Fairchild Semiconductor TIP31A, TIP31, TIP31C, TIP31B Datasheet

TIP31 Series(TIP31/31A/31B/31C)

Medium Power Linear Switching Applications

• Complementary to TIP32/32A/32B/32C

			1		TO-220
NPN Epitaxial Silicon Transistor				1.Base 2.Collector		3.Emitter
Absolute Maximum Ratings TC=25° C unless otherwise noted
Symbol		Parameter		Value		Units
VCBO	Collector-Base Voltage	: TIP31		40			V
		: TIP31A		60			V
		: TIP31B		80			V
		: TIP31C		100			V
VCEO	Collector-Emitter Voltage	: TIP31		40			V
		: TIP31A		60			V
		: TIP31B		80			V
		: TIP31C		100			V
VEBO	Emitter-Base Voltage			5			V
IC	Collector Current (DC)			3			A
ICP	Collector Current (Pulse)			5			A
IB	Base Current			1			A
PC	Collector Dissipation (TC=25° C)			40			W
PC	Collector Dissipation (Ta=25° C)			2			W
TJ	Junction Temperature			150			° C
TSTG	Storage Temperature			- 65 ~ 150			° C
Electrical Characteristics TC=25° C unless otherwise noted
Symbol	Parameter		Test Condition		Min.	Max.	Units
VCEO(sus)	* Collector-Emitter Sustaining Voltage		IC = 30mA, IB = 0		40		V
		: TIP31
		: TIP31A			60		V
		: TIP31B			80		V
		: TIP31C			100		V
ICEO	Collector Cut-off Current		VCE = 30V, IB = 0
	: TIP31/31A					0.3	mA
	: TIP31B/31C		VCE = 60V, IB = 0			0.3	mA
ICES	Collector Cut-off Current		VCE = 40V, VEB = 0			200	A
		: TIP31
		: TIP31A	VCE = 60V, VEB = 0			200	A
		: TIP31B	VCE = 80V, VEB = 0			200	A
		: TIP31C	VCE = 100V, VEB = 0			200	A
IEBO	Emitter Cut-off Current		VEB = 5V, IC = 0			1	mA
hFE	* DC Current Gain		VCE = 4V, IC = 1A		25
			VCE = 4V, IC = 3A		10	50
VCE(sat)	* Collector-Emitter Saturation Voltage		IC = 3A, IB = 375mA			1.2	V
VBE(sat)	* Base-Emitter Saturation Voltage		VCE = 4V, IC = 3A			1.8	V
fT	Current Gain Bandwidth Product		VCE = 10V, IC = 500mA		3.0		MHz

* Pulse Test: PW≤ 300 s, Duty Cycle≤ 2%

Series(TIP31/31A/31B/31C) TIP31

©2000 Fairchild Semiconductor International

Rev. A, February 2000

Typical Characteristics

	1000
					VCE = 4V
CURRENT GAIN	100
, DC	10
FE
h
	1
	1	10	100	1000	10000
		IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain

	10
	IC(MAX) (PULSE)
CURRENT	IC(MAX) (DC)	100 s
	5ms
COLLECTOR		1ms
	1
[A],	TIP31 VCEO MAX.
	TIP31A VCEO MAX.
C
I
	TIP31B VCEO MAX.
	TIP31C VCEO MAX.
	0.1
	10	100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Safe Operating Area

VOLTAGE	10000
					IC/IB = 10
SATURATION	1000	VBE(sat)
(sat)[mV],	100
CE
V		VCE(sat)
(sat),
BE
V	10
	1	10	100	1000	10000
		IC[mA], COLLECTOR CURRENT

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

	50
	45
DISSIPATION	40
	35
	30
	25
POWER
	20
	15
[W],	10
C
P
	5
	0
	0	25	50	75	100	125	150	175	200
				TC[oC], CASE TEMPERATURE

Figure 4. Power Derating

Series(TIP31/31A/31B/31C) TIP31

©2000 Fairchild Semiconductor International

Rev. A, February 2000