DATA SHEET
MOS FIELD EFFECT TRANSISTOR
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PA1853
µµµµ
DESCRIPTION
The µPA1853 is a switching device which can be
driven directly by a 4
The
PA1853 features a low on-state resistance and
µ
-
V power source.
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Can be driven by a 4-V power source
•
Low on-state resistance
•
DS(on)1
R
= 85 mΩ MAX. (VGS = –10 V, ID = –1.5 A)
★
★
DS(on)2
R
= 152 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
DS(on)3
R
= 180 mΩ MAX. (VGS = –4.0 V, ID = –1.5 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
PA1853GR-9JG Power TSSOP8
µ
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation
Note1
Note2
Channel Temperature T
Storage Temperature T
Notes 1.
PW ≤ 10
2.
Mounted on ceramic substrate of 5000
s, Duty Cycle ≤ 1 %
µ
DSS
GSS
D(DC)
D(pulse)
I
P
ch
stg
–20/+5 V
T
–55 to +150 °C
–30 V
# 2.5
# 10
2.0 W
150 °C
mm2 x 1.1 mm
PACKAGE DRAWING (Unit : mm)
85
14
3.15 ±0.15
3.0 ±0.1
0.65
+0.03
0.27
–0.08
A
A
Gate1
Gate
Protection
Diode
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
±0.055
0.145
0.8 MAX.
0.10 M
EQUIVALENT CIRCUIT
Drain1
Body
Diode
Source1
1.2 MAX.
1.0±0.05
3°
0.1±0.05
6.4 ±0.2
4.4 ±0.1
Gate2
Gate
Protection
Diode
+5°
–3°
0.5
0.6
Drain2
Source2
0.25
+0.15
–0.1
1.0 ±0.2
0.1
Body
Diode
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D12968EJ1V0DS00 (1st edition)
Date Published October 1999 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
©
1997, 1999
★
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
µµµµ
PA1853
Drain Cut-off Current I
Gate Leakage Current I
Gate Cut-off Voltage V
DSS
VDS = –30 V, VGS = 0 V –10
VGS = #20 V, VDS = 0 V
GSS
GS(off)VDS
µ
10
µ
#
= –10 V, ID = –1 mA –1.0 –1.7 –2.5 V
A
A
Forward Transfer Admittance | yfs |VDS = –10 V, ID = –1.5 A13.6S
Drain to Source On-state Resi stance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Diode Forward Voltage V
DS(on)1VGS
DS(on)2VGS
R
DS(on)3VGS
R
iss
oss
rss
d(on)
r
d(off)
f
G
GS
GD
F(S-D)IF
= –10 V, ID = –1.5 A6485m
= –4.5 V, ID = –1.5 A 114 152 m
= –4.0 V, ID = –1.5 A 135 180 m
Ω
Ω
Ω
VDS = –10 V 520 pF
VGS = 0 V 200 pF
f = 1 MHz 82 pF
VDD = –10 V60ns
ID = –1.5 A 220 ns
GS(on)
V
= –10 V 800 ns
RG = 10
Ω
620 ns
VDD = –24 V12nC
ID = –2.5 A 2 nC
VGS = –10 V 3 nC
= 2.5 A, VGS = 0 V0.73V
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
IG = 2 mA
50 Ω
D.U.T.
R
L
V
DD
PG.
V
GS
RG = 10 Ω
0
τ
τ = 1 s
µ
Duty Cycle ≤ 1 %
R
G
D.U.T.
V
L
R
V
Wave Form
V
DD
I
D
Wave Form
GS
GS
0
10 %
V
GS(on)
90 %
PG.
0
10 %
t
d(on)
90 %
t
on
90 %
I
D
t
r
t
d(off)
10 %
t
f
t
off
D
I
2
Data Sheet D12968EJ1V0DS00
★
TYPICAL CHARACTERISTICS (TA = 25°C)
µµµµ
PA1853
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
0
30
TA - Ambient Temperature -
−10
Pulsed
−8
−6
−4
- Drain Current - A
D
I
−2
60
90
120
˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
= −10 V
− 4.5 V
−4.0 V
150
FORWARD BIAS SAFE OPERATING AREA
−100
−10
R
DS(on)
(@V
Limited
−10
=
GS
−1
- Drain Current - A
D
I
−0.1
Single Pulse
Mounted on Ceramic
Substrate of 5000mm x 1.1mm
D
(FET1) : PD(FET2) = 1:1
P
−0.01
−0.1
V
DS
−10
TRANSFER CHARACTERISTICS
VDS = −10 V
−1
−0.1
−0.01
- Drain Current - A
D
I
−0.001
I
D
(pulse)
V)
I
D
(
DC
)
2
−1.0
PW
10
ms
100 ms
DC
−10.0 −100.0
- Drain to Source Voltage - V
= 125 ˚C
A
T
75 ˚C
25 ˚C
˚C
−25
=
1
ms
0
−0.20
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
−0.4
V
DS
- Drain to Source Voltage - V
−0.6
−2
−1.8
−1.6
−1.4
−1.2
- Gate to Source Cut-off Voltage - V
GS(off)
−1
V
−50
ch
- Channel Temperature - ˚C
T
50 1000
−0.8 −1
V
DS
= −10 V
I
D
= −1 mA
150
−0.0001
0
−1.0 −2.0
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT
100
10
1
| - Forward Transfer Admittance - S
fs
| y
0.1
−0.1
ID - Drain Current - A
−3.0
V
TA = −25 ˚C
25 ˚C
75 ˚C
125 ˚C
−10 −100−1
DS
= −10 V
−4.0
Data Sheet D12968EJ1V0DS00
3
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