Motorola TIP42B, TIP42A, TIP42C, TIP41C, TIP41B Datasheet
...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP41A/D
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
• Collector±Emitter Saturation Voltage Ð
VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc
• Collector±Emitter Sustaining Voltage Ð
VCEO(sus) = 60 Vdc (Min) Ð TIP41A, TIP42A
VCEO(sus) = 80 Vdc (Min) Ð TIP41B, TIP42B
VCEO(sus) = 100 Vdc (Min) Ð TIP41C, TIP42C
•High Current Gain Ð Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc
•Compact TO±220 AB Package
*MAXIMUM RATINGS
|
|
TIP41A |
|
TIP41B |
|
TIP41C |
|
Rating |
Symbol |
TIP42A |
|
TIP42B |
|
TIP42C |
Unit |
|
|
|
|
|
|
|
|
Collector±Emitter Voltage |
VCEO |
60 |
|
80 |
|
100 |
Vdc |
Collector±Base Voltage |
VCB |
60 |
|
80 |
|
100 |
Vdc |
Emitter±Base Voltage |
VEB |
|
5.0 |
|
|
Vdc |
|
Collector Current Ð Continuous |
IC |
|
6 |
|
|
Adc |
|
Peak |
|
|
10 |
|
|
|
|
|
|
|
|
|
|
|
|
Base Current |
IB |
|
2.0 |
|
|
Adc |
|
Total Power Dissipation |
PD |
|
|
|
|
|
|
@ TC = 25_C |
|
|
65 |
|
|
Watts |
|
Derate above 25_C |
|
|
0.52 |
|
|
W/_C |
|
|
|
|
|
|
|
|
|
Total Power Dissipation |
PD |
|
|
|
|
|
|
@ TA = 25_C |
|
|
2.0 |
|
|
Watts |
|
Derate above 25_C |
|
|
0.016 |
|
|
W/_C |
|
|
|
|
|
|
|
|
|
Unclamped Inductive Load Energy (1) |
E |
|
62.5 |
|
|
mJ |
|
|
|
|
|
|
|
||
Operating and Storage Junction |
TJ, Tstg |
|
± 65 to +150 |
|
_C |
||
Temperature Range |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
|
|
|
|
Thermal Resistance, Junction to Ambient |
RθJA |
62.5 |
_C/W |
Thermal Resistance, Junction to Case |
RθJC |
1.92 |
_C/W |
(1) IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
NPN
TIP41A TIP41B*
TIP41C*
PNP
TIP42A TIP42B* TIP42C*
*Motorola Preferred Device
6 AMPERE
POWER TRANSISTORS COMPLEMENTARY SILICON
60 ± 80 ± 100 VOLTS
65 WATTS
CASE 221A±06
TO±220AB
Motorola, Inc. 1995
TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
|
Symbol |
Min |
Max |
Unit |
|
|
|
|
|
|
OFF CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
Collector±Emitter Sustaining Voltage (1) |
TIP41A, TIP42A |
VCEO(sus) |
60 |
Ð |
Vdc |
(IC = 30 mAdc, IB = 0) |
TIP41B, TIP42B |
|
80 |
Ð |
|
|
TIP41C, TIP42C |
|
100 |
Ð |
|
|
|
|
|
|
|
Collector Cutoff Current |
TIP41A, TIP42A |
ICEO |
Ð |
0.7 |
mAdc |
(VCE = 30 Vdc, IB = 0) |
TIP41B, TIP41C |
|
Ð |
0.7 |
|
(VCE = 60 Vdc, IB = 0) |
TIP42B, TIP42C |
|
Ð |
0.7 |
|
Collector Cutoff Current |
|
ICES |
|
|
μAdc |
(VCE = 60 Vdc, VEB = 0) |
TIP41A, TIP42A |
|
Ð |
400 |
|
(VCE = 80 Vdc, VEB = 0) |
TIP41B, TIP42B |
|
Ð |
400 |
|
(VCE = 100 Vdc, VEB = 0) |
TIP41C, TIP42C |
|
Ð |
400 |
|
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) |
|
IEBO |
Ð |
1.0 |
mAdc |
|
|||||
ON CHARACTERISTICS (1) |
|
|
|
|
|
|
|
|
|
|
|
DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) |
|
hFE |
30 |
Ð |
Ð |
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) |
|
|
15 |
75 |
|
Collector±Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc) |
|
VCE(sat) |
Ð |
1.5 |
Vdc |
Base±Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) |
|
VBE(on) |
Ð |
2.0 |
Vdc |
DYNAMIC CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
Current±Gain Ð Bandwidth Product (I C = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) |
fT |
3.0 |
Ð |
MHz |
|
Small±Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) |
|
hfe |
20 |
Ð |
Ð |
|
|||||
(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%. |
|
|
|
|
|
|
TA |
TC |
|
|
|
|
|
|
|
|
|
4.0 |
80 |
|
|
|
|
|
|
|
|
(WATTS) |
3.0 |
60 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
DISSIPATION |
|
|
|
|
|
TC |
|
|
|
|
2.0 |
40 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
, POWER |
1.0 |
20 |
|
|
|
TA |
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
D |
|
|
|
|
|
|
|
|
|
|
P |
|
|
|
|
|
|
|
|
|
|
|
0 |
0 |
20 |
|
|
|
|
120 |
|
|
|
|
0 |
40 |
60 |
80 |
100 |
140 |
160 |
T, TEMPERATURE (°C)
|
Figure 1. Power Derating |
|
|
|
|
|
|
|
|
|||
|
VCC |
|
2.0 |
|
|
|
|
|
|
|
|
|
|
+ 30 V |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
25 μs |
RC |
|
1.0 |
|
|
|
|
|
|
TJ = 25°C |
|
|
|
0.7 |
|
|
|
|
|
|
VCC = 30 V |
|
|||
+11 V |
SCOPE |
|
|
|
|
|
|
|
IC/IB = 10 |
|
|
|
|
0.5 |
|
|
|
|
|
|
|
|
|||
RB |
|
μs) |
|
|
|
|
|
|
|
|
|
|
0 |
|
0.3 |
|
|
|
tr |
|
|
|
|
|
|
|
|
( |
|
|
|
|
|
|
|
|
|
|
± 9.0 V |
D1 |
TIME |
0.2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
tr, tf ≤ 10 ns |
|
t, |
0.1 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
DUTY CYCLE = 1.0% |
± 4 V |
|
0.07 |
|
|
|
|
|
td @ VBE(off) ≈ 5.0 V |
|
|
|
|
|
|
0.05 |
|
|
|
|
|
|
|
|
|
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS |
|
0.03 |
|
|
|
|
|
|
|
|
|
|
D1 MUST BE FAST RECOVERY TYPE, e.g.: |
|
|
|
|
|
|
|
|
|
|
||
|
0.02 |
|
|
|
|
|
|
|
|
|
||
1N5825 USED ABOVE IB ≈ 100 mA |
|
|
0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1.0 |
2.0 |
4.0 |
6.0 |
|
MSD6100 USED BELOW IB ≈ 100 mA |
|
|
|
I |
, COLLECTOR CURRENT (AMP) |
|
|
|||||
|
|
|
|
|
|
C |
|
|
|
|
|
|
Figure 2. Switching Time Test Circuit |
Figure 3. Turn±On Time |
2 |
Motorola Bipolar Power Transistor Device Data |
Loading...