DATA SHEET
SILICON TRANSISTOR ARRAY
μPA1478
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The μPA1478 is NPN silicon epitaxial Darlington Power Transistor Array that built in Surge Absorber and 4 circuits designed for driving solenoid, relay, lamp and so on.
FEATURES
•Surge Absorber (Zener Diode) built in.
•Easy mount by 0.1 inch of terminal interval.
•High hFE for Darlington Transistor.
ORDERING INFORMATION
Part Number |
Package |
Quality Grade |
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μPA1478H |
10 Pin SIP |
Standard |
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Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage |
VCBO |
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31 ±4 |
V |
Collector to Emitter Voltage |
VCEO |
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31 ±4 |
V |
Emitter to Base Voltage |
VEBO |
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7 |
V |
Surge Sustaining Energy |
ECEO (SUS) |
40 |
mJ/unit |
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Collector Current (DC) |
IC(DC) |
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±2 |
A/unit |
Collector Current (pulse) |
IC(pulse)* |
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±4 |
A/unit |
Total Power Dissipation |
PT1** |
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3.5 |
W |
Total Power Dissipation |
PT2*** |
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28 |
W |
Junction Temperature |
TJ |
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150 |
˚C |
Storage Temperature |
Tstg |
–55 to +150 ˚C |
*PW ≤ 300 μs, Duty Cycle ≤ 10 %
**4 Circuits, Ta = 25 ˚C
***4 Circuits, Tc = 25 ˚C
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PACKAGE DIMENSION |
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(in millimeters) |
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26.8 MAX. |
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4.0 |
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10 |
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2.5 |
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10 MIN. |
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2.54 |
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1.4 |
1.4 |
0.6 ±0.1 |
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0.5 ±0.1 |
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1 2 3 4 5 6 7 8 910 |
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CONNECTION DIAGRAM |
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3 |
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5 |
7 |
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9 |
2 |
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4 |
6 |
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8 |
1 |
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10 |
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(C) |
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PIN No. |
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2, 4, 6, 8: Base (B) |
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(B) |
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3, 5, 7, 9: Collector (C) |
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1, 10 |
: Emitter (E) |
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. |
10 kΩ |
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R1 |
R2 |
R1 =. |
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500 Ω |
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R2 =. |
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(E) |
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The information in this document is subject to change without notice.
Document No. IC-3566
(O.D. No. IC-6634)
Date Published |
November 1994 P |
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Printed in Japan |
© |
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1994 |
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μPA1478
ELECTRICAL CHARACTERISTICS |
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(TA = 25 ˚C) |
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CHARACTERISTIC |
SYMBOL |
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MIN. |
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TYP. |
MAX. |
UNIT |
TEST CONDITIONS |
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Collector Leakage Current |
ICBO |
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10 |
μA |
VCB = 20 V, IE = 0 |
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Emitter Leakage Current |
IEBO |
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1 |
mA |
VEB = 5 V, IC = 0 |
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Collector to Emitter |
VCEO(SUS) |
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27 |
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31 |
35 |
V |
IC = 1 A, |
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Sustaining Voltage |
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L = 3 mH |
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DC Current Gain |
hFE1 |
* |
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1000 |
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— |
VCE = 2 V, IC = 0.5 A |
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DC Current Gain |
hFE2 |
* |
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2000 |
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30000 |
— |
VCE = 2 V, IC = 1 A |
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Collector Saturation Voltage |
VCE(sat) |
* |
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1.5 |
V |
IC = 1 A, IB = 1 mA |
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Base Saturation Voltage |
VBE(sat) |
* |
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2 |
V |
IC = 1 A, IB = 1 mA |
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Turn On Time |
ton |
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0.5 |
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μs |
IC = 1 A |
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IB1 = –IB2 = 1 mA |
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Storage Time |
tstg |
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3 |
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μs |
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Ω |
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VCC =. 20 V, RL |
=. 20 |
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Fall Time |
tf |
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1 |
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μs |
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See test circuit |
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* PW ≤ 350 μs, Duty Cycle ≤ 2 % / pulsed
SWITCHING TIME TEST CIRCUIT
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. |
20 Ω |
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RL =. |
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VIN |
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IB1 |
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IC |
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Base Current |
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IB1 |
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Wave Form |
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IB2 |
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IB2 |
T.U.T. |
. |
20 V |
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VCC =. |
90 % |
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Collector |
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IC |
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PW |
. |
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Current |
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–5 V |
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Wave Form |
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. |
VBB =. |
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10 % |
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PW =. 50 |
μ s |
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Duty Cycle ≤ 2 % |
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ton |
tstg |
tf |
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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