Fairchild Semiconductor NM34W02LM8X, NM34W02EM8, NM34W02ULMT8X, NM34W02ULMT8, NM34W02ULM8X Datasheet

March 1999

NM34W02

2K-Bit Standard 2-Wire Bus Interface Serial EEPROM with Full Array Write Protect

Designed with Permanent Write-Protection for First 128 Bytes for Serial Presence Detect Application on Memory Modules (PC100 Compliant)

General Description

The NM34W02 is 2048 bits of CMOS non-volatile electrically erasable memory. This device is specifically designed to support Serial Presence Detect circuitry in memory modules. This communications protocol uses CLOCK (SCL) and DATA I/O (SDA) lines to synchronously clock data between the master (for example a microprocessor) and the slave EEPROM device(s).

The contents of the non-volatile memory allows the CPU to determine the capacity of the module and the electrical characteristics of the memory devices it contains. This will enable "plug and play" capability as the module is read and PC main memory resources utilized through the memory controller.

The first 128 bytes of the memory of the NM34W02 can be permanently Write Protected by writing to the "WRITE PROTECT" Register. Write Protect implementation details are described under the section titled Addressing the WP Register. In addition, like the NM24Wxx product family, the entire memory array can be write-protected through "WP" pin.

The NM34W02 is available in a JEDEC standard TSSOP package for low profile memory modules for systems requiring efficient space utilization such as in a notebook computer. Two options are available: L - Low Voltage and LZ - Low Power, allowing the part to be used in systems where battery life is of primary importance.

Features

■PC100 Compliant

■Extended Operating Voltage: 2.7V-5.5V

■Software Write-Protection for first 128 bytes

■Hardware Write-Protection for entire memory array

■200 μA active current typical

–1.0 μA standby current typical (L)

–0.1 μA standby current typical (LZ)

■IIC compatible interface

–Provides bidirectional data transfer protocol

■Sixteen byte page write mode

–Minimizes total write time per byte

■Self timed write cycle

- Typical write cycle time of 6ms

■Endurance: 1,000,000 data changes

■Data retention greater than 40 years

■Packages available: 8-pin TSSOP and 8-pin SO

■Temperature Ranges: Commercial and Extended

Block Diagram

VCC
VSS
WP					H.V. GENERATION
				START CYCLE
					TIMING &CONTROL
SDA		START
		STOP
		LOGIC
		CONTROL
		LOGIC
		SLAVE ADDRESS		16	E2PROM
		REGISTER &			ARRAY
SCL		COMPARATOR		XDEC
					16 x 16 x 8
		LOAD	INC
	A2	WORD
	A1
		ADDRESS
	A0
		COUNTER		0/1/2/3	16
				4
				4
		R/W			YDEC
		Device Address Bits			8
		Write Protect		CK		DOUT
		Register			DATA REGISTER
		DIN

DS500078-1

EEPROM Serial Interface Bus Wire-2 Standard Bit-2K NM34W02 Protect Write Array Full with

© 1999 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

NM34W02 Rev. C.2

Connection Diagram

SO (M8) and TSSOP (MT8) Package

A0		1	8		VCC
A1		2	7		WP
			NM34W02
A2		3	6		SCL
VSS		4	5		SDA

DS500078-2

Top View

See Package Number

M08A and MTC08

	Pin Names
A0,A1,A2	Device Address Inputs
VSS	Ground
SDA	Data I/O
SCL	Clock Input
WP	Write Protect
VCC	Power Supply

Ordering Information

NM 34

W 02

LZ E XX

Letter

Description

Package

M8

8-Pin SO8

MT8

8-Pin TSSOP

Temp. Range

None

0 to 70°C

E

-40 to +85°C

Voltage Operating Range

Blank

4.5V to 5.5V

L

2.7V to 4.5V

LZ

2.7V to 4.5V and

<1μA Standby Current

Density

02

2K

W

Full Array Write Protect

Interface

34

IIC

NM

Fairchild Non-Volatile

Memory

EEPROM Serial Interface Bus Wire-2 Standard Bit-2K NM34W02 Protect Write Array Full with

2	www.fairchildsemi.com

NM34W02 Rev. C.2

Product Specifications

Absolute Maximum Ratings

Ambient Storage Temperature	–65°C to +150°C
All Input or Output Voltages
with Respect to Ground	6.5V to –0.3V
Lead Temperature
(Soldering, 10 seconds)	+300°C
ESD Rating	2000V min.

Operating Conditions

Ambient Operating Temperature
NM34W02	0°C to +70°C
NM34W02E	-40°C to +85°C
Positive Power Supply
NM34W02	4.5V to 5.5V
NM34W02L	2.7V to 4.5V
NM34W02LZ	2.7V to 4.5V

Standard VCC (4.5V to 5.5V) DC Electrical Characteristics

Symbol	Parameter	Test Conditions		Limits		Units
			Min	Typ	Max
				(Note 1)
ICCA	Active Power Supply Current	fSCL = 100 kHz		0.2	1.0	mA
ISB	Standby Current	VIN = GND or VCC		10	50	μA
ILI	Input Leakage Current	VIN = GND to VCC		0.1	1	μA
ILO	Output Leakage Current	VOUT = GND to VCC		0.1	1	μA
VIL	Input Low Voltage		–0.3		VCC x 0.3	V
VIH	Input High Voltage		VCC x 0.7		VCC + 0.5	V
VOL	Output Low Voltage	IOL = 3 mA			0.4	V

Low VCC (2.7V to 5.5V) DC Electrical Characteristics

Symbol	Parameter	Test Conditions				Limits			Units
				Min			Typ	Max
						(Note 1)
ICCA	Active Power Supply Current	fSCL = 100 kHz				0.2		1.0	mA
ISB	Standby Current for L	VIN = GND or VCC				1		10	μA
	Standby Current for LZ	VIN = GND or VCC				0.1		1	μA
ILI	Input Leakage Current	VIN = GND to VCC				0.1		1	μA
ILO	Output Leakage Current	VOUT = GND to VCC				0.1		1	μA
VIL	Input Low Voltage			–0.3				VCC x 0.3	V
VIH	Input High Voltage			VCC x 0.7				VCC + 0.5	V
VOL	Output Low Voltage	IOL = 3 mA						0.4	V
Capacitance TA = +25°C, f = 100/400 KHz, VCC = 5V (Note 2)
Symbol	Test		Conditions	Max	Units
CI/O	Input/Output Capacitance (SDA)		VI/O = 0V	8	pF
CIN	Input Capacitance (A0, A1, A2, SCL)		VIN = 0V	6	pF

Note 1: Typical values are TA = 25°C and nominal supply voltage (5V).

Note 2: This parameter is periodically sampled and not 100% tested.

EEPROM Serial Interface Bus Wire-2 Standard Bit-2K NM34W02 Protect Write Array Full with

3	www.fairchildsemi.com

NM34W02 Rev. C.2

AC Conditions of Test

Input Pulse Levels	VCC x 0.1 to VCC x 0.9
Input Rise and Fall Times	10 ns
Input & Output Timing Levels	VCC x 0.5
Output Load	1 TTL Gate and CL = 100 pF

Read and Write Cycle Limits (Standard and Low VCC Range 2.7V - 5.5V)

Symbol	Parameter	100 KHz		400 KHz		Units
		Min	Max	Min	Max
fSCL	SCL Clock Frequency		100		400	KHz
TI	Noise Suppression Time Constant at
	SCL, SDA Inputs (Minimum VIN		100		50	ns
	Pulse width)
tAA	SCL Low to SDA Data Out Valid	0.3	3.5	0.1	0.9	μs
tBUF	Time the Bus Must Be Free before	4.7		1.3		μs
	a New Transmission Can Start
tHD:STA	Start Condition Hold Time	4.0		0.6		μs
tLOW	Clock Low Period	4.7		1.5		μs
tHIGH	Clock High Period	4.0		0.6		μs
tSU:STA	Start Condition Setup Time	4.7		0.6		μs
	(for a Repeated Start Condition)
tHD:DAT	Data in Hold Time	0		0		ns
tSU:DAT	Data in Setup Time	250		100		ns
tR	SDA and SCL Rise Time		1		0.3	μs
tF	SDA and SCL Fall Time		300		300	ns
tSU:STO	Stop Condition Setup Time	4.7		0.6		μs
tDH	Data Out Hold Time	300		50		ns
tWR	Write Cycle Time - NM34W02		10		10	ms
(Note 3)	- NM34W02L, NM34W02LZ		15		15

Note 3: The write cycle time (tWR) is the time from a valid stop condition of a write sequence to the end of the internal erase/program cycle. During the write cycle, the NM34W02 bus interface circuits are disabled, SDA is allowed to remain high per the bus-level pull-up resistor, and the device does not respond to its slave address.

EEPROM Serial Interface Bus Wire-2 Standard Bit-2K NM34W02 Protect Write Array Full with

4	www.fairchildsemi.com

NM34W02 Rev. C.2