MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP35A/D
Complementary |
Silicon |
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High-Power |
Transistors |
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. . . for general±purpose power amplifier and switching applications. |
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• 25 A Collector Current |
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• Low Leakage Current Ð I CEO = 1.0 mA @ 30 and 60 V |
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• Excellent DC Gain Ð h FE = 40 Typ @ 15 A |
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• High Current Gain Bandwidth Product Ð |
hfe = 3.0 min @ IC = 1.0 A, |
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f = 1.0 MHz |
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MAXIMUM RATINGS |
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TIP35A |
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TIP35B |
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TIP35C |
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Rating |
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Symbol |
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TIP36A |
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TIP36B |
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TIP36C |
Unit |
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Collector±Emitter Voltage |
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VCEO |
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60 V |
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80 V |
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100 V |
Vdc |
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Collector±Base Voltage |
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VCB |
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60 V |
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80 V |
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100 V |
Vdc |
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Emitter±Base Voltage |
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VEB |
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5.0 |
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Vdc |
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Collector Current Ð Continuous |
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IC |
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25 |
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Adc |
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Peak (1) |
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40 |
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Base Current Ð Continuous |
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IB |
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5.0 |
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Adc |
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Total Power Dissipation |
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PD |
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@ TC = 25_C |
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125 |
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Watts |
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Derate above 25_C |
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1.0 |
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W/_C |
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Operating and Storage Junction |
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TJ, Tstg |
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± 65 to +150 |
_C |
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Temperature Range |
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Unclamped Inductive Load |
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ESB |
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90 |
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mJ |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
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1.0 |
_C/W |
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Junction±To±Free±Air Thermal Resistance |
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RθJA |
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35.7 |
_C/W |
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NPN
TIP35A TIP35B*
TIP35C*
PNP
TIP36A TIP36B* TIP36C*
*Motorola Preferred Device
25 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 ± 100 VOLTS
125 WATTS
CASE 340D±01
TO±218AC
(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle v 10%. |
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(WATTS) |
125 |
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100 |
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DISSIPATION |
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75 |
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,POWER |
50 |
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25 |
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D |
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P |
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0 |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
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TC, CASE TEMPERATURE (°C) |
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Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995
TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
(IC = 30 mA, IB = 0) |
TIP35A, TIP36A |
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60 |
Ð |
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TIP35B, TIP36B |
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80 |
Ð |
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TIP35C, TIP36C |
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100 |
Ð |
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Collector±Emitter Cutoff Current |
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ICEO |
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mA |
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(VCE = 30 V, IB = 0) |
TIP35A, TIP36A |
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Ð |
1.0 |
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(VCE = 60 V, IB = 0) |
TIP35B, TIP35C, TIP36B, TIP36C |
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Ð |
1.0 |
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Collector±Emitter Cutoff Current |
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ICES |
Ð |
0.7 |
mA |
(VCE = Rated VCEO, VEB = 0) |
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Emitter±Base Cutoff Current |
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IEBO |
Ð |
1.0 |
mA |
(VEB = 5.0 V, IC = 0) |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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Ð |
(IC = 1.5 A, VCE = 4.0 V) |
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25 |
Ð |
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(IC = 15 A, VCE = 4.0 V) |
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15 |
75 |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
(IC = 15 A, IB = 1.5 A) |
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Ð |
1.8 |
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(IC = 25 A, IB = 5.0 A) |
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Ð |
4.0 |
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Base±Emitter On Voltage |
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VBE(on) |
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Vdc |
(IC = 15 A, VCE = 4.0 V) |
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Ð |
2.0 |
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(IC = 25 A, VCE = 4.0 V) |
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Ð |
4.0 |
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DYNAMIC CHARACTERISTICS |
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Small±Signal Current Gain |
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hfe |
25 |
Ð |
Ð |
(IC = 1.0 A, VCE = 10 V, f = 1.0 kHz) |
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Current±Gain Ð Bandwidth Product |
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fT |
3.0 |
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MHz |
(IC = 1.0 A, VCE = 10 V, f = 1.0 MHz) |
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(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%.
TURN±ON TIME |
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VCC |
± 30 V |
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RL |
3.0 |
+ 2.0 V |
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10 |
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TO SCOPE |
0 |
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tr ≤ 20 ns |
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RB |
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tr ≤ |
±11.0 V |
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20 ns |
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μS |
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10 TO 100 |
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DUTY CYCLE ≈ 2.0% |
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TURN±OFF TIME |
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VCC |
± 30 V |
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RL |
3.0 |
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+ 9.0 V |
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10 |
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TO SCOPE |
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0 |
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tr ≤ 20 ns |
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RB |
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±11.0 V |
≤ 20 ns |
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tr |
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10 to 100 μs |
VBB |
+ 4.0 V |
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DUTY CYCLE ≈ 2.0% |
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FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES.
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2.0 |
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1.0 |
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TJ = 25°C |
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IC/IB = 10 |
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0.7 |
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VCC = 30 V |
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0.5 |
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VBE(off) = 2 V |
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μs) |
0.3 |
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tr |
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( |
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t, TIME |
0.2 |
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0.1 |
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td |
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(PNP) |
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(NPN) |
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0.07 |
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0.05 |
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0.03 |
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0.02 |
0.5 |
0.7 |
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2.0 |
3.0 |
5.0 |
7.0 |
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20 |
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0.3 |
1.0 |
10 |
30 |
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IC, COLLECTOR CURRENT (AMPERES)
Figure 2. Switching Time Equivalent Test Circuits |
Figure 3. Turn±On Time |
2 |
Motorola Bipolar Power Transistor Device Data |
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