HP AT-41533-TR1, AT-41533-BLK, AT-41511-TR1, AT-41511-BLK Datasheet

General Purpose, Low Noise

NPNÊ SiliconBipolarTransistor

Technical Data

AT-41511

AT-41533

Features

•General Purpose NPN Bipolar Transistor

•900 MHz Performance:

AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA

•Characterized for 3, 5, and 8 Volt Use

•SOT-23 and SOT-143 SMT Plastic Packages

•Tape-and-Reel Packaging Option Available[1]

Outline Drawing

EMITTER COLLECTOR

415

BASE EMITTER

SOT 143 (AT-41511)

COLLECTOR

415

BASE EMITTER

SOT 23 (AT-41533)

1.Refer to “Tape-and-Reel Packaging for Semiconductor Devices.”

Description

Hewlett-Packard’s AT-41511 and AT-41533 are general purpose NPN bipolar transistors that offer excellent high frequency performance at an economical price. The AT-41533 uses the

3Ê lead SOT-23, while the AT-415 11 places the same die in the lower parasitic 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques.

The 4 micron emitter-to-emitter pitch of these transistors yields high performance products that can perform a multiplicity of tasks. The 14 emitter finger interdigitated geometry yields an intermediate-sized transistor with easy to match to impedances, low noise figure, and moderate power.

Optimized for best performace from a 5 to 8 volt bias supply, these transistors are also good

performers at 2.7 V. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, or active mixer.

An optimum noise match near 50Ê ohms at 900 MHz makes these devices particularly easy to use as LNAs. Typical amplifier designs at 900 MHz yield 1 dB noise figures with 15 dB or more associated gain at a 5 V, 5 mA bias, with good gain and noise figure obtainable at biases as low as 2 mA.

The AT-415 series bipolar transistors are fabricated using Hewlett-Packard’s 10 GHz fT Self- Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices.

5965-8929E

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AT-41511, AT-41533 Absolute Maximum Ratings

			Absolute
Symbol	Parameter	Units	Maximum[1]
VEBO	Emitter-Base Voltage	V	1.5
VCBO	Collector-Base Voltage	V	20
VCEO	Collector-Emitter Voltage	V	12
IC	Collector Current	mA	50
PT	Power Dissipation[2,3]	mW	225
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to 150

Thermal Resistance:[2]

θjc =550°C/W

Notes:

1.Operation of this device above any one of these parameters may cause permanent damage.

2.TMounting Surface = 25°C.

3.Derate at 1.82 mW/°C for TC > 26°C.

Electrical Specifications, TA = 25°C

					AT-41511			AT-41533
Symbol	Parameters and Test Conditions		Units	Min		Typ	Max	Min	Typ	Max
hFE	Forward Current Transfer Ratio	VCE = 5 V	-	30		150	270	30	150	270
		IC = 5 mA
ICBO	Collector Cutoff Current	VCB = 3 V	μA				0.2			0.2
IEBO	Emitter Cutoff Current	VEB = 1 V	μA				1.0			1.0

Characterization Information, TA = 25°C

				AT-41511		AT-41533
Symbol	Parameters and Test Conditions		Units	Min	Typ	Min	Typ
NF	Noise Figure	f = 0.9 GHz	dB		1.0		1.0
	VCE = 5 V, IC = 5 mA	f = 2.4 GHz			1.7		1.6
GA	Associated Gain	f = 0.9 GHz	dB		15.5		14.5
	VCE = 5 V, IC = 5 mA	f = 2.4 GHz			11		9
P1dB	Power at 1 dB Gain Compression (opt tuning)	f = 0.9 GHz	dBm		14.5		14.5
	VCE = 5 V, IC = 25 mA
G1dB	Gain at 1 dB Gain Compression (opt tuning)	f = 0.9 GHz	dB		17.5		14.5
	VCE = 5 V, IC = 25 mA
IP3	Output Third Order Intercept Point,	f = 0.9 GHz	dBm		25		25
	VCE = 5 V, IC =25 mA (opt tuning)
|S21E|2	Gain in 50 Ω system; VCE = 5 V, IC = 5 mA	f = 0.9 GHz	dB	13.5	15.5	10.8	12.8
		f = 2.4 GHz			7.9		5.2

Ordering Information

Part Number	Increment	Comments
AT-41511-BLK	100	Bulk
AT-41511-TR1	3000	7" Reel
AT-41533-BLK	100	Bulk
AT-41533-TR1	3000	7" Reel

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AT-41511, AT-41533 Typical Performance

	3.0				25 mA			3.0				25 mA			3.0
	2.5							2.5							2.5
(dB)							(dB)					2 mA		(dB)					25 mA
	2.0							2.0							2.0
					10 mA							10 mA
FIGURE							FIGURE							FIGURE					10 mA
	1.5				2, 5 mA			1.5				5 mA			1.5				5 mA
NOISE	1.0						NOISE	1.0						NOISE	1.0
	0.5							0.5							0.5
	0	0.6	1.1	1.6	2.1	2.6		0	0.6	1.1	1.6	2.1	2.6		0	0.6	1.1	1.6	2.1	2.6
	0.1							0.1							0.1

FREQUENCY (GHz)

FREQUENCY (GHz)

FREQUENCY (GHz)

Figure 1. AT-41511 and AT-41533 Minimum Noise Figure vs. Frequency and Current at VCE = 2.7 V.

Figure 2. AT-41511 and AT-41533 Minimum Noise Figure vs. Frequency and Current at VCE = 5 V.

Figure 3. AT-41511 and AT-41533 Minimum Noise Figure vs. Frequency and Current at VCE = 8 V.

	20					25			20							20
		10, 25 mA									PKG 11							PKG 11
	15	5 mA				20			15							15
11 (dB)		2 mA			PKG 11		33 (dB)
		10, 25 mA						(dB)			PKG 33			10, 25 mA	(dB)			PKG 33			10, 25 mA
																10					5 mA
	10					15			10					5 mA
PKG		5 mA					PKG	a						10, 25 mA	a						10, 25 mA
		2 mA						G						5 mA	G						5 mA
a							a
G	5					10	G		5							5
					PKG 33				0							0
	0	0.6	1.1	1.6	2.1	5				0.6	1.1	1.6	2.1	2.6			0.6	1.1	1.6	2.1	2.6
	0.1					2.6			0.1							0.1
		FREQUENCY (GHz)									FREQUENCY (GHz)							FREQUENCY (GHz)

Figure 4. AT-41511 and AT-41533 Associated Gain vs. Frequency and Current at VCE = 2.7 V.

Figure 5. AT-41511 and AT-41533 Associated Gain vs. Frequency and Current at VCE = 5 V.

Figure 6. AT-41511 and AT-41533 Associated Gain vs. Frequency and Current at VCE = 8 V.

	20							20							20
																			25 mA
	15							15				25 mA			15
														(dBm)
(dBm)							(dBm)												10 mA
	10				25 mA			10				10 mA			10
dB							dB							dB
					10 mA
1							1						5 mA	1
P							P							P						5 mA
						5 mA
	5							5							5
	0	0.6	1.1	1.6	2.1	2.6		0	0.6	1.1	1.6	2.1	2.6		0	0.6	1.1	1.6	2.1	2.6
	0.1							0.1							0.1
			FREQUENCY (GHz)							FREQUENCY (GHz)							FREQUENCY (GHz)

Figure 7. AT-41511 and AT-41533 P1dB vs. Frequency and Bias at VCEÊ =Ê 2.7Ê V,withOptimalTuning.

Figure 8. AT-41511 and AT-41533 P1dB vs. Frequency and Bias at VCEÊ =Ê 5Ê V,withOptimalTuning.

Figure 9. AT-41511 and AT-41533 P1dB vs. Frequency and Bias at VCEÊ =Ê 8Ê V,withOptimalTuning.

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