Loading...
0.5–12 GHz Low Noise
Gallium Arsenide FET
Technical Data
Features
•Low Noise Figure:
0.5dB Typical at 4 GHz
•Low Bias:
VDS =2V,IDSÊ =Ê 20mA
•High Associated Gain:
13.0dB Typical at 4 GHz
•High Output Power:
20.0dBm Typical P1 dB at 4 GHz
•Cost Effective Ceramic Microstrip Package
•Tape-and Reel Packaging Option Available[1]
ATF-10136
Description |
36 micro-X Package |
The ATF-10136 is a high performance gallium arsenide Schottky-barrier- gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12 GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns.
Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
Electrical Specifications, TA = 25°C
Symbol |
Parameters and Test Conditions |
|
Units |
Min. |
Typ. |
Max. |
|
|
|
|
|
|
|
NFO |
Optimum Noise Figure: VDS = 2 V, IDS = 25 mA |
f = 2.0 GHz |
dB |
|
0.4 |
0.6 |
|
|
f = 4.0 GHz |
dB |
|
0.5 |
|
|
|
f = 6.0 GHz |
dB |
|
0.8 |
|
|
|
|
|
|
|
|
GA |
Gain @ NFO; VDS = 2 V, IDS = 25 mA |
f = 2.0 GHz |
dB |
12.0 |
16.5 |
|
|
|
f = 4.0 GHz |
dB |
13.0 |
|
|
|
|
f = 6.0 GHz |
dB |
|
11.0 |
|
|
|
|
|
|
|
|
P1 dB |
Power Output @ 1 dB Gain Compression |
f = 4.0 GHz |
dBm |
|
20.0 |
|
|
VDS = 4 V, IDS = 70 mA |
|
|
|
|
|
G1 dB |
1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA |
f = 4.0 GHz |
dB |
|
12.0 |
|
gm |
Transconductance: VDS = 2 V, VGS = 0 V |
|
mmho |
70 |
140 |
|
IDSS |
Saturated Drain Current: VDS = 2 V, VGS = 0 V |
|
mA |
70 |
130 |
180 |
VP |
Pinchoff Voltage: VDS = 2 V, IDS = 1 mA |
|
V |
-4.0 |
-1.3 |
-0.5 |
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
5-23 |
5965-8701E |
Loading...