DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PA1800
µµµµ
DESCRIPTION
The µPA1800 is a switching device which can be
driven directly by a 4.0-V power source.
The µPA1800 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Can be driven by a 4.0-V power source
•
Low on-state resistance
•
DS(on)1
= 27 mΩ MAX. (VGS = 10 V, ID = 3.0 A)
R
DS(on)2
R
= 39 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
DS(on)3
R
= 45 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
PA1800GR-9JG Power TSSOP8
µ
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation
Note1
Note2
Channel Temperature T
Storage Temperature T
DSS
GSS
D(DC)
D(pulse)
I
P
ch
stg
T
85
14
3.15 ±0.15
3.0 ±0.1
0.65
0.27
30 V
20 V
±
5.0 A
±
20 A
±
2.0 W
150 °C
–55 to +150 °C
PACKAGE DRAWING (Unit : mm)
+0.03
–0.08
0.8 MAX.
1, 5, 8 :Drain
2, 3, 6, 7: Source
4 :Gate
±0.055
0.145
0.10 M
1.2 MAX.
1.0±0.05
0.1±0.05
6.4 ±0.2
4.4 ±0.1
+5°
3°
–3°
EQUIVALENT CIRCUIT
Drain
Gate
Gate
Protection
Diode
Source
0.5
0.6
1.0 ±0.2
Body
Diode
0.25
+0.15
–0.1
0.1
Notes 1.
Remark
PW ≤ 10 µs, Duty Cycle ≤ 1 %
2.
Mounted on ceramic substrate of 50 cm
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11407EJ1V0DS00 (1st edition)
Date Published February 2000 NS CP(K)
Printed in Japan
2
x 1.1 mm
The mark ★ shows major revised points .
©
1999, 2000
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
★
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
µµµµ
PA1800
Zero Gate Voltage Drain Current I
Gate Leakage Current I
Gate Cut-off Voltage V
DSS
VDS = 30 V, VGS = 0 V10
GSS
VGS = ±20 V, VDS = 0 V±10
GS(off)VDS
= 10 V, ID = 1 mA 1.0 1.41 2.0 V
A
µ
A
µ
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 3.0 A3.07.0S
Drain to Source On-state Resi stance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
DS(on)1VGS
DS(on)2VGS
R
DS(on)3VGS
R
iss
oss
rss
d(on)
r
d(off)
f
G
GS
GD
F(S-D)IF
rr
rr
= 10 V, ID = 3.0 A2027m
= 4.5 V, ID = 3.0 A2939m
= 4.0 V, ID = 3.0 A3245m
Ω
Ω
Ω
VDS = 10 V 680 pF
VGS = 0 V 470 pF
f = 1 MHz 170 pF
VDD = 15 V18ns
ID = 3.0 A70ns
GS(on)
V
= 10 V60ns
RG = 10
Ω
26 ns
VDD = 24 V23nC
ID = 5.0 A2nC
VGS = 10 V7nC
= 5.0 A, VGS = 0 V0.74V
IF = 5.0 A, VGS = 0 V
di/dt = 100 A/
s
µ
60 ns
80 nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
R
L
R
PG.
V
GS
0
τ = 1 s
µ
Duty Cycle ≤ 1 %
G
V
DD
τ
GS
V
Wave Form
I
D
Wave Form
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
V
GS
10 %
0
0
10 %
t
d(on)
90 %
t
on
t
r
I
D
90 %
V
GS
(on)
PG.
90 %
I
D
t
d(off)
10 %
t
f
t
off
IG = 2 mA
50 Ω
R
L
V
DD
2
Data Sheet D11407EJ1V0DS00
µµµµ
PA1800
TYPICAL CHARACTERISTICS (TA = 25
★
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
0
30
60
TA - Ambient Temperature -
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
Pulsed
V
GS
15
= 4.5 V
10
V
GS
- Drain Current - A
D
I
= 2.5 V
5
90
V
GS
120
˚C
= 4.0 V
C)
°°°°
FORWARD BIAS SAFE OPERATING AREA
100
150
V)
Limited
10
=
DS(on)
R
GS
10
(@V
1
- Drain Current - A
D
I
0.1
TA = 25˚C
Single Pulse
Mounted on Ceramic
Substrate of 50cm x 1.1 mm
0.01
0.1
DS
V
ID(pulse)
I
D(DC)
2
1
- Drain to Source Voltage - V
PW
=
1 ms
10
ms
100 ms
DC
10 100
TRANSFER CHARACTERISTICS
100
V
DS
= 10 V
10
1
= 125˚C
A
T
0.1
75˚C
- Drain Current - A
0.01
D
I
0.001
25˚C
−25˚C
0
0
0.2
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.0
VDS = 10 V
I
D
= 1 mA
1.5
1.0
- Gate to Source Cut-off Voltage - V
GS(off)
V
0.5
−50
T
ch
- Channel Temperature - ˚C
50 1000
0.8 1.00.4 0.6
0.0001
0.5
0
1 1.5
GS
- Gate to Source Voltage - V
V
2
2.5 3
FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT
100
DS
= 10 V
V
TA = −25
25
˚C
125
75
˚C
˚C
˚C
10
1
0.1
| - Forward Transfer Admittance - S
fs
| y
150
0.01
0.001
1 10 1000.01 0.1
ID - Drain Current - A
Data Sheet D11407EJ1V0DS00
3
µµµµ
PA1800
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
GS
= 4.0 V
V
50
TA = 125˚C
40
30
75˚C
25˚C
−
25˚C
20
- Drain to Source On-State Resistance - mΩ
10
DS(on)
R
0.1
1
I
D
- Drain Current - A
10 100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
GS
= 10 V
V
40
30
20
TA = 125˚C
75˚C
25˚C
−
25˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
GS
= 4.5 V
V
50
TA = 125˚C
40
75˚C
30
25˚C
−
25˚C
20
- Drain to Source On-State Resistance - mΩ
10
DS(on)
R
0.1
1
I
D
- Drain Current - A
10 100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
ID = 3.0 A
50
40
VGS = 4.0 V
4.5 V
30
10 V
20
10
- Drain to Source On-State Resistance - mΩ
DS(on)
R
0
0.1
1
I
D
- Drain Current - A
10 100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
60
ID = 3.0 A
50
40
30
20
10
- Drain to Source On-state Resistance - mΩ
0
DS (on)
0 5 10 15 20
R
VGS - Gate to Source Voltage - V
10
- Drain to Source On-state Resistance - mΩ
0
DS(on)
−50
R
T
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
1000
- Capacitance - pF
rss
, C
100
oss
, C
iss
C
10
0.1
DS
V
0 50 100 150
ch
- Channel Temperature -˚C
f = 1 MHz
VGS = 0 V
C
iss
C
oss
C
rss
1 10 100
- Drain to Source Voltage - V
4
Data Sheet D11407EJ1V0DS00
µµµµ
PA1800
SWITCHING CHARACTERISTICS
1000
V
V
R
DD
GS(on)
G
= 15 V
= 10 V
= 10 Ω
100
- Swwitchig Time - ns
f
10
, t
d(off)
, t
r
, t
d(on)
t
1
0.01 0.1 1 10
I
D
- Drain Current - A
DYNAMIC INPUT CHARACTERISTICS
12
ID = 5.0 A
10
V
DD
= 12 V
V
DD
= 18 V
8
V
DD
= 24 V
6
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
V
GS
= 0 V
t
r
t
d(off)
t
f
t
d(on)
1
0.1
0.01
0.001
- Source to Drain Current - A
F
I
0.0001
0.2 0.4 0.6 0.8 1
V
F(S-D)
- Source to Drain Voltage - V
4
- Gate to Source Voltage - V
2
GS
V
0
0 4 8 12 16 20 24
QG - Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Mounted on ceramic
substrate of
Single Pulse
50 cm2 x 1.1 mm
100
10
1
- Transient Thermal Resistance - ˚C/W
th(ch-A)
r
0.1
0.010.001
0.1
110
62.5˚C/W
1000100
PW - Pulse Width - s
Data Sheet D11407EJ1V0DS00
5
[MEMO]
µµµµ
PA1800
6
Data Sheet D11407EJ1V0DS00
[MEMO]
µµµµ
PA1800
Data Sheet D11407EJ1V0DS00
7
µµµµ
PA1800
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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