MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP140/D
Darlington Complementary
Silicon Power Transistors
. . . designed for general±purpose amplifier and low frequency switching applications.
•High DC Current Gain Ð Min h FE = 1000 @ IC = 5 A, VCE = 4 V
•Collector±Emitter Sustaining Voltage Ð @ 30 mA
VCEO(sus) = 60 Vdc (Min) Ð TIP140, TIP145 80 Vdc (Min) Ð TIP141, TIP146
100 Vdc (Min) Ð TIP142, TIP147
• Monolithic Construction with Built±In Base±Emitter Shunt Resistor
MAXIMUM RATINGS
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TIP140 |
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TIP141 |
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TIP142 |
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Rating |
Symbol |
TIP145 |
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TIP146 |
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TIP147 |
Unit |
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Collector±Emitter Voltage |
VCEO |
60 |
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80 |
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100 |
Vdc |
Collector±Base Voltage |
VCB |
60 |
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80 |
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100 |
Vdc |
Emitter±Base Voltage |
VEB |
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5.0 |
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Vdc |
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Collector Current Ð Continuous |
IC |
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10 |
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Adc |
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Peak (1) |
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15 |
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Base Current Ð Continuous |
IB |
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0.5 |
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Adc |
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Total Device Dissipation |
PD |
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125 |
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Watts |
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@ TC = 25_C |
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Operating and Storage Junction |
TJ, Tstg |
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± 65 to + 150 |
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_C |
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Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RθJC |
1.0 |
_C/W |
Thermal Resistance, Case to Ambient |
RθJA |
35.7 |
_C/W |
(1) 5 ms, v 10% Duty Cycle.
DARLINGTON SCHEMATICS
NPN
TIP140
TIP141*
TIP142*
PNP
TIP145
TIP146*
TIP147*
*Motorola Preferred Device
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON POWER TRANSISTORS
60 ± 100 VOLTS
125 WATTS
CASE 340D±02
NPN |
COLLECTOR |
TIP140 |
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TIP141 |
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TIP142 |
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BASE |
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≈ 8.0 k |
≈ 40 |
PNP |
COLLECTOR |
TIP145 |
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TIP146 |
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TIP147 |
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BASE |
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≈ 8.0 k |
≈ 40 |
EMITTER |
EMITTER |
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1996 |
1 |
Motorola Bipolar Power Transistor Device Data |
TIP140 |
TIP141 |
TIP142 |
TIP145 |
TIP146 |
TIP147 |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
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(IC = 30 mA, IB = 0) |
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TIP140, TIP145 |
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60 |
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Ð |
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TIP141, TIP146 |
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80 |
Ð |
Ð |
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TIP142, TIP147 |
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100 |
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Ð |
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Collector Cutoff Current |
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ICEO |
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mA |
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(VCE = 30 Vdc, IB = 0) |
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TIP140, TIP145 |
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2.0 |
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(VCE = 40 Vdc, IB = 0) |
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TIP141, TIP146 |
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Ð |
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2.0 |
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(VCE = 50 Vdc, IB = 0) |
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TIP142, TIP147 |
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2.0 |
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Collector Cutoff Current |
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ICBO |
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mA |
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(VCB = 60 V, IE = 0) |
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TIP140, TIP145 |
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Ð |
1.0 |
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(VCB = 80 V, IE = 0) |
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TIP141, TIP146 |
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Ð |
Ð |
1.0 |
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(VCB = 100 V, IE = 0) |
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TIP142, TIP147 |
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Ð |
Ð |
1.0 |
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Emitter Cutoff Current (VBE = 5.0 V) |
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IEBO |
Ð |
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2 0 |
mA |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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(IC = 5.0 A, VCE = 4.0 V) |
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1000 |
Ð |
Ð |
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(IC = 10 A, VCE = 4.0 V) |
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500 |
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Ð |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 5.0 A, IB = 10 mA) |
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Ð |
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2.0 |
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(IC = 10 A, IB = 40 mA) |
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Ð |
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3.0 |
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Base±Emitter Saturation Voltage |
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VBE(sat) |
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3.5 |
Vdc |
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(IC = 10 A, IB = 40 mA) |
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Base±Emitter On Voltage |
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VBE(on) |
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3.0 |
Vdc |
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(IC = 10 A, VCE = 4.0 Vdc) |
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SWITCHING CHARACTERISTICS |
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Resistive Load (See Figure 1) |
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Delay Time |
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td |
Ð |
0.15 |
Ð |
μs |
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Rise Time |
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(VCC = 30 V, IC = 5.0 A, |
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t |
Ð |
0.55 |
Ð |
μs |
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IB = 20 mA, Duty Cycle v 2.0%, |
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r |
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Storage Time |
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ts |
Ð |
2.5 |
Ð |
μs |
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IB1 = IB2, RC & RB Varied, TJ = 25_C) |
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Fall Time |
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tf |
Ð |
2.5 |
Ð |
μs |
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(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%. |
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RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS |
VCC |
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± 30 V |
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D1, MUST BE FAST RECOVERY TYPE, eg: |
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1N5825 USED ABOVE IB ≈ 100 mA |
RC |
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MSD6100 USED BELOW IB ≈ 100 mA |
SCOPE |
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TUT |
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V2 |
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RB |
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approx |
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+12 V |
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0 |
51 |
D1 |
≈ 8.0 k |
≈ 40 |
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V1 |
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+ 4.0 V |
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appox. |
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± 8.0 V |
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25 |
μ |
s |
for td and tr, D1 is disconnected |
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tr, tf ≤ 10 ns |
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and V2 = 0 |
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DUTY CYCLE = 1.0% |
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For NPN test circuit reverse diode and voltage polarities.
Figure 1. Switching Times Test Circuit
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10 |
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PNP |
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5.0 |
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NPN |
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ts |
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μs) |
2.0 |
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tf |
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( |
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t, TIME |
1.0 |
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0.5 |
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tr |
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td @ VBE(off) = 0 |
VCC = 30 V |
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0.2 |
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IC/IB = 250 |
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IB1 = IB2 |
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0.1 |
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TJ = 25°C |
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0.5 |
1.0 |
3.0 |
5.0 |
10 |
20 |
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0.2 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 2. Switching Times
2 |
Motorola Bipolar Power Transistor Device Data |