Fairchild Semiconductor SSS70N10A Datasheet

Advanced Power MOSFET

SSS70N10A

FEATURES

BVDSS = 100 V

Avalanche Rugged Technology

R

= 0.023 Ω

Rugged Gate Oxide Technology

DS(on)

Lower Input

Capacitance

ID

= 28 A

Improved Gate Charge

Extended Safe Operating Area

TO-220F

175ΟC Operating Temperature

Lower Leakage Current : 10 μA (Max.) @ VDS = 100V

Lower RDS(ON) : 0.018 Ω(Typ.)

1

2

3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

Units

VDSS

Drain-to-Source Voltage

100

V

Continuous

Drain Current (T

=25 Ο

)

28

ID

C

C

A

Continuous

Drain Current (T

=100

Ο

)

19.8

C

C

DM

Drain

Current-Pulsed

O

220

A

I

1

VGS

Gate-to-Source Voltage

+ 20

V

AS

Single Pulsed Avalanche Energy

O

1568

mJ

E

2

AR

Avalanche Current

O

28

A

I

1

AR

Repetitive Avalanche Energy

O

4.9

mJ

E

1

dv/dt

Peak

Diode

Recovery dv/dt

O3

6.5

V/ns

PD

Total

Power

Dissipation (TC=25 ΟC)

49

W

Linear

Derating Factor

0.32

W/ ΟC

TJ , TSTG

Operating Junction and

- 55 to +175

Storage Temperature Range

ΟC

Maximum Lead Temp. for Soldering

TL

300

Purposes, 1/8” from case for 5-seconds

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

R JC

Junction-to-Case

--

3.09

ΟC /W

θ

Junction-to-Ambient

--

62.5

R JA

θ

Rev. B

©1999 Fairchild Semiconductor Corporation

SSS70N10A

N-CHANNEL

POWER MOSFET

Electrical Characteristics (T

=25ΟC

unless otherwise

specified)

C

Symbol

Characteristic

Min.

Typ.

Max.

Units

Test Condition

BVDSS

Drain-Source Breakdown Voltage

100

--

--

V

VGS=0V,ID=250 μA

BV/ T

J

Breakdown Voltage Temp. Coeff.

--

0.12

--

V/

Ο

C

I =250μA

See Fig 7

D

VGS(th)

Gate Threshold

Voltage

2.0

--

4.0

V

VDS=5V,ID=250 μA

IGSS

Gate-Source Leakage , Forward

--

--

100

nA

VGS=20V

Gate-Source Leakage , Reverse

--

--

-100

VGS=-20V

IDSS

Drain-to-Source Leakage Current

--

--

10

μ A

VDS=100V

--

--

100

VDS=80V,TC=150ΟC

RDS(on)

Static Drain-Source

--

--

0.023

Ω

VGS=10V,ID=14A

O4

On-State

Resistance

gfs

Forward

Transconductance

--

34.51

--

Ω

VDS=40V,ID=14A

O4

Ciss

Input Capacitance

--

3750

4870

VGS=0V,VDS=25V,f =1MHz

Coss

Output Capacitance

--

850

980

pF

See Fig 5

Crss

Reverse Transfer Capacitance

--

375

430

td(on)

Turn-On Delay Time

--

22

60

VDD=50V,ID=70A,

tr

Rise Time

--

24

60

ns

RG=5.3Ω

td(off)

Turn-Off

Delay

Time

--

112

240

OO

See Fig 13

tf

Fall Time

--

84

180

4 5

Qg

Total Gate Charge

--

151

195

V

=80V,V

GS

=10V,

DS

Qgs

Gate-Source Charge

--

31

--

nC

ID=70A

4

Qgd

Gate-Drain(“Miller”) Charge

--

66

--

See Fig 6 & Fig 12

OO5

Source-Drain Diode Ratings and Characteristics

Symbol

Characteristic

Min.

Typ.

Max.

Units

Test Condition

IS

Continuous Source Current

--

--

28

A

Integral reverse pn-diode

I

Pulsed-Source

Current

1

--

--

220

in the MOSFET

SM

O

VSD

Diode Forward

Voltage

O4

--

--

1.6

V

TJ=25ΟC ,IS=28A,VGS=0V

t

Reverse Recovery Time

--

143

--

ns

T =25ΟC ,I

=70A

rr

J

F

Qrr

Reverse Recovery Charge

--

0.72

--

μ

diF/dt=100A/ μ s

4

C

O

Notes ;

O1

O2

O3

O4

O5

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=3mH, IAS=28A, VDD=25V, RG=27 Ω, Starting TJ =25 oC

ISD < 70A, di/dt < 530A/μs, VDD< BVDSS , Starting TJ =25oC Pulse Test : Pulse Width = 250 μs, Duty Cycle <2%

Essentially Independent of Operating Temperature

N-CHANNEL	SSS70N10A
POWER MOSFET

Fig 1. Output Characteristics

			VGS
[A]		Top :	1 5 V
	102		10 V
			8.0 V
Current			7.0 V
			6.0 V
			5.5V
			5.0 V
		Bottom : 4.5 V
Drain	101
,
D			@ Notes :
I
			1. 250 μs Pulse Test
			2. T	= 25 oC
	100		C
		-1	0	1
	10		10	10

VDS , Drain-Source Voltage [V]

Fig 2. Transfer Characteristics

[A]	102
Current		175 oC
Drain	101
		25 oC		@ Notes :
,
				1. VGS = 0 V
D
				2. VDS = 40 V
I		- 55 oC
				3. 250 μs Pulse Test
	100	4	6	8	10
	2

VGS , Gate-Source Voltage [V]

	-Source On-Resistance	0.03	Fig 3. On-Resistance vs. Drain Current						[A]	Fig 4. Source-Drain Diode Forward Voltage
									Reverse Drain Current
					VGS = 10 V					102
]		0.02
Ω
[
,
DS(on)						V	= 20 V			101
R		0.01				GS
	Drain								,	175 oC							@ Notes :
									DR								1. VGS = 0 V
						@ Note : TJ = 25 oC			I		25 oC						2. 250 μs Pulse Test
		0.00	50	100	150	200	250	300		100	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0	2.2	2.4	2.6
		0								0.4
				ID , Drain Current		[A]							VSD , Source-Drain Voltage					[V]

Fig 5. Capacitance vs. Drain-Source Voltage

		8000		Ciss= Cgs+ Cgd ( Cds= shorted )
	[pF]			Coss= Cds+ Cgd
		6000		Crss= Cgd
			C iss
	Capacitance	4000	C oss
			C rss	@ Notes :
		2000		1. VGS = 0 V
				2. f = 1 MHz
		0	0	1
		10		10

VDS , Drain-Source Voltage [V]

Fig 6. Gate Charge vs. Gate-Source Voltage

[V]	10				VDS = 20 V
Voltage
				VDS = 50 V
				VDS = 80 V
Gate-Source	5
,
GS							@ Notes : ID =70.0 A
V	0
		20	40	60	80	100	120	140	160
	0
			QG , Total Gate Charge				[nC]