NEC UPA1800GR-9JG Datasheet

DATA SHEET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PA1800
µµµµ
DESCRIPTION
The µPA1800 is a switching device which can be driven directly by a 4.0-V power source. The µPA1800 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
FEATURES
Can be driven by a 4.0-V power source
Low on-state resistance
DS(on)1
= 27 mΩ MAX. (VGS = 10 V, ID = 3.0 A)
R
DS(on)2
R
= 39 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
DS(on)3
R
= 45 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
PA1800GR-9JG Power TSSOP8
µ
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage V Gate to Source Voltage V Drain Current (DC) I Drain Current (pulse) Total Power Dissipation
Note1
Note2
Channel Temperature T Storage Temperature T
DSS
GSS
D(DC)
D(pulse)
I
P
ch
stg
T
85
14
3.15 ±0.15
3.0 ±0.1
0.65
0.27
30 V
20 V
±
5.0 A
±
20 A
±
2.0 W
150 °C
–55 to +150 °C
PACKAGE DRAWING (Unit : mm)
+0.03 –0.08
0.8 MAX.
1, 5, 8 :Drain 2, 3, 6, 7: Source 4 :Gate
±0.055
0.145
0.10 M
1.2 MAX.
1.0±0.05
0.1±0.05
6.4 ±0.2
4.4 ±0.1
+5°
3°
–3°
EQUIVALENT CIRCUIT
Drain
Gate
Gate Protection Diode
Source
0.5
0.6
1.0 ±0.2
Body Diode
0.25
+0.15 –0.1
0.1
Notes 1.
Remark
PW ≤ 10 µs, Duty Cycle ≤ 1 %
2.
Mounted on ceramic substrate of 50 cm
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D11407EJ1V0DS00 (1st edition) Date Published February 2000 NS CP(K) Printed in Japan
2
x 1.1 mm
The mark ★ shows major revised points .
©
1999, 2000
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
µµµµ
PA1800
Zero Gate Voltage Drain Current I Gate Leakage Current I Gate Cut-off Voltage V
DSS
VDS = 30 V, VGS = 0 V10
GSS
VGS = ±20 V, VDS = 0 V±10
GS(off)VDS
= 10 V, ID = 1 mA 1.0 1.41 2.0 V
A
µ
A
µ
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 3.0 A3.07.0S Drain to Source On-state Resi stance R
Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Turn-on Delay Time t Rise Time t Turn-off Delay Time t Fall Time t Total Gate Charge Q Gate to Source Charge Q Gate to Drain Charge Q Diode Forward Voltage V Reverse Recovery Time t Reverse Recovery Charge Q
DS(on)1VGS
DS(on)2VGS
R
DS(on)3VGS
R
iss
oss
rss
d(on)
r
d(off)
f
G
GS
GD
F(S-D)IF
rr
rr
= 10 V, ID = 3.0 A2027m = 4.5 V, ID = 3.0 A2939m = 4.0 V, ID = 3.0 A3245m
Ω Ω Ω
VDS = 10 V 680 pF VGS = 0 V 470 pF f = 1 MHz 170 pF VDD = 15 V18ns ID = 3.0 A70ns
GS(on)
V
= 10 V60ns
RG = 10
26 ns VDD = 24 V23nC ID = 5.0 A2nC VGS = 10 V7nC
= 5.0 A, VGS = 0 V0.74V
IF = 5.0 A, VGS = 0 V di/dt = 100 A/
s
µ
60 ns
80 nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
R
L
R
PG.
V
GS
0
τ = 1 s
µ
Duty Cycle 1 %
G
V
DD
τ
GS
V
Wave Form
I
D
Wave Form
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
V
GS
10 %
0
0
10 %
t
d(on)
90 %
t
on
t
r
I
D
90 %
V
GS
(on)
PG.
90 %
I
D
t
d(off)
10 %
t
f
t
off
IG = 2 mA
50
R
L
V
DD
2
Data Sheet D11407EJ1V0DS00
µµµµ
PA1800
TYPICAL CHARACTERISTICS (TA = 25
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
0
30
60
TA - Ambient Temperature -
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
20
Pulsed
V
GS
15
= 4.5 V
10
V
GS
- Drain Current - A
D
I
= 2.5 V
5
90
V
GS
120
˚C
= 4.0 V
C)
°°°°
FORWARD BIAS SAFE OPERATING AREA
100
150
V)
Limited
10
=
DS(on)
R
GS
10
(@V
1
- Drain Current - A
D
I
0.1
TA = 25˚C Single Pulse Mounted on Ceramic Substrate of 50cm x 1.1 mm
0.01
0.1
DS
V
ID(pulse)
I
D(DC)
2
1
- Drain to Source Voltage - V
PW
=
1 ms
10
ms
100 ms
DC
10 100
TRANSFER CHARACTERISTICS
100
V
DS
= 10 V
10
1
= 125˚C
A
T
0.1
75˚C
- Drain Current - A
0.01
D
I
0.001
25˚C
25˚C
0
0
0.2
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
2.0 VDS = 10 V
I
D
= 1 mA
1.5
1.0
- Gate to Source Cut-off Voltage - V
GS(off)
V
0.5
50 T
ch
- Channel Temperature - ˚C
50 1000
0.8 1.00.4 0.6
0.0001
0.5
0
1 1.5
GS
- Gate to Source Voltage - V
V
2
2.5 3
FORWARD TRANSFER ADMMITTANCE vs. DRAIN CURRENT
100
DS
= 10 V
V
TA = 25
25
˚C
125
75
˚C
˚C
˚C
10
1
0.1
| - Forward Transfer Admittance - S
fs
| y
150
0.01
0.001
1 10 1000.01 0.1
ID - Drain Current - A
Data Sheet D11407EJ1V0DS00
3
µµµµ
PA1800
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
60
GS
= 4.0 V
V
50
TA = 125˚C
40
30
75˚C
25˚C
25˚C
20
- Drain to Source On-State Resistance - m
10
DS(on)
R
0.1
1
I
D
- Drain Current - A
10 100
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
50
GS
= 10 V
V
40
30
20
TA = 125˚C
75˚C 25˚C
25˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
60
GS
= 4.5 V
V
50
TA = 125˚C
40
75˚C
30
25˚C
25˚C
20
- Drain to Source On-State Resistance - m
10
DS(on)
R
0.1
1
I
D
- Drain Current - A
10 100
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
60
ID = 3.0 A
50
40
VGS = 4.0 V
4.5 V
30
10 V
20
10
- Drain to Source On-State Resistance - m
DS(on)
R
0
0.1
1
I
D
- Drain Current - A
10 100
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
60
ID = 3.0 A
50
40
30
20
10
- Drain to Source On-state Resistance - m
0
DS (on)
0 5 10 15 20
R
VGS - Gate to Source Voltage - V
10
- Drain to Source On-state Resistance - m
0
DS(on)
50
R
T
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
- Capacitance - pF
rss
, C
100
oss
, C
iss
C
10
0.1
DS
V
0 50 100 150
ch
- Channel Temperature -˚C
f = 1 MHz VGS = 0 V
C
iss
C
oss
C
rss
1 10 100
- Drain to Source Voltage - V
4
Data Sheet D11407EJ1V0DS00
µµµµ
PA1800
SWITCHING CHARACTERISTICS
1000
V V
R
DD GS(on)
G
= 15 V
= 10 V
= 10
100
- Swwitchig Time - ns
f
10
, t
d(off)
, t
r
, t
d(on)
t
1
0.01 0.1 1 10 I
D
- Drain Current - A
DYNAMIC INPUT CHARACTERISTICS
12
ID = 5.0 A
10
V
DD
= 12 V
V
DD
= 18 V
8
V
DD
= 24 V
6
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
V
GS
= 0 V
t
r
t
d(off)
t
f
t
d(on)
1
0.1
0.01
0.001
- Source to Drain Current - A
F
I
0.0001
0.2 0.4 0.6 0.8 1 V
F(S-D)
- Source to Drain Voltage - V
4
- Gate to Source Voltage - V
2
GS
V
0
0 4 8 12 16 20 24
QG - Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Mounted on ceramic substrate of Single Pulse
50 cm2 x 1.1 mm
100
10
1
- Transient Thermal Resistance - ˚C/W
th(ch-A)
r
0.1
0.010.001
0.1
110
62.5˚C/W
1000100
PW - Pulse Width - s
Data Sheet D11407EJ1V0DS00
5
[MEMO]
µµµµ
PA1800
6
Data Sheet D11407EJ1V0DS00
[MEMO]
µµµµ
PA1800
Data Sheet D11407EJ1V0DS00
7
µµµµ
PA1800
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.
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M7 98. 8
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