NEC UPA1560H Datasheet
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DATA SHEET
COMPOUND FIELD EFFECT POWER TRANSISTOR
μ PA1560
N-CHANNEL POWER MOS FET ARRAY
SWITCHING
INDUSTRIAL USE
DESCRIPTION
The μPA1560 is N-Channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver.
FEATURES
∙Full mold package with 4 circuits
∙4 V driving is possible
∙Low on-state resistance
RDS(on)1 = 165 mΩ MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 200 mΩ MAX. (VGS = 4 V, ID = 1.5 A)
∙Low input capacitance Ciss = 600 pF TYP.
ORDERING INFORMATION
PART NUMBER |
PACKAGE |
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|
μ PA1560H |
10-pin SIP |
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|
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
PACKAGE DRAWING (Unit : mm)
|
26.8 MAX. |
|
4.0 |
10 |
|
|
|
2.5 |
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|
10 MIN. |
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|
2.54 |
1.4 |
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|
0.5±0.1 |
|
1.4 |
0.6±0.1 |
|
1 2 3 4 5 6 7 8 910
EQUIVALENT CIRCUIT
3 |
5 |
7 |
9 |
2 |
4 |
6 |
8 |
1 |
|
|
10 |
ELECTRODE CONNECTION
2, 4, 6, 8 |
: Gate |
3, 5, 7, 9 |
: Drain |
1, 10 |
: Source |
Drain to Source Voltage (VGS = 0 V) |
VDSS |
120 |
V |
Gate to Source Voltage (VDS = 0 V) |
VGSS(AC) |
±20 |
V |
Gate to Source Voltage (VDS = 0 V) |
VGSS(DC) |
+ 20, –10 |
V |
Drain Current (DC) |
ID(DC) |
±3.0 |
A |
Drain Current (pulse) Note1 |
ID(pulse) |
±12 |
A |
Total Power Dissipation (TC = 25°C) |
P T1 |
28 |
W |
Total Power Dissipation (TA = 25°C) |
P T2 |
3.7 |
W |
Channel Temperature |
Tch |
150 |
°C |
Storage Temperature |
Tstg |
–55 to + 150 |
°C |
Single Avalanche Current Note2 |
IAS |
3.0 |
A |
Single Avalanche Energy Note2 |
EAS |
0.9 |
mJ |
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, V DD = 60 V, RG = 25 Ω, VGS = 20 V →0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G14283EJ1V0DS00 (1st edition) Date Published April 1999 NS CP(K)
Printed in Japan
© 
1999
μ PA1560
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS |
SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Drain to Source On-state Resistance |
RDS(on)1 |
VGS = 10 V, ID = 1.5 A |
|
130 |
165 |
mΩ |
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RDS(on)2 |
VGS = 4.0 V, ID = 1.5 A |
|
145 |
200 |
mΩ |
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Gate to Source Cut-off Voltage |
VGS(off) |
VDS = 10 V, ID = 1.0 mA |
1.0 |
1.8 |
2.5 |
V |
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Forward Transfer Admittance |
| yfs | |
VDS = 10 V, ID = 1.5 A |
2 |
4.5 |
|
S |
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Drain Leakage Current |
IDSS |
VDS = 120 V, VGS = 0 V |
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10 |
μA |
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Gate to Source Leakage Current |
IGSS |
VGS = ±20 V, VDS = 0 V |
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±10 |
μA |
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Input Capacitance |
Ciss |
VDS = 10 V |
|
600 |
|
pF |
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Output Capacitance |
Coss |
VGS = 0 V |
|
160 |
|
pF |
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Reverse Transfer Capacitance |
Crss |
f = 1.0 MHz |
|
70 |
|
pF |
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Turn-on Delay Time |
td(on) |
ID = 1.5 A |
|
35 |
|
ns |
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Rise Time |
tr |
VGS(on) = 10 V |
|
80 |
|
ns |
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Turn-off Delay Time |
td(off) |
VDD = 60 V |
|
700 |
|
ns |
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RL = 30 Ω |
|
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Fall Time |
tf |
|
250 |
|
ns |
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Total Gate Charge |
QG |
ID = 3.0 A |
|
28 |
|
nC |
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Gate to Source Charge |
QGS |
VDD = 96 V |
|
2.5 |
|
nC |
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Gate to Drain Charge |
QGD |
VGS = 10 V |
|
9 |
|
nC |
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Body Diode Forward Voltage |
VF(S-D) |
IF = 3.0 A, VGS = 0 V |
|
0.9 |
|
V |
|
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Reverse Recovery Time |
trr |
IF = 3.0 A, VGS = 0 V |
|
160 |
|
ns |
|
|
di/dt = 50 A/ μs |
|
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Reverse Recovery Charge |
Qrr |
|
280 |
|
nC |
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TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME
D.U.T. |
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D.U.T. |
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RG = 25 Ω |
L |
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RL |
VGS |
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90 % |
PG |
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VGS |
10 % |
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VGS(on) |
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Wave Form |
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50 Ω |
VDD |
RG |
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0 |
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Ω |
VDD |
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VGS = 20 → 0 V |
PG. |
RG = 10 |
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ID |
90 % |
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90 % |
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BVDSS |
VGS |
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ID |
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ID |
0 10 % |
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10 % |
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IAS |
0 |
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Wave Form |
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ID |
VDS |
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td(on) |
tr |
td(off) |
tf |
τ |
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VDD |
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τ = 1μ s |
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ton |
|
toff |
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Duty Cycle ≤ 1 %
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
|
D.U.T. |
|
|
IG = 2 mA |
RL |
|
|
|
PG. |
50 Ω |
VDD |
2 |
Data Sheet G14283EJ1V0DS00 |