NEC UPC2771TB-E3, UPC2771TB, UPC2771T-E3, UPC2771T, UPC2763TB-E3 Datasheet

DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUITS

μPC2762TB,μPC2763TB,μPC2771TB

3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION

The μPC2762TB, μPC2763TB and μPC2771TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. Each of the ICs is packaged in super minimold package which is smaller than conventional minimold. The μPC2762TB, μPC2763TB and μPC2771TB have compatible pin connections and performance to

μPC2762T, μPC2763T and μPC2771T of conventional minimold version. So, in the case of reducing your system size, μPC2762TB, μPC2763TB and μPC2771TB are suitable to replace from μPC2762T, μPC2763T and μPC2771T.

These IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

•	High-density surface mounting :		6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
•	Supply voltage	: VCC = 2.7 to 3.3 V
•	Medium output power	: μPC2762TB: PO(1 dB) = +8.0 dBm TYP. @ 0.9 GHz
			μPC2763TB: PO(1 dB) = +9.5 dBm TYP. @ 0.9 GHz
			μPC2771TB: PO(1 dB) = +11.5 dBm TYP. @ 0.9 GHz
•	Power gain	: μPC2762TB: GP = 13 dB TYP. @ 0.9 GHz
			μPC2763TB: GP = 20 dB TYP. @ 0.9 GHz
			μPC2771TB: GP = 21 dB TYP. @ 0.9 GHz

APPLICATIONS

• Buffer amplifiers for mobile telephones : μPC2762TB, μPC2763TB

	• PA driver for PDC800M	: μPC2771TB
	ORDERING INFORMATION
	Part Number	Package	Marking	Supplying Form
	μPC2762TB-E3		C1Z	Embossed tape 8 mm wide.
				1, 2, 3 pins face to perforation side of the tape.
	μPC2763TB-E3	6-pin super minimold	C2A
				Qty 3 kp/reel.
	μPC2771TB-E3		C2H

Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: μPC2762TB, μPB2763TB, μPC2771TB)

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. P12710EJ2V0DS00 (2nd edition)

The mark shows major revised points.

©

1997, 1999

Date Published June 1999 N CP(K)

Printed in Japan

μPC2762TB, μPC2763TB, μPC2771TB

PIN CONNECTIONS

	(Top View)				(Bottom View)
	1Z
3		4		4
2		5		5
	C
1		6		6

Marking is an example of μPC2762TB

			Pin No.	Pin Name
	3		1	INPUT
			2	GND
	2
			3	GND
	1
			4	OUTPUT
			5	GND
			6	VCC

PRODUCT LINE-UP (TA = +25 °C, V CC = Vout = 3.0 V, ZL = ZS = 50 Ω)

	Part No.	fu	PO (1 dB)	PO (sat)	GP	ICC	Package	Marking
		(GHz)	(dBm)	(dBm)	(dB)	(mA)
	μPC2762T	2.9	+8.0	+9.0	13	26.5	6-pin minimold	C1Z
	μPC2762TB						6-pin super minimold
	μPC2763T	2.7	+9.5	+11.0	20	27.0	6-pin minimold	C2A
	μPC2763TB						6-pin super minimold
	μPC2771T	2.2	+11.5	+12.5	21	36.0	6-pin minimold	C2H
	μPC2771TB						6-pin super minimold

Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.

Notice The package size distinguishes between minimold and super minimold.

2	Data Sheet P12710EJ2V0DS00

	μPC2762TB, μPC2763TB, μPC2771TB
SYSTEM APPLICATION EXAMPLE
Digital cellular telephone
RX	DEMO	I
		Q

	N	PLL
SW		PLL
		I
		0 °
TX		Phase
		shifter
PA	μ PC2762TB	90 °
		Q
	or

μPC2763TB

μPC2771TB

Note The insertion point is different due to the specifications of conjunct devices.

For conjunction with your devices, refer to the data sheets to confirm their conbination.

Data Sheet P12710EJ2V0DS00

3

μPC2762TB, μPC2763TB, μPC2771TB

PIN EXPLANATION

Pin

Applied

Pin

Pin Name

Voltage

Voltage

Function and Applications

Internal Equivalent Circuit

No.

(V)

(V)Note

1

INPUT

–

1.31

Signal input pin. A internal

matching circuit, configured with

resistors, enables 50 Ω

connection over a wide band.

1.01

A multi-feedback circuit is

designed to cancel the

deviations of hFE and resistance.

6

0.97

This pin must be coupled to

signal source with capacitor for

DC cut.

4

OUTPUT

Voltage

–

Signal output pin. The inductor

4

as same

must be attached between VCC

as VCC

and output pins to supply

1

through

current to the internal output

external

transistors.

inductor

*

6

VCC

2.7 to 3.3

–

Power supply pin, which biases

the internal input transistor.

This pin should be externally

equipped with bypass capacitor

3

2

5

to minimize its impedance.

GND

GND

2

GND

0

–

Ground pin. This pin should be

3

connected to system ground

* μPC2762TB does not have

5

with minimum inductance.

this capacitance.

Ground pattern on the board

should be formed as wide as

possible.

All the ground pins must be

connected together with wide

ground pattern to decrease

impedance difference.

Note Pin voltage is measured at VCC = 3.0 V. Above: μPC2762TB, Center: μPC2763TB, Below: μPC2771TB.

4	Data Sheet P12710EJ2V0DS00

μPC2762TB, μPC2763TB, μPC2771TB

ABSOLUTE MAXIMUM RATINGS

				Ratings
Parameter	Symbol		Conditions					Unit
				μPC2762TB		μPC2771TB
				μPC2763TB
Supply Voltage	VCC	TA = +25	°C, pin 4 and 6		3.6			V
Total Circuit Current	ICC	TA = +25	°C	70			77.7	mA
Power Dissipation	PD	Mounted on double copper clad			200			mW
		50 × 50 × 1.6 mm epoxy glass PWB
		TA = +85	°C
Operating Ambient	TA			−40 to +85				°C
Temperature
Storage Temperature	Tstg			−55 to +150				°C
Input Power	Pin	TA = +25	°C	+10			+13	dBm

RECOMMENDED OPERATING CONDITIONS

Parameter	Symbol	MIN.	TYP.	MAX.	Unit	Remark
Supply Voltage	VCC	2.7	3.0	3.3	V	Same voltage should be applied to pin
						4 and 6.
Operating Ambient	TA	−40	+25	+85	°C	−
Temperature
Operating Frequency	fopt	0.8	−	1.9	GHz	Only for μPC2771TB

Data Sheet P12710EJ2V0DS00

5

μPC2762TB, μPC2763TB, μPC2771TB

ELECTRICAL CHARACTERISTICS (TA = +25 °C, V CC = Vout = 3.0 V, ZL = ZS = 50 Ω)

μPC2762TB, μPC2763TB

Parameter

Symbol

Test Conditions

μPC2762TB

μPC2763TB

Unit

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

Circuit Current

ICC

No signal

−

26.5

35.0

−

27.0

35.0

mA

Power Gain

GP

f = 0.9 GHz

11

13

16

18

20

23

dB

f = 1.9 GHz

11.5

15.5

17.5

18

21

24

Noise Figure

NF

f = 0.9 GHz

−

6.5

8.0

−

5.5

7.0

dB

f = 1.9 GHz

−

7.0

9.0

−

5.5

7.5

Upper Limit Operating

fu

3 dB down below

2.7

2.9

−

2.3

2.7

−

GHz

Frequency

from gain at

f = 0.1 GHz

Isolation

ISL

f = 0.9 GHz

22

27

−

25

30

−

dB

f = 1.9 GHz

20

25

−

24

29

−

Input Return Loss

RLin

f = 0.9 GHz

6.0

9.0

−

8.0

11.0

−

dB

f = 1.9 GHz

5.5

8.5

−

8.0

11.0

−

Output Return Loss

RLout

f = 0.9 GHz

8.0

11.0

−

5.0

7.0

−

dB

f = 1.9 GHz

9.0

12.0

−

6.0

9.0

−

1 dB Gain Compres-

PO (1 dB)

f = 0.9 GHz

+5.5

+8.0

−

+7.0

+9.5

−

dBm

sion Output Level

f = 1.9 GHz

+4.5

+7.0

−

+4.0

+6.5

−

μPC2771TB

Parameter	Symbol	Test Conditions		μPC2771TB				Unit
			MIN.		TYP.		MAX.
Circuit Current	ICC	No signal	−		36.0		45.0	mA
Power Gain	GP	f = 0.9 GHz	19		21		24	dB
		f = 1.5 GHz	18		21		24
Noise Figure	NF	f = 0.9 GHz	−		6.0		7.5	dB
		f = 1.5 GHz	−		6.0		7.5
Upper Limit Operating	fu	3 dB down below from gain at f = 0.1 GHz	1.8		2.2		−	GHz
Frequency
Isolation	ISL	f = 0.9 GHz	25		30		−	dB
		f = 1.5 GHz	25		30		−
Input Return Loss	RLin	f = 0.9 GHz	10		14		−	dB
		f = 1.5 GHz	10		14		−
Output Return Loss	RLout	f = 0.9 GHz	6.5		9.0		−	dB
		f = 1.5 GHz	5.5		8.5		−
1 dB Gain Compres-	PO (1 dB)	f = 0.9 GHz	+9.0		+11.5		−	dBm
Sion Output Level		f = 1.5 GHz	+7.0		+9.5		−
Saturated Output	PO (sat)	f = 0.9 GHz	−		+12.5		−	dBm
Power Level		f = 1.5 GHz	−		+11		−

6	Data Sheet P12710EJ2V0DS00

μPC2762TB, μPC2763TB, μPC2771TB

STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25 °C, V CC = Vout = 3.0 V, ZL = ZS = 50 Ω)

μPC2762TB, μPC2763TB

Reference

Parameter

Symbol

Test Conditions

μPC2762TB

μPC2763TB

Unit

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

Saturated

PO (sat)

f = 0.9 GHz

−

+9.0

−

−

+11.0

−

dBm

Output Power

f = 1.9 GHz

−

+8.5

−

−

+8.0

−

Level

Adjacent channel

Padj

f = 0.9 GHz

f = ±50 kHz

−

−64

−

−

−61

−

dBc

power

π/4 QPSK waveNote

f = ±100 kHz

−

−64

−

−

−62

−

PO = +4 dBm

Third order

IM3

2 sine wave input.

f1 = 0.900 GHz

−

−16

−

−

−27

−

dBc

intermodulation

Output of each tone

f2 = 0.902 GHz

distortion

PO (each) = +4 dBm

f1 = 1.900 GHz

−

−10

−

−

−14

−

dBc

f2 = 1.902 GHz

μPC2771TB

						Reference
Parameter	Symbol		Test Conditions			μPC2771TB				Unit
					MIN.		TYP.	MAX.
Adjacent channel	Padj1	f = 0.9 GHz		f = ±50 kHz	−		−61		−	dBc
power 1		π/4 QPSK waveNote		f = ±100 kHz	−		−72		−
		PO = +7 dBm
Adjacent channel	Padj2	f = 1.5 GHz		f = ±50 kHz	−		−59		−	dBc
power 2		π/4 QPSK waveNote		f = ±100 kHz	−		−71		−
		PO = +7 dBm
Third order	IM3	2 sine wave input.		f1 = 0.900 GHz	−		−18		−	dBc
intermodulation		Output of each tone		f2 = 0.902 GHz
distortion		PO (each) = +7 dBm
				f1 = 1.500 GHz	−		−12		−	dBc
				f2 = 1.502 GHz

Note π/4 DQPSK modulated wave input, data rate 42 kbps, Filter roll off α = 0.5, PN 9

Data Sheet P12710EJ2V0DS00

7

μPC2762TB, μPC2763TB, μPC2771TB

TEST CIRCUIT

VCC

		1 000 pF
		C3
		6	L
50 Ω	C1	4	C2	50 Ω
IN	1			OUT
	1 000 pF		1 000 pF
		2, 3, 5

COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS

	Type	Value
C1, C2	Bias Tee	1 000 pF
C3	Capacitor	1 000 pF
L	Bias Tee	1 000 nH

EXAMPLE OF ACTUAL APPLICATION COMPONENTS

	Type	Value	Operating Frequency
C1 to C3	Chip capacitor	1 000 pF	100 MHz or higher
L	Chip inductor	100 nH	100 MHz or higher
		10 nH	2.0 GHz or higher

INDUCTOR FOR THE OUTPUT PIN

The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect an inductor between the Vcc pin (pin 6) and output pin (pin 4). Select large value inductance, as listed above.

The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor make output-port-impedance higher to get enough gain. In this case, large inductance and Q is suitable.

For above reason, select an inductance of 100 Ω or over impedance in the operating frequency. The gain is a peak in the operating frequency band, and suppressed at lower frequencies.

The recommendable inductance can be chosen from example of actual application components list as shown above.

CAPACITORS FOR THE VCC, INPUT, AND OUTPUT PINS

Capacitors of 1 000 pF are recommendable as the bypass capacitor for the Vcc pin and the coupling capacitors for the input and output pins.

The bypass capacitor connected to the Vcc pin is used to minimize ground impedance of Vcc pin. So, stable bias can be supplied against Vcc fluctuation.

The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC.

To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, C = 1/(2πRfc).

8	Data Sheet P12710EJ2V0DS00

μPC2762TB, μPC2763TB, μPC2771TB

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD

									AMP-2
	Top View
	2	3						IN	OUT
1
			C1Z				→	C	C
						4
					5				L
				6
Mounting direction
(Marking is an example for			PC2762TB)
									VCC
									C
COMPONENT LIST								Notes

	Value
C	1 000 pF
L	Example: 10 nH

1.30 × 30 × 0.4 mm double sided copper clad polyimide board.

2.Back side: GND pattern

3.Solder plated on pattern

4.: Through holes

For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATION OF SILICON MEDIUM-POWER HIGH-FREQUENCY AMPLIFIER MMIC (P12152E).

Data Sheet P12710EJ2V0DS00

9