MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP31A/D
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
• Collector±Emitter Saturation Voltage Ð
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
• Collector±Emitter Sustaining Voltage Ð
VCEO(sus) = 60 Vdc (Min) Ð TIP31A, TIP32A
VCEO(sus) = 80 Vdc (Min) Ð TIP31B, TIP32B
VCEO(sus) = 100 Vdc (Min) Ð TIP31C, TIP32C
•High Current Gain Ð Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc
•Compact TO±220 AB Package
*MAXIMUM RATINGS
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TIP31A |
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TIP318 |
TIP31C |
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Rating |
Symbol |
TIP32A |
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TIP32B |
TIP32C |
Unit |
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Collector±Emitter Voltage |
VCEO |
60 |
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80 |
100 |
Vdc |
Collector±Base Voltage |
VCB |
60 |
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80 |
100 |
Vdc |
Emitter±Base Voltage |
VEB |
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5.0 |
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Vdc |
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Collector Current Ð Continuous |
IC |
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3.0 |
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Adc |
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Peak |
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5.0 |
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Base Current |
IB |
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1.0 |
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Adc |
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Total Power Dissipation |
PD |
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@ TC = 25_C |
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40 |
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Watts |
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Derate above 25_C |
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0.32 |
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W/_C |
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Total Power Dissipation |
PD |
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@ TA = 25_C |
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2.0 |
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Watts |
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Derate above 25_C |
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0.016 |
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W/_C |
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Unclamped Inductive |
E |
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32 |
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mJ |
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Load Energy (1) |
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Operating and Storage Junction |
TJ, Tstg |
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± 65 to +150 |
_C |
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Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Ambient |
RθJA |
62.5 |
_C/W |
Thermal Resistance, Junction to Case |
RθJC |
3.125 |
_C/W |
(1) IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω..
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
NPN
TIP31A TIP31B*
TIP31C*
PNP
TIP32A TIP32B* TIP32C*
*Motorola Preferred Device
3 AMPERE
POWER TRANSISTORS COMPLEMENTARY SILICON
60 ± 80 ± 100 VOLTS
40 WATTS
CASE 221A±06
TO±220AB
Motorola, Inc. 1995
TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
(IC = 30 mAdc, IB = 0) |
TIP31A, TIP32A |
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60 |
Ð |
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TIP31B, TIP32B |
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80 |
Ð |
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TIP31C, TIP32C |
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100 |
Ð |
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Collector Cutoff Current (VCE = 30 Vdc, IB = 0) |
TIP31A, TIP32A |
ICEO |
Ð |
0.3 |
mAdc |
Collector Cutoff Current (VCE = 60 Vdc, IB = 0) |
TIP31B, TIP31C |
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Ð |
0.3 |
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TIP32B, TIP32C |
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Ð |
0.3 |
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Collector Cutoff Current |
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ICES |
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μAdc |
(VCE = 60 Vdc, VEB = 0) |
TIP31A, TIP32A |
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Ð |
200 |
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(VCE = 80 Vdc, VEB = 0) |
TIP31B, TIP32B |
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Ð |
200 |
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(VCE = 100 Vdc, VEB = 0) |
TIP31C, TIP32C |
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Ð |
200 |
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Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) |
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IEBO |
Ð |
1.0 |
mAdc |
ON CHARACTERISTICS (1) |
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DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) |
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hFE |
25 |
Ð |
Ð |
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) |
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10 |
50 |
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Collector±Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc) |
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VCE(sat) |
Ð |
1.2 |
Vdc |
Base±Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) |
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VBE(on) |
Ð |
1.8 |
Vdc |
DYNAMIC CHARACTERISTICS |
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Current±Gain Ð Bandwidth Product (I C = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) |
fT |
3.0 |
Ð |
MHz |
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Small±Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) |
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hfe |
20 |
Ð |
Ð |
(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%. |
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TC |
TA |
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40 |
4.0 |
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(WATTS) |
30 |
3.0 |
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TC |
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DISSIPATION |
20 |
2.0 |
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, POWER |
10 |
1.0 |
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TA |
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D |
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P |
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0 |
0 |
20 |
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120 |
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0 |
40 |
60 |
80 |
100 |
140 |
160 |
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T, TEMPERATURE (°C) |
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Figure 1. Power Derating
TURN±ON PULSE |
VCC |
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2.0 |
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APPROX |
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RC |
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+11 V |
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IC/IB = 10 |
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1.0 |
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TJ = 25°C |
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Vin |
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SCOPE |
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0.7 |
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Vin 0 |
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t @ V |
CC |
= 30 V |
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VEB(off) |
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RB |
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0.5 |
r |
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t1 |
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(μs) |
0.3 |
tr @ VCC = 10 V |
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Cjd << Ceb |
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APPROX |
t3 |
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TIMEt, |
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± 4.0 V |
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+11 V |
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t1 ≤ 7.0 ns |
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0.1 |
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100 < t2 < 500 μs |
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0.07 |
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td @ VEB(off) = 2.0 V |
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Vin |
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t3 < 15 ns |
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0.05 |
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t2 |
DUTY CYCLE ≈ 2.0% |
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0.03 |
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0.02 |
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TURN±OFF PULSE |
APPROX ±9.0 V |
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0.05 0.07 0.1 |
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0.5 0.7 1.0 |
3.0 |
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0.03 |
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0.3 |
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RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 2. Switching Time Equivalent Circuit |
Figure 3. Turn±On Time |
3±2 |
Motorola Bipolar Power Transistor Device Data |