Motorola H11G2, H11G1, H11G3 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by H11G1/D

			H11G1*
	GlobalOptoisolator		[CTR = 1000% Min]
			H11G2*
	6-Pin DIP Optoisolators
			[CTR = 1000% Min]
	Darlington	Output (On-Chip	Resistors)H11G3
			[CTR = 200% Min]

	The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs	*Motorola Preferred Devices
	optically coupled to silicon photodarlington detectors which have integral
	base±emitter resistors. The on±chip resistors improve higher temperature
	leakage characteristics. Designed with high isolation, high CTR, high voltage
	and low leakage, they provide excellent performance.	STYLE 1 PLASTIC
	• High CTR, H11G1 & H11G2 Ð 1000% (@ IF = 10 mA), 500% (@ IF = 1 mA)
	• High V(BR)CEO, H11G1 Ð 100 Volts, H11G2 Ð 80 Volts
	• To order devices that are tested and marked per VDE 0884 requirements, the
	suffix ºVº must be included at end of part number. VDE 0884 is a test option.	6
	Applications
		1
	• Interfacing and coupling systems of different potentials and impedances	STANDARD THRU HOLE
	• Phase and Feedback Controls	CASE 730A±04

•General Purpose Switching Circuits

•Solid State Relays

	MAXIMUM RATINGS (TA = 25°C unless otherwise noted)					SCHEMATIC
	Rating		Symbol	Value	Unit	1	6
	INPUT LED
	Reverse Voltage		VR	6	Volts	2	5
	Forward Current Ð Continuous		IF	60	mA
	Forward Current Ð Peak		IF	3	Amps	3	4
	Pulse Width = 300 μs, 2% Duty Cycle
	LED Power Dissipation @ TA = 25°C		PD	120	mW	PIN 1.	ANODE
	Derate above 25°C			1.41	mW/°C	2.	CATHODE
	OUTPUT DETECTOR					3.	N.C.
						4.	EMITTER
	Collector±Emitter Voltage	H11G1	VCEO	100	Volts
						5.	COLLECTOR
		H11G2		80		6.	BASE
		H11G3		55
	Emitter±Base Voltage		VEBO	7	Volts
	Collector Current Ð Continuous		IC	150	mA
	Detector Power Dissipation @ TA = 25°C		PD	150	mW
	Derate above 25°C			1.76	mW/°C

TOTAL DEVICE

Total Device Power Dissipation @ TA = 25°C	PD	250	mW
Derate above 25°C		2.94	mW/°C
Operating Junction Temperature Range(2)	T	± 55 to +100	°C
	A
Storage Temperature Range(2)	T	± 55 to +150	°C
	stg
Soldering Temperature (10 s)	TL	260	°C
Isolation Surge Voltage(1)	VISO	7500	Vac(pk)
(Peak ac Voltage, 60 Hz, 1 sec Duration)

1.Isolation surge voltage is an internal device dielectric breakdown rating.

1.For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

2.Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.

Preferred devices are Motorola recommended choices for future use and best overall value.

GlobalOptoisolator is a trademark of Motorola, Inc.

REV 1

Motorola, Inc. 1995

H11G1

H11G2

H11G3

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)(1)

A

Characteristic

Symbol

Min

Typ(1)

Max

Unit

INPUT LED

Reverse Leakage Current (VR = 3 V)

IR

Ð

0.05

10

μA

Forward Voltage IF = 10 mA)

VF

Ð

1.1

1.5

Volts

Capacitance (V = 0 V, f = 1 MHz)

CJ

Ð

18

Ð

pF

DARLINGTON OUTPUT (TA = 25°C and IF = 0 unless otherwise noted)

Collector±Emitter Breakdown Current

V(BR)CEO

Volts

(IC = 1 mA, IF = 0)

H11G1

100

Ð

Ð

H11G2

80

Ð

Ð

H11G3

55

Ð

Ð

Collector±Base Breakdown Voltage

V(BR)CBO

Volts

(IC = 100 μA, IF = 0)

H11G1

100

Ð

Ð

H11G2

80

Ð

Ð

H11G3

55

Ð

Ð

Emitter±Base Breakdown Voltage (IE = 100 μA, IF = 0)

V(BR)EBO

7

Ð

Ð

Volts

Collector±Emitter Dark Current

ICEO

(VCE = 80 V)

H11G1

Ð

Ð

100

nA

(VCE = 80 V, TA = 80°C)

H11G1

Ð

Ð

100

μA

(VCE = 60 V)

H11G2

Ð

Ð

100

nA

(VCE = 60 V, TA = 80°C)

H11G2

Ð

Ð

100

μA

(VCE = 30 V)

H11G3

Ð

Ð

100

nA

Capacitance (VCB = 10 V, f = 1 MHz)

CCB

Ð

6

Ð

pF

COUPLED (TA = 25°C unless otherwise noted)

Collector Output Current

IC (CTR)(2)

mA (%)

(VCE = 1 V, IF = 10 mA)

H11G1, 2

100 (1000)

Ð

Ð

(VCE = 5 V, IF = 1 mA)

H11G1, 2

5 (500)

Ð

Ð

(VCE = 5 V, IF = 1 mA)

H11G3

2 (200)

Ð

Ð

Collector±Emitter Saturation Voltage

VCE(sat)

Volts

(IF = 1 mA, IC = 1 mA)

H11G1, 2

Ð

0.75

1

(IF = 16 mA, IC = 50 mA)

H11G1, 2

Ð

0.85

1

(IF = 20 mA, IC = 50 mA)

H11G3

Ð

0.85

1.2

Isolation Surge Voltage(3,4) (60 Hz ac Peak, 1 Second)

VISO

7500

Ð

Ð

Vac(pk)

Isolation Resistance(3) (V = 500 Vdc)

Ð

1011

Ð

Ohms

Isolation Capacitance(3) (V = 0 V, f = 1 MHz)

CIO

Ð

2

Ð

pF

SWITCHING (TA = 25°C)

Turn±On Time

(I

F

= 10 mA, V

= 5 V, R

L

= 100 Ω,

ton

Ð

5

Ð

μs

CC

Turn±Off Time

Pulse Width p 300 μs, f = 30 Hz)

toff

Ð

100

Ð

1.Always design to the specified minimum/maximum electrical limits (where applicable).

2.Current Transfer Ratio (CTR) = IC/IF x 100%.

3.For this test, Pins 1 and 2 are common, and Photodarlington Pins 4 and 5 are common.

4.Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.

2	Motorola Optoelectronics Device Data