MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP33B/D
Complementary Silicon
High-Power Transistors
. . . for general±purpose power amplifier and switching applications.
•10 A Collector Current
•Low Leakage Current Ð I CEO = 0.7 mA @ 60 V
•Excellent dc Gain Ð h FE = 40 Typ @ 3.0 A
•High Current Gain Bandwidth Product Ð h fe = 3.0 min @ IC = 0.5 A, f = 1.0 MHz
MAXIMUM RATINGS
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TIP33B |
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TIP33C |
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Rating |
Symbol |
TIP34B |
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TIP34C |
Unit |
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Collector±Emitter Voltage |
VCEO |
80 V |
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100 V |
Vdc |
Collector±Base Voltage |
VCB |
80 V |
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100 V |
Vdc |
Emitter±Base Voltage |
VEB |
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5.0 |
Vdc |
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Collector Current Ð Continuous |
IC |
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10 |
Adc |
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Peak (1) |
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15 |
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Base Current Ð Continuous |
IB |
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3.0 |
Adc |
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Total Power Dissipation |
PD |
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@ TC = 25_C |
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80 |
Watts |
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Derate above 25_C |
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0.64 |
W/_C |
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Operating and Storage Junction |
TJ, Tstg |
± 65 to +150 |
_C |
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Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RθJC |
1.56 |
_C/W |
Junction±To±Free±Air Thermal Resistance |
RθJA |
35.7 |
_C/W |
(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle v 10%.
NPN
TIP33B*
TIP33C
PNP
TIP34B* TIP34C
*Motorola Preferred Device
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
100 VOLTS
80 WATTS
CASE 340D±01
TO±218AC
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500 |
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200 |
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VCE = 4.0 V |
GAIN |
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TJ = 25°C |
100 |
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, DC CURRENT |
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50 |
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20 |
NPN |
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FE |
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h |
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PNP |
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10 |
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5.0 |
1.0 |
10 |
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0.1 |
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995
TIP33B TIP33C TIP34B |
TIP34C |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
VCEO(sus) |
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Vdc |
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(IC = 30 mA, IB = 0) |
TIP33B, TIP34B |
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80 |
Ð |
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TIP33C, TIP34C |
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100 |
Ð |
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Collector±Emitter Cutoff Current |
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ICEO |
Ð |
0.7 |
mA |
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(VCE = 60 V, IB = 0) |
TIP33B, TIP33C, TIP34B, TIP34C |
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Collector±Emitter Cutoff Current |
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ICES |
Ð |
0.4 |
mA |
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(VCE = Rated VCEO, VEB = 0) |
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Emitter±Base Cutoff Current |
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IEBO |
Ð |
1.0 |
mA |
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(VEB = 5.0 V, IC = 0) |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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Ð |
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(IC = 1.0 A, VCE = 4.0 V) |
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40 |
Ð |
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(IC = 3.0 A, VCE = 4.0 V) |
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20 |
100 |
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Collector±Emitter Saturation Voltage |
VCE(sat) |
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Vdc |
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(IC = 3.0 A, IB = 0.3 A) |
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Ð |
1.0 |
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(IC = 10 A, IB = 2.5 A) |
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Ð |
4.0 |
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Base±Emitter On Voltage |
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VBE(on) |
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Vdc |
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(IC = 3.0 A, VCE = 4.0 V) |
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Ð |
1.6 |
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(IC = 10 A, VCE = 4.0 V) |
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Ð |
3.0 |
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DYNAMIC CHARACTERISTICS |
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Small±Signal Current Gain |
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hfe |
20 |
Ð |
Ð |
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(IC = 0.5 A, VCE = 10 V, f = 1.0 kHz) |
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Current±Gain Ð Bandwidth Product |
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fT |
3.0 |
Ð |
MHz |
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(IC = 0.5 A, VCE = 10 V, f = 1.0 MHz) |
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(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%. |
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20 |
(AMPS) |
15 |
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(AMPS) |
15 |
CURRENT |
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300 μs |
CURRENT |
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10 |
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1.0 ms |
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5.0 |
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3.0 |
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10 ms |
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dc |
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10 |
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COLLECTOR |
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COLLECTOR |
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2.0 |
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1.0 |
SECONDARY BREAKDOWN LIMIT |
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BONDING WIRE LIMIT |
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0.5 |
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5.0 |
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THERMAL LIMIT |
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TIP33B |
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, |
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TIP34B |
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, |
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C |
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C |
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I |
0.2 |
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I |
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TC = 25°C |
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TIP33C |
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0.1 |
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TIP34C |
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0 |
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2.0 |
3.0 |
5.0 |
7.0 |
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30 |
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70 |
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1.0 |
10 |
20 |
50 |
100 |
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L = 200 μH |
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IC/IB ≥ |
5.0 |
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VBE(off) = 0 to 5.0 V |
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TC = 100°C |
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TIP33C |
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TIP33B |
TIP34C |
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TIP34B |
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0 |
20 |
40 |
60 |
80 |
100 |
VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
Figure 2. Maximum Rated Forward Bias |
Figure 3. Maximum Rated Forward Bias |
Safe Operating Area |
Safe Operating Area |
FORWARD BIAS |
REVERSE BIAS |
The Forward Bias Safe Operating Area represents the voltage and current conditions these devices can withstand
during forward bias. The data is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10%, and must be derated thermally for TC > 25_C.
The Reverse Bias Safe Operating Area represents the voltage and current conditions these devices can withstand during reverse biased turn±off. This rating is verified under clamped conditions so the device is never subjected to an avalanche mode.
2 |
Motorola Bipolar Power Transistor Device Data |
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