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Cascadable Silicon Bipolar
MMICÊ Amplifiers
Technical Data
Features
•Cascadable 50 Ω Gain Block
•3 dB Bandwidth:
DC to 3.8 GHz
•12.5 dBm Typical P1 dB at 1.0Ê GHz
•8.5 dB Typical Gain at 1.0Ê GHz
•Unconditionally Stable (k>1)
•Cost Effective Ceramic Microstrip Package
Description
The MSA-0435 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is
designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications.
The MSA-series is fabricated using HP’s 10 GHz fT, 25Ê GHz MAXf , silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Available in cut lead version (package 36) as MSA-0436.
Typical Biasing Configuration
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R bias |
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VCC > 7 V |
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RFC (Optional) |
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C block |
4 |
C block |
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3 |
IN |
1 |
MSA |
OUT |
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Vd = 5.25 V |
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2 |
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MSA-0435, -0436
35 micro-X Package[1]
Note:
1.Short leaded 36 package available upon request.
5965-9575E |
6-330 |
MSA-0435, -0436 Absolute Maximum Ratings
Parameter |
Absolute Maximum[1] |
Device Current |
100 mA |
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Power Dissipation[2,3] |
650mW |
RF Input Power |
+13dBm |
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Junction Temperature |
200°C |
Storage Temperature[4] |
–65 to 200°C |
Notes:
1.Permanent damage may occur if any of these limits are exceeded.
2.TCASE = 25°C.
3.Derate at 7.1 mW/°C for TC > 109°C.
4.Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit.
5.The small spot size of this technique results in a higher, though more
accurate determination of qjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Thermal Resistance[2,5]:
θjc = 140°C/W
Symbol |
Parameters and Test Conditions: Id = 50 mA, ZO = 50 Ω |
Units |
Min. |
Typ. |
Max. |
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GP |
PowerGain(|S21|2) |
f = 0.1 GHz |
dB |
7.5 |
8.5 |
9.5 |
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GP |
Gain Flatness |
f = 0.1 to 2.5 GHz |
dB |
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± 0.6 |
± 1.0 |
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f3 dB |
3 dB Bandwidth |
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GHz |
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3.8 |
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VSWR |
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Input VSWR |
f = 0.1 to 2.5 GHz |
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1.4:1 |
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Output VSWR |
f = 0.1 to 2.5 GHz |
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1.9:1 |
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NF |
50 Ω Noise Figure |
f = 1.0 GHz |
dB |
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6.5 |
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P1 dB |
Output Power at 1 dB Gain Compression |
f = 1.0 GHz |
dBm |
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12.5 |
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IP3 |
Third Order Intercept Point |
f = 1.0 GHz |
dBm |
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25.5 |
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tD |
Group Delay |
f = 1.0 GHz |
psec |
|
125 |
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Vd |
Device Voltage |
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V |
4.75 |
5.25 |
5.75 |
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dV/dT |
Device Voltage Temperature Coefficient |
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mV/°C |
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–8.0 |
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Note:
1.The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current is on the following page.
Part Number Ordering Information
Part Number |
No. of Devices |
Container |
MSA-0435 |
10 |
Strip |
MSA-0436-BLK |
100 |
Antistatic Bag |
MSA-0436-TR1 |
1000 |
7" Reel |
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For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-331
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