Fairchild Semiconductor RS1A, RS1B, RS1G, RS1D, RS1J Datasheet

Discrete POWER & Signal

Technologies

RS1A - RS1M

0.181 (4.597)

0.157 (3.988)

0.062 (1.575)

Features

0.055 (1.397)

0.114 (2.896)

•

2

1

Glass passivated junction.

0.098 (2.489)

•

For surface mounted applications.

0.208 (5.283)

•

Built in strain relief, ideal for automated

0.188 (4.775)

placement.

SMA/DO-214AC

0.096 (2.438)

COLOR BAND DENOTES CATHODE

0.078 (1.981)

0.060 (1.524)

0.008 (0.203)

0.012 (0.305)

1.0 Ampere Fast Recovery Rectifiers

0.030 (0.762)

0.004 (0.102)

0.006 (0.152)

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

IO

Average Rectified Current

1.0

A

@ TA = 100°C

if(surge)

Peak Forward Surge Current

8.3 ms single half-sine-wave

30

A

Superimposed on rated load (JEDEC method)

PD

Total Device Dissipation

1.19

W

Derate above 25°C

9.5

mW/°C

RqJA

Thermal Resistance, Junction to Ambient **

105

°C/W

RqJC

Thermal Resistance, Junction to Case **

32

°C/W

Tstg

Storage Temperature Range

-55 to +150

°C

TJ

Operating Junction Temperature

-55 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

**Device mounted on FR-4 PCB 0.013 mm.

Electrical Characteristics

TA = 25°C unless otherwise noted

Parameter

Device

Units

1A

1B

1D

1G

1J

1K

1M

Peak Repetitive Reverse Voltage

50

100

200

400

600

800

1000

V

Maximum RMS Voltage

35

70

140

280

420

560

700

V

DC Reverse Voltage (Rated VR)

50

100

200

400

600

800

1000

V

Maximum Reverse Current

μA

@ rated VR

TA = 25°C

5.0

TA = 125°C

50

μA

Maximum Forward Voltage @ 1.0 A

1.3

V

Maximum Reverse Recovery Time

150

250

500

nS

IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A

Typical Junction Capacitance

10

pF

VR = 4.0 V, f = 1.0 MHz

RS1M-RS1A

ã1999 Fairchild Semiconductor Corporation

RS1A-RS1M, Rev. A