Motorola TIP32B, TIP32C, TIP32A, TIP31C, TIP31B Datasheet

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by TIP31A/D

Complementary Silicon Plastic

Power Transistors

. . . designed for use in general purpose amplifier and switching applications.

Collector±Emitter Saturation Voltage Ð

VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc

Collector±Emitter Sustaining Voltage Ð

VCEO(sus) = 60 Vdc (Min) Ð TIP31A, TIP32A

VCEO(sus) = 80 Vdc (Min) Ð TIP31B, TIP32B

VCEO(sus) = 100 Vdc (Min) Ð TIP31C, TIP32C

High Current Gain Ð Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc

Compact TO±220 AB Package

*MAXIMUM RATINGS

 

 

TIP31A

 

TIP318

TIP31C

 

Rating

Symbol

TIP32A

 

TIP32B

TIP32C

Unit

 

 

 

 

 

 

 

Collector±Emitter Voltage

VCEO

60

 

80

100

Vdc

Collector±Base Voltage

VCB

60

 

80

100

Vdc

Emitter±Base Voltage

VEB

 

5.0

 

Vdc

Collector Current Ð Continuous

IC

 

3.0

 

Adc

Peak

 

 

5.0

 

 

 

 

 

 

 

 

Base Current

IB

 

1.0

 

Adc

Total Power Dissipation

PD

 

 

 

 

 

@ TC = 25_C

 

 

40

 

Watts

Derate above 25_C

 

 

0.32

 

W/_C

 

 

 

 

 

 

 

Total Power Dissipation

PD

 

 

 

 

 

@ TA = 25_C

 

 

2.0

 

Watts

Derate above 25_C

 

 

0.016

 

W/_C

 

 

 

 

 

 

Unclamped Inductive

E

 

32

 

mJ

Load Energy (1)

 

 

 

 

 

 

 

 

 

 

 

Operating and Storage Junction

TJ, Tstg

 

± 65 to +150

_C

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Ambient

RθJA

62.5

_C/W

Thermal Resistance, Junction to Case

RθJC

3.125

_C/W

(1) IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω..

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

NPN

TIP31A TIP31B*

TIP31C*

PNP

TIP32A TIP32B* TIP32C*

*Motorola Preferred Device

3 AMPERE

POWER TRANSISTORS COMPLEMENTARY SILICON

60 ± 80 ± 100 VOLTS

40 WATTS

CASE 221A±06

TO±220AB

Motorola, Inc. 1995

Motorola TIP32B, TIP32C, TIP32A, TIP31C, TIP31B Datasheet

TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage (1)

 

VCEO(sus)

 

 

Vdc

(IC = 30 mAdc, IB = 0)

TIP31A, TIP32A

 

60

Ð

 

 

TIP31B, TIP32B

 

80

Ð

 

 

TIP31C, TIP32C

 

100

Ð

 

 

 

 

 

 

 

Collector Cutoff Current (VCE = 30 Vdc, IB = 0)

TIP31A, TIP32A

ICEO

Ð

0.3

mAdc

Collector Cutoff Current (VCE = 60 Vdc, IB = 0)

TIP31B, TIP31C

 

Ð

0.3

 

 

TIP32B, TIP32C

 

Ð

0.3

 

 

 

 

 

 

 

Collector Cutoff Current

 

ICES

 

 

μAdc

(VCE = 60 Vdc, VEB = 0)

TIP31A, TIP32A

 

Ð

200

 

(VCE = 80 Vdc, VEB = 0)

TIP31B, TIP32B

 

Ð

200

 

(VCE = 100 Vdc, VEB = 0)

TIP31C, TIP32C

 

Ð

200

 

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

 

IEBO

Ð

1.0

mAdc

ON CHARACTERISTICS (1)

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)

 

hFE

25

Ð

Ð

DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)

 

 

10

50

 

Collector±Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)

 

VCE(sat)

Ð

1.2

Vdc

Base±Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)

 

VBE(on)

Ð

1.8

Vdc

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

Current±Gain Ð Bandwidth Product (I C = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

fT

3.0

Ð

MHz

Small±Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

 

hfe

20

Ð

Ð

(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

 

 

 

 

 

 

TC

TA

 

 

 

 

 

 

 

 

 

40

4.0

 

 

 

 

 

 

 

 

(WATTS)

30

3.0

 

 

TC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DISSIPATION

20

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, POWER

10

1.0

 

 

TA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

 

 

P

 

 

 

 

 

 

 

 

 

 

 

0

0

20

 

 

 

 

120

 

 

 

 

0

40

60

80

100

140

160

 

 

 

 

 

T, TEMPERATURE (°C)

 

 

 

Figure 1. Power Derating

TURN±ON PULSE

VCC

 

 

 

2.0

 

 

 

 

 

APPROX

 

RC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

+11 V

 

 

 

 

 

 

 

 

IC/IB = 10

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

 

Vin

 

SCOPE

 

0.7

 

 

 

 

Vin 0

 

 

 

t @ V

CC

= 30 V

 

 

VEB(off)

 

RB

 

 

 

0.5

r

 

 

 

 

 

 

 

 

 

 

 

 

t1

 

 

 

(μs)

0.3

tr @ VCC = 10 V

 

 

 

 

 

Cjd << Ceb

 

 

 

 

 

 

 

 

 

 

 

 

 

APPROX

t3

 

TIMEt,

 

 

 

 

 

 

 

 

± 4.0 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

+11 V

 

t1 7.0 ns

 

 

 

0.1

 

 

 

 

 

 

 

100 < t2 < 500 μs

 

 

 

 

 

 

 

 

 

 

 

 

 

0.07

 

 

 

td @ VEB(off) = 2.0 V

 

Vin

 

t3 < 15 ns

 

 

 

 

 

 

 

 

 

 

 

0.05

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t2

DUTY CYCLE 2.0%

 

 

0.03

 

 

 

 

 

 

 

 

0.02

 

 

 

 

 

TURN±OFF PULSE

APPROX ±9.0 V

 

 

 

0.05 0.07 0.1

 

 

0.5 0.7 1.0

3.0

 

 

 

0.03

 

0.3

 

 

 

 

 

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.

 

 

 

IC, COLLECTOR CURRENT (AMP)

 

Figure 2. Switching Time Equivalent Circuit

Figure 3. Turn±On Time

3±2

Motorola Bipolar Power Transistor Device Data

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