Sharp PT481, PT481F, PT483F1 Datasheet

PT481/PT481F/PT483F1

PT481/PT481F/

PT483F1

■ Features

1. Epoxy resin package

2. Narrow acceptance ( θ : Typ. ± 13˚ ) 3. High sensitivity

( IC : MIN. 1.5mA at E e = 0.1mW/cm 2 ) :

PT481/PT483F1

( IC : MIN. 0.9mA at E e = 0.1mW/cm 2 ) :

PT481F

4.Visible light cut-off type : PT481F/PT483F1

5.Long lead pin type : PT483F1

■Applications

1.VCRs, cassette tape recorders

2.Floppy disk drives

3.Optoelectronic switches

4.Automatic stroboscopes

■ Absolute Maximum Ratings ( Ta = 25˚C)

Parameter	Symbol	Rating	Unit
Collector-emitter voltage	V CEO	35	V
Emitter-collector voltage	V ECO	6	V
Collector current	IC	50	mA
Collector power dissipation	P C	75	mW
Operating temperature	T opr	- 25 to +85	˚C
Storage temperature	T stg	- 40 to +85	˚C
*1Soldering temperature	T sol	260	˚C

*1 For 3 seconds at the position of 1.4mm from the bottom face of resin package

Narrow Acceptance High

Sensitivity Phototransistor

■ Outline Dimensions						( Unit : mm)
PT481/PT481F			Detector center			Epoxy
2 - C0.5 3.0		1.5		1.15		resin
			0.75

of	MAX.				R0.5
Rest gate	0.3			4.0
					0.15
R0.8± 0.1			MAX.	60˚		MAX.
Mark		1.7					1.4
(black)			0.8			0.8

PT481F			+1.5 -1.0
			17.5
	0.2	2.54	MIN.	2 - 0.4	2 - 0.45
0.2	±		0.5
	2.15				2 - 0.8
			1.6
±
2.95						2
		2.8		1	Emitter
	1		2
				2	Collector
			Epoxy resin			1
PT481		Light blue transparent resin
PT481F		Visible light cut-off resin ( black )

PT483F1
				Detector center						Epoxy
							1.15
2 - C0.5			3.0	1.5						resin
							0.75
	MAX.
of								R0.5
Rest gate	0.3					4.0
								0.15
R0.8± 0.1				MAX.	18.5		60˚		MAX.
Mark			1.7
(black)				0.8		40.0			0.8	1.4
	2 - 0.6			3.0
		± 0.2		MIN.					2 - 0.45
			2.54	0.5			2 - 0.4
									2 - 0.8
		2.15
	0.2			1.6
	±
	2.95									2
			2.8
		1		2

1Emitter

2Collector

1

Visible light cut-off resin ( black )

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

PT481/PT481F/PT483F1

■ Electro-optical Characteristics							( Ta = 25˚C)
Parameter			Symbol	Conditions	MIN.	TYP.	MAX.	Unit
*2 Collector	PT481			V CE = 2V	1.5	10	25	mA
	PT481F		IC		0.9	-	27	mA
current				Ee = 0.1mW/cm2
	PT483F1				1.5	-	4.0	mA
Collector dark current			ICEO	V CE = 10V, E e = 0	-	-	10- 6	A
*2 Collector-emitter saturation voltage			V CE( sat )	Ic = 2.5mA	-	0.7	1.0	V
				Ee = 1mW/cm2
Peak emission	PT481		λ p	-	-	800	-	nm
wavelength					-	860	-	nm
	PT481F/PT483F1
Response time	Rise time		t r	VCE = 2V, I C = 10mA	-	80	-	μ s
	Fall time		tf	RL = 100Ω	-	70	-	μ s
*2 E e : Irradiance by CIE standard light source A		( tungsten lamp )
Fig. 1 Collector Power Dissipation vs.				Fig. 2 Collector Dark Current vs.
Ambient Temperature				Ambient Temperature

	80
)
mW	70
(
C	60
P
dissipation	50
	40
power
	30
Collector
	20
	10
	0
	- 25	0	25	50	75	85	100
			Ambient temperature Ta (˚C)

Fig. 3 Relative Collector Current vs. Ambient Temperature

	175
			VCE = 2V
)			Ee = 0.1mW/cm2
%	150
(
current	125
collector
	100
Relative
	75
	50
	- 25			0		25		50		75		100
				Ambient temperature Ta						(˚C)

	10 - 4	VCE
	5
)	10 - 5	= 10V
A	5
(
CEO	10 - 6
	5
I
current	10 - 7
	5
dark	10 - 8
	5
Collector
	10 - 9
	5
	10 - 10
	5
	10 - 11
	5
	- 25		0	25	50	75	100
				Ambient temperature Ta (˚C)

Fig.4-a Collector Current vs. Irradiance
					(PT481 )
	50	VCE = 2V
		T a = 25˚C
)	20
mA
(
C	10
I
current
	5
Collector
	2
	1		10- 1			1
	2	5		2	5
			Irradiance Ee ( mW/cm2)