NEC UPA1800GR-9JG Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA1800

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The PA1800 is a switching device which can be driven directly by a 4.0-V power source.

The PA1800 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

FEATURES

•Can be driven by a 4.0-V power source

•Low on-state resistance

RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)3 = 45 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)

ORDERING INFORMATION

PART NUMBER	PACKAGE
PA1800GR-9JG	Power TSSOP8

PACKAGE DRAWING (Unit : mm)

8 5

1, 5, 8

: Drain

1.2 MAX.

2, 3, 6, 7: Source

1.0±0.05

4

: Gate

0.25

3°

+5°

–3°

0.5

0.1±0.05

1 4

0.6 +0.15–0.1

3.15 ±0.15
3.0 ±0.1	0.145 ±0.055
0.65	0.8 MAX.

0.27 –0.08+0.03

0.10 M

6.4 ±0.2
4.4 ±0.1	1.0 ±0.2
	0.1

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

EQUIVALENT CIRCUIT

Drain to Source Voltage

VDSS

30

V

Gate to Source Voltage

VGSS

± 20

V

Drain

Drain Current (DC)

ID(DC)

± 5.0

A

Body

Drain Current (pulse) Note1

ID(pulse)

± 20

A

Gate

Diode

Total Power Dissipation Note2

PT

2.0

W

Gate

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Protection

Source

Diode

Notes 1.

PW ≤ 10 s, Duty Cycle ≤

1 %

2.

Mounted on ceramic substrate of 50 cm2 x 1.1 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No.	D11407EJ1V0DS00 (1st edition)	The mark shows major revised points.	©		1999, 2000
Date Published	February 2000 NS CP(K)

Printed in Japan

PA1800

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNIT
Zero Gate Voltage Drain Current	IDSS	VDS = 30 V, VGS = 0 V				10	A
Gate Leakage Current	IGSS	VGS = ±20 V, VDS = 0 V				±10	A
Gate Cut-off Voltage	VGS(off)	VDS = 10 V, ID = 1 mA		1.0	1.41	2.0	V
Forward Transfer Admittance	| yfs |	VDS = 10 V, ID = 3.0 A		3.0	7.0		S
Drain to Source On-state Resistance	RDS(on)1	VGS = 10 V, ID = 3.0 A			20	27	mΩ
	RDS(on)2	VGS = 4.5 V, ID = 3.0 A			29	39	mΩ
	RDS(on)3	VGS = 4.0 V, ID = 3.0 A			32	45	mΩ
Input Capacitance	Ciss	VDS = 10 V			680		pF
Output Capacitance	Coss	VGS = 0 V			470		pF
Reverse Transfer Capacitance	Crss	f = 1 MHz			170		pF
Turn-on Delay Time	td(on)	VDD = 15 V			18		ns
Rise Time	tr	ID = 3.0 A			70		ns
Turn-off Delay Time	td(off)	VGS(on) = 10 V			60		ns
		RG = 10 Ω
Fall Time	tf				26		ns
Total Gate Charge	QG	VDD = 24 V			23		nC
Gate to Source Charge	QGS	ID = 5.0 A			2		nC
Gate to Drain Charge	QGD	VGS = 10 V			7		nC
Diode Forward Voltage	VF(S-D)	IF = 5.0 A, VGS = 0 V			0.74		V
Reverse Recovery Time	trr	IF = 5.0 A, VGS = 0 V			60		ns
		di/dt = 100 A/ s
Reverse Recovery Charge	Qrr				80		nC
TEST CIRCUIT 1 SWITCHING TIME			TEST CIRCUIT 2 GATE CHARGE

	D.U.T.
	RL	VGS			90 %
	VGS	10 %		VGS(on)
	Wave Form
		0
PG.	RG
	VDD
		ID	90 %		90 %
				ID
VGS					10 %
	ID	0 10 %
0
	Wave Form
τ		td(on)	tr	td(off)	tf
τ = 1 s			ton		toff

Duty Cycle ≤ 1 %

	D.U.T.
	IG = 2 mA	RL
PG.	50 Ω	VDD

2	Data Sheet D11407EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = 25 ° C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

	100
- %	80
Factor	60
dT - Derating	40
	20
	0	60	90	120	150
	30
	TA - Ambient Temperature - ˚C

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

	20
		Pulsed
- A	15	VGS = 4.5 V
Current				VGS = 4.0 V
ID - Drain	10
				VGS = 2.5 V
	5
	0
	0	0.2	0.4	0.6	0.8	1.0

VDS - Drain to Source Voltage - V

GATE TO SOURCE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

- V	2.0
		VDS = 10 V
-off Voltage		ID = 1 mA
	1.5
to Source Cut	1.0
VGS(off) - Gate	0.5
	− 50			0		50		100		150

Tch - Channel Temperature - ˚C

PA1800

FORWARD BIAS SAFE OPERATING AREA

	100
				V)	ID(pulse)		PW
			Limited						=
		DS(on)	10
			=
- A	10	R	GS							1	ms
		(@V			ID(DC)		10
								ms
Current
						100
							ms
	1
						DC
ID - Drain
	0.1
		TA = 25˚C

Single Pulse Mounted on Ceramic

0.01 Substrate of 50cm2 x 1.1 mm

0.1	1	10	100
	VDS - Drain to Source Voltage - V

TRANSFER CHARACTERISTICS

	100	VDS = 10 V
	10
- A
Current	1		TA = 125˚C
	0.1
- Drain
			75˚C
	0.01
ID
						25˚C
	0.001					− 25˚C
	0.0001	0.5			2
	0		1	1.5		2.5	3
		VGS - Gate to Source Voltage - V

FORWARD TRANSFER ADMMITTANCE vs.

DRAIN CURRENT

	100
S	VDS = 10 V
-
Admittance	10		TA = − 25˚C
Transfer			25˚C
	1		75˚C
Forward-|yfs			125˚C
	0.1
|	0.01
	0.001	0.01	0.1	1	10	100
			ID - Drain Current - A

Data Sheet D11407EJ1V0DS00

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