NEC UPA1478H Datasheet
DATA SHEET
SILICON TRANSISTOR ARRAY
µ
PA1478
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1478 is NPN silicon epitaxial Darlington
Power Transistor Array that built in Surge Absorber and
4 circuits designed for driving solenoid, relay, lamp and
so on.
FEATURES
• Surge Absorber (Zener Diode) built in.
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
ORDERING INFORMATION
Part Number Package Quality Grade
µ
PA1478H 10 Pin SIP Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 31 ±4V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Surge Sustaining Energy E
Collector Current (DC) I
Collector Current (pulse) I
Total Power Dissipation P
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
CEO 31 ±4V
EBO 7V
CEO (SUS) 40 mJ/unit
C(DC) ±2 A/unit
C(pulse)* ±4 A/unit
T1** 3.5 W
T2*** 28 W
J 150 ˚C
stg –55 to +150 ˚C
26.8 MAX.
10
2.5
1.4 0.6 ±0.1
1 2 3 4 5 6 7 8 9 10
3
2
1
(B)
R
1 R2
PACKAGE DIMENSION
(in millimeters)
4.0
2.54
CONNECTION DIAGRAM
579
468
(C)
PIN No.
2, 4, 6, 8
3, 5, 7, 9
1, 10
R
R
(E)
.
1 = 10 kΩ
.
.
2 = 500 Ω
.
: Base (B)
: Collector (C)
: Emitter (E)
10 MIN.
1.4
0.5 ±0.1
10
* PW ≤ 300
µ
s, Duty Cycle ≤ 10 %
** 4 Circuits, T
*** 4 Circuits, T
Document No. IC-3566
(O.D. No. IC-6634)
Date Published November 1994 P
Printed in Japan
a = 25 ˚C
c = 25 ˚C
The information in this document is subject to change without notice.
©
1994
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
g
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Leakage Current ICBO 10
Emitter Leakage Current IEBO 1 mA VEB = 5 V, IC = 0
Collector to Emitter VCEO(SUS) 27 31 35 V IC = 1 A,
Sustaining Voltage L = 3 mH
DC Current Gain hFE1
DC Current Gain hFE2
Collector Saturation Voltage VCE(sat)
Base Saturation Voltage VBE(sat)
Turn On Time ton 0.5
Storage Time tstg 3
Fall Time tf 1
*
1000 — VCE = 2 V, IC = 0.5 A
*
2000 30000 — VCE = 2 V, IC = 1 A
*
*
1.5 V IC = 1 A, IB = 1 mA
2 V IC = 1 A, IB = 1 mA
µ
A VCB = 20 V, IE = 0
µ
s
IC = 1 A
µ
µ
IB1 = –IB2 = 1 mA
s
s
.
VCC = 20 V, RL = 20 Ω
.
See test circuit
* PW ≤ 350 µs, Duty Cycle ≤ 2 % / pulsed
SWITCHING TIME TEST CIRCUIT
µ
PA1478
.
.
.
L = 20 Ω
R
.
I
B1
IB2
IC
tf
.
V
CC = 20 V
.
Base Current
Wave Form
Collector
Current
Wave Form
90 %
10 %
t
on tst
VIN
PW
.
PW = 50 s
Duty Cycle ≤ 2 %
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
µ
.
I
IB2
BB = –5 V
V
IC
B1
T.U.T.
.
.
2
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