NEC UPA573T Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µ

P-CHANNEL MOS FET (5-PIN 2 CIRCUITS)

FOR SWITCHING

PA573T

The µPA573T is a super-mini-mold device provided with
two MOS FET circuits. It achieves high-density mounting
and saves mounting costs.

FEATURES

• Two source common MOS FET circuits in package the

same size as SC-70

• Directly driven by ICs having a 3 V power supply

• Automatic mounting supported

PACKAGE DIMENSIONS (in millimeters)

2.1 ±0.1

1.25 ±0.1

+0.1

0.2

–0

0.65 0.65

1.3

2.0 ±0.2

0.15

0.9 ±0.1

+0.1
–0.05

0.7

0 to 0.1

EQUIVALENT CIRCUIT

5 4

PIN CONNECTION

(G1)

Gate 1

1 2 3

1. G

2.

3.

4.

5.
Marking: CB

Source
Gate 2
Drain 2
Drain 1

(common)
(G2)
(D2)
(D1)

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS RATINGS UNIT
Drain to Source Voltage VDSS VGS = 0 –30 V
Gate to Source Voltage VGSS VDS = 0 +7 V
Drain Current (DC) ID(DC) +100 mA
Drain Current (pulse) ID(pulse) PW ≤ 10 ms, Duty Cycle ≤ 50 % +200 mA
Total Power Dissipation PT 200 (Total) mW
Channel Temperature Tch 150 ˚C
Operating Temperature Topt –55 to +80 ˚C
Storage Temperature Tstg –55 to +150 ˚C

Document No. G11245EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan

©

1996

µ

PA573T

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-off Current IDSS VDS = –30 V, VGS = 0 –1.0
Gate Leakage Current IGSS VGS = +5 V, VDS = 0 +3.0
Gate Cut-off Voltage VGS(off) VDS = –3 V, ID = –10 µA –1.6 –1.9 –2.3 V
Forward Transfer Admittance |yfs|VDS = –3 V, ID = –10 mA 20 30 S
Drain to Source On-State Resistance
Drain to Source On-State Resistance

RDS(on)1 VGS = –2.5 V, ID = –1 mA 55 100 Ω

RDS(on)2 VGS = –4.0 V, ID = –10 mA 20 25 Ω
Input Capacitance Ciss VDS = –5.0 V, VGS = 0, f = 1 MHz 16 pF
Output Capacitance Coss 13 pF
Reverse Transfer Capacitance Crss 2pF
Turn-On Delay Time td(on) VDD = – 5 V, ID = –10 mA, VGS(on) = –5 V, 10 ns
Rise Time tr

RG = 10 Ω, RL = 500 Ω

40 ns
Turn-Off Delay Time td(off) 130 ns
Fall Time tf 80 ns

µ

A

µ

A

SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS

V

GS

R

PG.

0

V

GS

τ

τ = 1 s

µ

Duty Cycle ≤ 1 %

DUT

L

V

G

R

Gate
voltage
waveform

DD

I

D

Drain
current
waveform

10 %

V

GS(on)

90 %

d(on)

t

0

10 % 10 %

trt

I

D

d(off)

90 %

90 %

t

f

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

µ

PA573T

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

dT - Derating Factor - %

20

20 40 60 80 100 120 140 160 30 60 90 120 150 180

0

T

C - Case Temperature - ˚C

TRANSFER CHARACTERISTICS

–100

VDS = –3 V
Pulsed
measurement

–10

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

250

200

150

Total

100

50

PT - Total Power Dissipation - mW

0

A - Ambient Temperature - ˚C

T

GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE

–2.6

–2.2

Total power
dissipation

VDS = –3 V
ID = –10 A

µ

–1

–0.1

ID - Drain Current - mA

–0.01

–0.001

–1.0

–1.5 –2.0 –2.5 –3.0 –3.5 –4.0

GS - Gate to Source Voltage - V

V

FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT

VDS = –3 V
Pulsed

200

measurement

100

50

TA = –25 ˚C

20
10

5

TA = 150 ˚C
75 ˚C
25 ˚C
–25 ˚C

25 ˚C
75 ˚C
150 ˚C

–1.8

–1.4

VGS(off) - Gate Cut-off Voltage - V

–1.0

–50

0 50 100 150

ch - Channel Temperature - ˚C

T

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE

30

–10 mA

20

ID = –100 mA

Pulsed
measurement

2

|yfs| - Forward Transfer Admittance - mS

1

–1 –2 –5 –10 –20 –50 –100 –200

–0.5

I

D - Drain Current - mA

10

RDS(on) - Drain to Source On-State Resistance - Ω

–2

–3 –4 –5 –6 –7 –8

GS - Gate to Source Voltage - V

V

3

µ

PA573T

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT

100

V

GS

= –2.5 V
Pulsed
measurement

80

TA = –25 ˚C 25 ˚C

60

40

20

- Drain to Source On-State Resistance - Ω

DS(on)

R

0

–0.3

–0.5 –1 –2 –5 –10

D

- Drain Current - mA

I

CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE

40

20

10

75 ˚C

150 ˚C

VDS = –5 V
f = 1 MHz

C

C

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT

VGS = –4 V

100

Pulsed
measurement

80

60

–25 ˚C

25 ˚C

75 ˚C

- Drain to Source On-State Resistance - Ω

DS(on)

R

40

20

0

TA = 150 ˚C

–1

–2 –5 –10 –20 –60

D

- Drain Current - mA

I

SWITCHING CHARACTERISTICS

300

VDD = –5 V
V

GS

= –5 V

in

= 10 Ω

iss

oss

R

100

t

r

5

- Capacitance - pF

rss

, C

2

oss

, C

iss

1

C

0.5
–0.3

–1 –3 –10 –30

DS

- Drain to Source Voltage - V

V

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

–200
–100

GS

= 0 V

V
Pulsed
measurement

–30

–10

–3

–1

- Source to Drain Current - mA

SD

–0.3

I

–0.1

–0.4

–0.5 –0.6 –0.7 –0.8 –0.9 –1.0 –1.1 –1.2 –1.3

SD

- Source to Drain Voltage - V

V

50

- Switching Time - ns

f

, t

d(off)

, t

C

rss

r

, t

d(on)

t

10

–10

–20 –50 –100 –300

D

- Drain Current - mA

I

t
t

t

f

d(on)

d(off)

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

–100

–4.5 V

–4.0 V

–80

–60

–3.5 V

–40

- Drain Current - mA

D

I

–3.0 V

–20

VGS = –2.5 V

0

–1 –2 –3 –4 –5

DS

- Drain to Source Voltage - V

V

4

µ

PA573T

REFERENCE

Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E

5

µ

PA573T

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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard:Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11