Fairchild Semiconductor RGF1J, RGF1K, RGF1M, RGF1A, RGF1B Datasheet

RGF1A - RGF1M

Features

•Glass passivated junction.

•For surface mounted application.

•Low forward voltage drop.

•High current capability.

•Easy pick and place.

•High surge current capability.

3.93

3.73

1.67

1.47+

2.38

2.18

5.49

0.181 (4.597)

0.157 (3.988)

0.062 (1.575)

0.055 (1.397)

2		1		0.114 (2.896)
				0.098 (2.489)

0.208 (5.283)

0.188 (4.775)

SMA/DO-214AC

COLOR BAND DENOTES CATHODE

0.096 (2.438)

0.078 (1.981)

5.29

0.060 (1.524)

0.008 (0.203)

0.012 (0.305)

Minimum Recommended

0.030 (0.762)

0.002 (0.051)

0.006 (0.152)

Land Pattern

1.0 Ampere Fast Recovery Rectifiers

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

IO

Average Rectified Current

1.0

A

@ TL = 125° C

if(surge)

Peak Forward Surge Current

8.3 ms single half-sine-wave

30

A

Superimposed on rated load (JEDEC method)

PD

Total Device Dissipation

1.76

W

Derate above 25° C

11.7

mW/° C

Rθ JA

Thermal Resistance, Junction to Ambient **

85

° C/W

Rθ JL

Thermal Resistance, Junction to Lead**

28

° C/W

Tstg

Storage Temperature Range

-65 to +175

° C

TJ

Operating Junction Temperature

-65 to +175

° C

*These ratings

are limiting values above which the serviceability of any semiconductor device may be impaired.

**Device mounted on FR-4 PCB 0.013 mm.

Electrical Characteristics

TA = 25°C unless otherwise noted

Parameter

Device

Units

1A

1B

1D

1G

1J

1K

1M

Peak Repetitive Reverse Voltage

50

100

200

400

600

800

1000

V

Maximum RMS Voltage

35

70

140

280

420

560

700

V

DC Reverse Voltage (Rated VR)

50

100

200

400

600

800

1000

V

Maximum Reverse Current

A

@ rated VR

TA = 25° C

5.0

TA = 125° C

100

A

Maximum Forward Voltage @ 1.0 A

1.3

V

Maximum Reverse Recovery Time

150

250

500

nS

IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A

Typical Junction Capacitance

8.5

pF

VR = 4.0 V, f = 1.0 MHz

RGF1M-RGF1A

1998 Fairchild Semiconductor International

RGF1A-RGF1M, Rev. E

												Fast Recovery Rectifiers
																(continued)
Typical Characteristics																	-RGF1A
																	RGF1M
	Forward Current Derating Curve								(A)	Non-Repetitive Surge Current
	1.25									50
FORWARD CURRENT (A)	1								FORWARD SURGE CURRENT	40
	0.75									30
		RESISTIVE OR
	0.5	INDUCTIVE LOAD								20
		P.C.B. MOUNTED
		ON 0.2 x 0.2"
	0.25	(5.0 x 5.0 mm)								10
		COPPER PAD AREAS
	0	25	50	75	100	125	150	175	PEAK	0	2	5	10	20		50	100
	0									1
			LEAD TEMPERATURE ( º C)								NUMBER OF CYCLES AT 60Hz
		Forward Characteristics									Reverse Characteristics
	20									30
	10								A)	10
(A)
													TA = 150ºC
FORWARD CURRENT		TA = 125ºC							REVERSE CURRENT (
	1									1
													TA = 100ºC
					TA = 25ºC
	0.1									0.1
				Pulse Width = 300 s									TA = 25º C
	0.01			2% Duty Cycle						0.01
		0.6	0.8	1	1.2	1.4	1.6	1.8			20	40	60	80	100	120	140
	0.4									0
			FORWARD VOLTAGE (V)							PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
							Junction Capacitance
						50
					(pF)	20
					CAPACITANCE	10
						5
						2
						1	2	5	10	20	50	100
						1
								REVERSE VOLTAGE (V)
																RGF1A-RGF1M, Rev. E