Fairchild Semiconductor TIP100, TIP102, TIP101 Datasheet

TIP100/101/102

Monolithic Construction With Built In Base-

Emitter Shunt Resistors

• High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)

• Collector-Emitter Sustaining Voltage

• Low Collector-Emitter Saturation Voltage

•

Industrial Use

1

TO-220

•

Complementary to TIP105/106/107

1.Base 2.Collector

3.Emitter

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings TC=25° C unless otherwise noted

Equivalent Circuit

Symbol

Parameter

Value

Units

C

VCBO

Collector-Base Voltage

: TIP100

60

V

: TIP101

80

V

:TIP102

100

V

B

VCEO

Collector-Emitter Voltage

: TIP100

60

V

: TIP101

80

V

: TIP102

100

V

VEBO

Emitter-Base Voltage

5

V

R1

R2

IC

Collector Current (DC)

8

A

R1 10kΩ

E

ICP

Collector Current (Pulse)

15

A

R2 0.6kΩ

IB

Base Current (DC)

1

A

PC

Collector Dissipation (Ta=25° C)

2

W

Collector Dissipation (TC=25° C)

80

W

TJ

Junction Temperature

150

° C

TSTG

Storage Temperature

- 65 ~ 150

° C

Electrical Characteristics TC=25° C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Max.

Units

V

(sus)

Collector-Emitter Sustaining Voltage

CEO

: TIP100

IC = 30mA, IB = 0

60

V

: TIP101

80

V

: TIP102

100

V

ICEO

Collector Cut-off Current

VCE = 30V, IB = 0

50

A

: TIP100

: TIP101

VCE = 40V, IB = 0

50

A

: TIP102

VCE = 50V, IB = 0

50

A

ICBO

Collector Cut-off Current

VCE = 60V, IE = 0

50

A

: TIP100

: TIP101

VCE = 80V, IE = 0

50

A

: TIP102

VCE = 100V, IE = 0

50

A

IEBO

Emitter Cut-off Current

VEB = 5V, IC = 0

2

mA

hFE

DC Current Gain

VCE = 4V, IC = 3A

1000

20000

VCE = 4V, IC = 8A

200

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 3A, IB = 6mA

2

V

IC = 8A, IB = 80mA

2.5

V

VBE(on)

Base-Emitter ON Voltage

VCE = 4V, IC = 8A

2.8

V

Cob

Output Capacitance

VCB = 10V, IE = 0, f = 0.1MHz

200

pF

TIP100/101/102

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

Typical Characteristics

	5
		IB = 1mA		700uA
CURRENT		0.9mA			600uA	500uA
	4
		0.8mA			400uA
	3				IB = 300 uA
[A],COLLECTOR
	2				IB = 200 uA
	1
C
I
				IB = 100 uA
	0	1	2	3	4	5
	0

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

VOLTAGE	10k
SATURATION				Ic = 500 IB
		VBE(sat)
(sat)[V],	1k
		VCE(sat)
CE
(sat), V
BE
V	100
		1	10	100
	0.1
		IC[A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

	100
CURRENT				1ms
	10				100
					s
				DC	5ms
COLLECTOR	1
	0.1			TIP100
[A],
				TIP101
C
I				TIP102
	0.01	1	10		100
	0.1

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area

GAIN	10k			TIP100/101/102
			VCE = 4V
CURRENTDC,	1k
FE
h
	100	1		10
	0.1
		Ic[A], COLLECTOR CURRENT

Figure 2. DC current Gain

	10k
[pF], CAPACITANCE	1k
	100
	10
ob
C
	1	1	10	100
	0.1

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 4. Collector Output Capacitance

	120
DISSIPATION	100
	80
	60
[W], POWER	40
C	20
P
	0	25	50	75	100	125	150	175
	0
			TC[oC], CASE TEMPERATURE

Figure 6. Power Derating

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001