PT4800/PT4800F/PT4810/PT4810F/PT4850F
PT4800/PT4800F/PT4810
PT4810F/PT4850F
■ Features
1.Thin type package ( Thickness : 1.5mm )
2.Visible light cut-off type :
PT4800F/PT4810F/PT4850F
3. Single phototransistor output :
PT4800/PT4800F/PT4850F
Darlington phototransistor output:
PT4810/PT4810F
4.Thin type
■Applications
1.VCRs
2.Floppy disk drives
Thin Type Phototransistor
■ Outline Dimensions |
( Unit : mm) |
gate |
MAX |
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3.0 |
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1.5 |
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Restof |
: 0.3 |
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1.6 |
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PT4800/F |
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2 - C0.5 |
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0.8 |
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1.0 |
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PT4850F |
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dimensions |
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0.8 |
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3.5 |
Epoxy resin |
2 |
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φ 0.8 |
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1.7 |
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MAX |
2 - 0.45 |
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0.7 |
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2 - 0.9 |
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Burry's |
: 0.3 |
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0.8 |
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1.8 |
0.5 |
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1 |
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± |
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PT4810F |
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17.5 |
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PT4810/F |
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Mark(blue) |
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2 |
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MIN. |
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PT4850F |
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Mark(black) |
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0.5 |
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2.54 |
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2 - 0.25 |
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1 |
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2 |
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1 |
Emitter |
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1 |
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2 |
Collector |
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Epoxy resin |
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PT4800 |
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Transparent resin |
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PT4810 |
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Transparent blue resin |
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F type |
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Visible light cut-off resin (black ) |
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■ Absolute Maximum Ratings |
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( Ta = 25˚C) |
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Parameter |
Symbol |
Rating |
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Unit |
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Collector-emitter voltage |
V CEO |
35 |
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V |
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Emitter-collector voltage |
V ECO |
6 |
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V |
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Collector current |
PT4800/PT4800F/PT4850F |
IC |
20 |
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mA |
PT4810/PT4810F |
50 |
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Collector power dissipation |
P C |
75 |
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mW |
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Operating temperature |
T opr |
- 25 to + 85 |
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˚C |
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Storage temperature |
T stg |
- 40 to + 85 |
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˚C |
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*1Soldering temperature |
T sol |
260 |
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˚C |
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*1 For 3 seconds at the position of 1.8mm from the bottom face of resin package
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device”.
PT4800/PT4800F/PT4810/PT4810F/PT4850F
■ Electro-optical Characteristics |
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( Ta = 25˚C) |
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Parameter |
Symbol |
Conditions |
MIN. |
TYP. |
MAX. |
Unit |
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PT4800 |
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Ee = 1mW/cm2 |
0.12 |
0.4 |
1.0 |
mA |
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PT4800F |
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0.08 |
0.25 |
0.75 |
mA |
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VCE = 5V |
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*2Collector current |
PT4850F |
IC |
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0.12 |
- |
0.56 |
mA |
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PT4810 |
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Ee = 0.1mW/cm2 |
0.45 |
- |
7.0 |
mA |
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PT4810F |
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VCE = 2V |
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0.27 |
- |
6.0 |
mA |
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PT4800/PT4800F |
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Ee = 0, VCE |
= 20V |
- |
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0.1 |
m A |
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Collector dark current |
PT4850F |
ICEO |
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PT4810/PT4810F |
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Ee = 0, VCE |
= 10V |
- |
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1.0 |
m A |
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PT4800/PT4800F |
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Ee = 10mW/cm2 |
- |
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0.4 |
V |
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*2Collector-emitter saturation |
PT4850F |
V CE |
IC = 0.5mA |
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voltage |
PT4810/PT4810F |
(sat) |
Ee = 1mW/cm2 |
- |
- |
1.0 |
V |
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IC = 2.5mA |
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Collector-emitter breakdown voltage |
BV CEO |
IC = 0.1mA |
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35 |
- |
- |
V |
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Ee = 0 |
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Emitter-collector breakdown voltage |
BV ECO |
IE = 0.01mA |
6 |
- |
- |
V |
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Ee = 0 |
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PT4800 |
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- |
800 |
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nm |
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Peak sensitivity |
PT4800F |
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- |
860 |
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nm |
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PT4850F |
λ p |
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- |
- |
860 |
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nm |
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wavelength |
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PT4810 |
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- |
800 |
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nm |
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PT4810F |
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- |
860 |
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nm |
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PT4800/PT4800F |
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VCE = 2V, I C = 2mA |
- |
3.0 |
- |
μ s |
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PT4850F |
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RL = 100Ω |
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Rise time |
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t r |
VCE = 2V |
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μ s |
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PT4810/PT4810F |
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IC = 10mA |
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80 |
400 |
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Response |
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RL = 100Ω |
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time |
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PT4800/PT4800F |
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V CE = 2V, I C = 2mA |
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3.5 |
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μ s |
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PT4850F |
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RL = 100Ω |
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Fall time |
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tf |
V CE = 2V |
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μ s |
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PT4810/PT4810F |
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IC = 10mA |
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70 |
350 |
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RL = 100Ω |
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Half intensity angle |
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θ |
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- |
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± 35 |
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˚ |
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*2 E e : Irradiance by CIE standard light source A ( tungsten lamp)
Fig. 1 Collector Power Dissipation vs. Ambient Temperature
) |
100 |
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mW |
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( |
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C |
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P |
80 |
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power dissipation |
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60 |
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40 |
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Collector |
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20 |
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0 |
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- 25 |
0 |
25 |
50 |
75 85 |
100 |
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Ambient temperature T a (˚C) |
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Fig. 2-a Collector Dark Current vs.
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Ambient Temperature |
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10 - 6 |
(PT4800/PT4800F/PT4850F ) |
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5 |
VCE = 20V |
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) |
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A |
2 |
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( |
10 - 7 |
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CEO |
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5 |
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I |
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current |
2 |
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10 - 8 |
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dark |
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5 |
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Collector |
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2 |
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10 - 9 |
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5 |
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2 |
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10 - 10 |
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0 |
25 |
50 |
75 |
100 |
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Ambient temperature T a (˚C) |
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