Fairchild Semiconductor SB520, SB5100, SB530, SB540, SB550 Datasheet

Discrete POWER & Signal

Technologies

SB520 - SB5100

Features

•Metal to silicon rectifier, majority carrier conduction.

•For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.

•Low power loss, high efficiency.

•High current capability, low VF.

•High surge capacity.

1.0 min (25.4)

Dimensions in

inches (mm)

0.375 (9.53)

0.285 (7.24)

DO-201AD

COLOR BAND DENOTES CATHODE

0.210 (5.33)

0.190 (4.83)

0.052 (1.32)

0.048 (1.22)

5.0 Ampere High Current Schottky Barrier Rectifiers

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol	Parameter	Value	Units
IO	Average Rectified Current	5.0	A
	.375 " lead length @ TA = 75°C
if(surge)	Peak Forward Surge Current
	8.3 ms single half-sine-wave	150	A
	Superimposed on rated load (JEDEC method)
PD	Total Device Dissipation	5.0	W
	Derate above 25°C	40	mW/°C
RqJA	Thermal Resistance, Junction to Ambient	25	°C/W
Tstg	Storage Temperature Range	-50 to +150	°C
TJ	Operating Junction Temperature	-50 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics				TA = 25°C unless otherwise noted
Parameter							Device							Units
			520		530	540	550		560		580		5100
Peak Repetitive Reverse Voltage			20		30	40	50		60		80		100	V
Maximum RMS Voltage			14		21	28	35		42		56		70	V
DC Reverse Voltage (Rated VR)			20		30	40	50		60		80		100	V
Maximum Reverse Current TA = 25°C							0.5							mA
@ rated VR	TA = 100°C			50						25				mA
Maximum Forward Voltage @ 5.0 A				0.55			0.67				0.85			V
Typical Junction Capacitance				500						380				pF
VR = 4.0 V, f = 1.0 MHz

SB5100-SB520

ã1999 Fairchild Semiconductor Corporation

SB520 - SB5100, Rev. A