NEC UPA1434H Datasheet

DATA SHEET

SILICON TRANSISTOR ARRAY

μPA1434

NPN SILICON POWER TRANSISTOR ARRAY

LOW SPEED SWITCHING USE

INDUSTRIAL USE

DESCRIPTION

The μPA1434 is NPN silicon epitaxial Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on.

FEATURES

•Easy mount by 0.1 inch of terminal interval.

•High hFE. Low VCE(sat).

hFE = 800 to 3200 (at IC = 0.5 A) VCE(sat) = 0.5 V MAX. (at IC = 2 A)

ORDERING INFORMATION

Part Number	Package	Quality Grade
μPA1434H	10 Pin SIP	Standard

Please refer to “Quality grade on NEC Semiconductor Device” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.

ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)

Collector to Base Voltage	VCBO	60	V
Collector to Emitter Voltage	VCEO	60	V
Emitter to Base Voltage	VEBO	7	V
Collector Current (DC)	IC(DC)	3	A/unit
Collector Current (pulse)	IC(pulse)*	6	A/unit
Base Current (DC)	IB(DC)	0.6	A/unit
Total Power Dissipation	PT1**	3.5	W
(Ta = 25 ˚C)
Total Power Dissipation	PT2**	28	W
(Tc = 25 ˚C)
Junction Temperature	Tj	150	˚C
Storage Temperature	Tstg –55 to +150		˚C

*PW ≤ 300 μs, Duty Cycle ≤ 10 %

**4 Circuits

		PACKAGE DIMENSION
			(in millimeters)
		26.8 MAX.			4.0
	10
	2.5				10 MIN.
				2.54	1.4
	1.4	0.6 ±0.1			0.5 ±0.1
	1 2 3 4 5 6 7 8 910
		CONNECTION DIAGRAM
		3	5	7	9
	2	4	6		8
	1				10
			PIN NO.
		2, 4, 6, 8: Base (B)
		3, 5, 7, 9: Collector (C)
			1, 10: Emitter (E)

The information in this document is subject to change without notice.

Document No. IC-3480

Date Published September 1994 P

Printed in Japan

© 1994

μPA1434

ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)

CHARACTERISTIC	SYMBOL		MIN.	TYP.	MAX.	UNIT	TEST CONDITIONS
Collector Leakage Current	ICBO				10	μA	VCB = 60 V, IE = 0
Emitter Leakage Current	IEBO				10	μA	VEB = 5	V, IC = 0
DC Current Gain	hFE1	*	800		3200	—	VCE = 5	V, IC = 0.5 A
DC Current Gain	hFE2	*	500			—	VCE = 5	V, IC = 3 A
Collector Saturation Voltage	VCE(sat)	*			0.5	V	IC = 2 A, IB = 20 mA
Base Saturation Voltage	VBE(sat)	*			1.2	V	IC = 2 A, IB = 20 mA
Turn On Time	ton			1		μs	IC = 2 A
							IB1 = –IB2 = 10 mA
Storage Time	tstg			3		μs
							.	.	Ω
							VCC =. 50 V, RL =. 25
Fall Time	tf			1.5		μs
							See test circuit

* PW ≤ 350 μs, Duty Cycle ≤ 2 % /pulsed

SWITCHING TIME TEST CIRCUIT

		RL = 25 Ω
		IC	Base Current		IB1
VIN	IB1		Wave Form
					IB2
	IB2	T.U.T.	VCC = 50 V
				90 %
PW			Collector Current	10 %	IC
PW = 50 μs	VBB =	–5 V	Wave Form
Duty Cycle ≤ 2 %			ton	tstg	tf

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