Fairchild Semiconductor RGP10K, RGP10A, RGP10G, RGP10J, RGP10B Datasheet

Discrete POWER & Signal

Technologies

RGP10A - RGP10M

Features

•1.0 ampere operation at TA = 55°C with no thermal runaway.

•High temperature metallurgically bonded construction.

•Glass passivated cavity-free junction.

•Typical IR less than 1μA.

•Fast switching for high efficiency.

																		1.0 min			(25.4)
																				Dimensions in
																				inches (mm)
																0.205					(5.21)
																				0.160	(4.06)
DO-41
											0.107										(2.72)
COLOR BAND DENOTES CATHODE																			0.080		(2.03)
																				0.034 (0.86)
																0.028						(0.71)

1.0 Ampere Glass Passivated Fast Recovery Rectifiers

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol	Parameter	Value	Units
IO	Average Rectified Current	1.0	A
	.375 " lead length @ TL = 55°C
if(surge)	Peak Forward Surge Current
	8.3 ms single half-sine-wave	30	A
	Superimposed on rated load (JEDEC method)
PD	Total Device Dissipation	2.5	W
	Derate above 25°C	17	mW/°C
RθJA	Thermal Resistance, Junction to Ambient	50	°C/W
Tstg	Storage Temperature Range	-65 to +175	°C
TJ	Operating Junction Temperature	-65 to +175	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics			TA = 25°C unless otherwise noted
Parameter							Device					Units
		10A		10B		10D	10G	10J	10K		10M
Peak Repetitive Reverse Voltage		50		100		200	400	600	800		1000	V
Maximum RMS Voltage		35		70		140	280	420	560		700	V
DC Reverse Voltage (Rated VR)		50		100		200	400	600	800		1000	V
Maximum Reverse Current												μA
@ rated VR	TA = 25°C						5.0
	TA = 150°C						200					μA
Maximum Reverse Recovery Time					150			250	500			nS
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Maximum Forward Voltage @ 1.0 A							1.3					V
Typical Junction Capacitance							15					pF
VR = 4.0 V, f = 1.0 MHz

RGP10M-RGP10A

ã1999 Fairchild Semiconductor Corporation

RPG10A - RPG10M, Rev. A