Motorola H11B1, H11B3 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by H11B1/D

GlobalOptoisolator	H11B1*
	[CTR = 500% Min]

	6-Pin DIP Optoisolators	H11B3
		[CTR = 100% Min]
	Darlington Output (Low Input Current)*Motorola Preferred Device

The H11B1 and H11B3 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applications requiring high output current (IC) at low LED input currents (IF).

•High Sensitivity to Low Input Drive Current (IF = 1 mA)

•To order devices that are tested and marked per VDE 0884 requirements, the suffix ºVº must be included at end of part number. VDE 0884 is a test option.

Applications

•Appliances, Measuring Instruments

•I/O Interfaces for Computers

•Programmable Controllers

•Interfacing and coupling systems of different potentials and impedances

•Solid State Relays

•Portable Electronics

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating	Symbol	Value	Unit
INPUT LED
Reverse Voltage	VR	3	Volts
Forward Current Ð Continuous	IF	60	mA
LED Power Dissipation @ TA = 25°C	PD	150	mW
with Negligible Power in Output Detector			mW/°C
Derate above 25°C		1.41
OUTPUT DETECTOR
Collector±Emitter Voltage	VCEO	25	Volts
Emitter±Base Voltage	VEBO	7	Volts
Collector±Base Voltage	VCBO	30	Volts
Collector Current Ð Continuous	IC	100	mA
Detector Power Dissipation @ TA = 25°C	PD	150	mW
with Negligible Power in Input LED			mW/°C
Derate above 25°C		1.76
TOTAL DEVICE
Isolation Surge Voltage(1)	V	7500	Vac(pk)
(Peak ac Voltage, 60 Hz, 1 sec Duration)	ISO
Total Device Power Dissipation @ TA = 25°C	PD	250	mW
Derate above 25°C		2.94	mW/°C
Ambient Operating Temperature Range(2)	T	± 55 to +100	°C
	A
Storage Temperature Range(2)	T	± 55 to +150	°C
	stg
Soldering Temperature (10 sec, 1/16″ from case)	TL	260	°C

1.Isolation surge voltage is an internal device dielectric breakdown rating.

1.For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

2.Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.

Preferred devices are Motorola recommended choices for future use and best overall value.

GlobalOptoisolator is a trademark of Motorola, Inc.

STYLE 1 PLASTIC

6

1

STANDARD THRU HOLE

CASE 730A±04

	SCHEMATIC
1		6
2		5
3	NC	4

PIN 1. LED ANODE

2.LED CATHODE

3.N.C.

4.EMITTER

5.COLLECTOR

6.BASE

REV 1

Motorola, Inc. 1995

H11B1

H11B3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)(1)

A

Characteristic

Symbol

Min

Typ(1)

Max

Unit

INPUT LED

Forward Voltage (IF = 10 mA)

H11B1

VF

Ð

1.15

1.5

Volts

Forward Voltage (IF = 50 mA)

H11B3

VF

Ð

1.34

1.5

Volts

Reverse Leakage Current (VR = 3 V)

IR

Ð

Ð

10

μA

Capacitance (V = 0 V, f = 1 MHz)

CJ

Ð

18

Ð

pF

OUTPUT DETECTOR

Collector±Emitter Dark Current (VCE = 10 V)

ICEO

Ð

5

100

nA

Collector±Emitter Breakdown Voltage (IC = 10 mA)

V(BR)CEO

25

80

Ð

Volts

Collector±Base Breakdown Voltage (IC = 100 μA)

V(BR)CBO

30

100

Ð

Volts

Emitter±Collector Breakdown Voltage (IE = 100 μA)

V(BR)ECO

7

Ð

Ð

Volts

DC Current Gain (IC = 5 mA, VCE = 5 V) (Typical Value)

hFE

Ð

16K

Ð

Ð

Collector±Emitter Capacitance (f = 1 MHz, VCE = 5 V)

CCE

Ð

4.9

Ð

pF

Collector±Base Capacitance (f = 1 MHz, VCB = 5 V)

CCB

Ð

6.3

Ð

pF

Emitter±Base Capacitance (f = 1 MHz, VEB = 5 V)

CEB

Ð

3.8

Ð

pF

COUPLED

Output Collector Current (IF = 1 mA, VCE = 5 V)

H11B1

IC (CTR)(2)

5 (500)

Ð

Ð

mA (%)

H11B3

1 (100)

Ð

Ð

Collector±Emitter Saturation Voltage (IC = 1 mA, IF = 1 mA)

VCE(sat)

Ð

0.7

1

Volts

Turn±On Time (I

= 5 mA, V

= 10 V, R = 100 Ω)(3)

t

Ð

3.5

Ð

μs

F

CC

L

on

Turn±Off Time (I

= 5 mA, V

= 10 V, R = 100 Ω)(3)

t

Ð

95

Ð

μs

F

CC

L

off

Rise Time (I

F

= 5 mA, V

= 10 V, R

= 100 Ω)(3)

t

Ð

1

Ð

μs

CC

L

r

Fall Time (I

= 5 mA, V

= 10 V, R

= 100 Ω)(3)

t

Ð

2

Ð

μs

F

CC

L

f

Isolation Voltage (f = 60 Hz, t = 1 sec)(4)

VISO

7500

Ð

Ð

Vac(pk)

Isolation Resistance (V = 500 V)(4)

RISO

1011

Ð

Ð

Ω

Isolation Capacitance (V = 0 V, f = 1 MHz)(4)

CISO

Ð

0.2

Ð

pF

1.Always design to the specified minimum/maximum electrical limits (where applicable).

2.Current Transfer Ratio (CTR) = IC/IF x 100%.

3.For test circuit setup and waveforms, refer to Figure 11.

4.For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

TYPICAL CHARACTERISTICS

	2
							PULSE			ONLY
(VOLTS)	1.8						PULSE		OR DC
VOLTAGE
	1.6
FORWARD,
	1.2
	1.4
				TA =	±55		°C
V
					25°C
F
	1				100°C
		1		10								100									1000

IF, LED FORWARD CURRENT (mA)

Figure 1. LED Forward Voltage versus Forward Current

(NORMALIZED)	10
		NORMALIZED TO: IF = 10 mA
			TA = 25°C
CURRENT	1
COLLECTOR		+70°C
	0.1	TA = ±55°C THRU
OUTPUT		+25°C
		0.5	1	2	5	10	20	50
		+100°C
	0.01
,			I , LED INPUT CURRENT (mA)
C
I			F

Figure 2. Output Current versus Input Current

2	Motorola Optoelectronics Device Data