Sharp PT4110, PT4110F Datasheet

PT4110/PT4110F

PT4110/PT4110F

■ Features

1.Compact and thin flat package

2.Wide beam angle

(Half intensity angle : ± 70˚ )

3. Visible light cut-off type available ( PT4110F )

■ Applications

1.Optoelectronic switches

2.Encoders

Side View and Thin Flat Type

Phototransistors

■ Outline Dimensions

(Unit : mm)

								1.8
Gate burr	MAX. 0.3	2 - C0.5	Detector					0.7
		3.0					0.7		Epoxy resin
			center
							4˚	4˚
				1.4 1.5
Rugged resin					4.0			MAX. 0.1
	MAX. 0.9						4˚	4˚
								0.15
			(1.7)
	Rugged resin				1.5	1.0
								1	2
	MAX. 0.2				+ -
					17.5
	2 - 0.45+- 0.10.3			0.5				2 - 0.4+- 0.10.3
		1	2	MIN.
			(2.54)					1	Emitter
								2	Collector
		6˚	6˚				Model	Resin type
						PT4110 Pale blue transparent epoxy resin
		6˚	6˚			PT4110F Black visible light cut-off epoxy resin
		2.8				*	Tolerance : ± 0.2 mm
						* ( ) : Reference dimensions

■ Absolute Maximum Ratings

(Ta= 25˚C)

Parameter

Symbol

Rating

Unit

Collector-emitter voltage

VCEO

35

V

Collector current

IC

50

mA

1.4mm

Emitter-collector voltage

V ECO

6

V

Collector power dissipation

PC

75

mW

Operating temperature

Topr

- 25 to +85

˚C

Storage temperature

Tstg

- 40 to +85

˚C

Soldering area

*1 Soldering temperature

Tsol

260

˚C

*1 For MAX. 5 seconds at the position of 1.4 mm from the resin edge

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device”.

PT4110/PT4110F

■ Electro-optical Characteristics							(Ta = 25˚C)
Parameter		Symbol	Conditions	MIN.	TYP.	MAX.		Unit
Collector current	PT4110	I C	*2 Ee = 1mW/cm2	4.0	-	25		mA
	PT4110F		VCE = 5V	2.5	-	19		mA
Dark current		I CEO	Ee = 0, VCE = 10V	-	-	1.0		μ A
Collector-emitter saturation voltage		V CE(sat)	*2 Ee = 1mW/cm2	-	-	1.2		V
			IC = 2.5mA
Collector-emitter breakdown voltage		BVCEO	IC = 0.1mA	35	-	-		V
			*2 Ee = 0
Emitter-collector breakdown voltage		BVECO	IE = 0.01mA	6	-	-		V
			*2 Ee = 0
Peak sensitivity wavelength	PT4110	λ p	-	-	800	-		nm
	PT4110F			-	860	-
Response time	Rise Time	tr	VCE = 2V, IC = 10mA	-	60	-		μ s
	Fall Time	tf	RL = 100Ω	-	53	-		μ s
Half intensity angle		Δθ	-	-	± 70	-		˚
*2 Ee : Irradiance by CIE standard light source A (tungsten)

Fig. 1 Collector Power Dissipation vs. Ambient Temperature

	80
(mW)	70
	60
C
P
dissipation	50
	40
power	30
Collector	20
	10
	0
	- 25	0	25	50	75	85	100

Ambient temperature Ta (˚C)

Fig. 2 Dark Current vs. Ambient Temperature

	10-4	VCE
	5
	10-5	= 10V
	5
(A)	10-6
	5
CEO
	10-7
I	5
current
	10-8
	5
Dark	10-9
	5
	10-10
	5
	10-11
	5
	- 25		0	25	50	75	100

Ambient temperature Ta (˚C )