN.160	μ A at E V = 100lx, PT380 )
( IC : MIN.120	μ A at E V = 2lx, PT381 )

2.Compact φ 3mm resin mold package

3.Intermediate acceptance ( Δθ : TYP. ± 20˚ )

4.Visible light cut-off type : PT380F / PT381F

■ Model Line-ups

	Single photo-	Darlington photo-
	transistor output	transistor output
No visible	PT380	PT381
light cut-off
filter
Built-in	PT380F	PT381F
visible light
cut-off filter

■Applications

1.Floppy disk drives

2.Optoelectronic switches

3.Infrared applied systems

High Sensitivity, φ 3mm Resin Mold Type

Phototransistor

	■ Outline Dimensions						(Unit : mm )
	φ 3.8± 0.2				Epoxy resin
	φ 3.0± 0.15
	Mark (red)					PT380		PT381
	(PT381F)
					0.2	PT380F		PT381F
			0.6
						2		2
					±
					5.3
	MAX.
	0.8				± 1
						1		1
					14.2
	2 - 0.5 +- 0.10.15
	(2.54)				0.5MIN.	1	Emitter
						2	Collector
	1.7					Epoxy resin
			0.15	0.1	PT380	Transparent resin
	1	2	+	-	PT381	Light blue transparent resin
			- 0.5
					PT380F /	Visible light
			2
						Cut-off resin
					PT381F
						(black)

■ Absolute Maximum Ratings				(Ta = 25˚C )
Parameter		Symbol	Rating		Unit
Collector-emitter voltage		V CEO	35		V
Emitter-collector voltage		V ECO	6		V
Collector current		IC	20		mA
Collector power dissipation		P C	50		mW
Operating temperature		T opr	- 25 to + 85		˚C
Storage temperature		T stg	- 40 to + 85		˚C
*1 Soldering temperature		T sol	260		˚C

*1 For 3 seconds at the position of 1.4mm from the bottom face of resin package

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device”.

PT380/PT380F/PT381/PT381F

	■ Electro-optical Characteristics						(Ta = 25˚C )
	Parameter		Symbol	Conditions	MIN.	TYP. MAX. Unit
		PT380		EV = 100lX	0.16	-	1.17
	*2Collector	PT380F	IC	V CE = 5V	0.095	-	0.90	mA
	current	PT381		EV = 2lX	0.12	-	1.5
		PT381F		V CE = 10V	0.07	-	1.08
	Collector dark	PT380 / PT380F	ICEO	Ee = 0, VCE = 20V	-	-	0.1	μA
	current	PT381 / PT381F		Ee = 0, VCE = 10V	-	-	1.0
	*2Collector-emitter	PT380 / PT380F	V CE( sat )	Ee = 10mW/cm 2, I C = 0.5mA	-	0.2	0.4	V
	saturation voltage	PT381 / PT381F		Ee = 1mW/cm 2, I C = 2.5mA	-	-	1.0
	Collector-emitter breakdown		BV CEO	IC = 0.1mA	35	-	-	V
	voltage			Ee = 0
	Emitter-Collector breakdown		BV ECO	IC = 0.01mA	6	-	-	V
	voltage			Ee = 0
	Peak sensitivity	PT380 / PT381	λ P	-	-	800	-	nm
	wavelength	PT380F / PT381F			-	860	-
	Rise time	PT380 / PT380F	t r	VCE = 20V, I C= 1mA, R L = 1k Ω	-	10	40
		PT381 / PT381F		VCE = 2V, I C = 10mA, R L = 100Ω	-	100	400
	Response							μ s
	time	PT380 / PT380F		VCE = 20V, I C = 1mA, R L = 1k Ω	-	8	35
			tf
	Fall time	PT381 / PT381F		VCE = 2V, I C = 10mA, R L = 100Ω	-	100	400
	Half intensity angle		Δθ	-	-	± 20	-	˚
	*2 E V , E e : Illuminance, irradiance by CIE standard light source A			( tungsten lamp )

Fig. 1 Collector Power Dissipation vs. Ambient Temperature

	80
)	70
mW	60
(
C
P
dissipation	50
	40
power	30
Collector	20
	10
	0
	- 25	0	25	50	75	100
		Ambient temperature T a ( ˚C )

Fig. 2-a Collector Dark Current vs.

		Ambient Temperature
	10 -6		(PT380/PT380F )
	5	VCE = 20V
)	2
A	10 -7
(
CEO	5
I
current	2
	10 -8
dark	5
Collector	2
	10 -9
	5
	2
	10 - 10				100
	0	25	50	75
		Ambient temperature T a		( ˚C )