Fairchild Semiconductor NM27C128N150, NM27C128NE120, NM27C128NE200, NM27C128Q150, NM27C128Q200 Datasheet

July 1998

NM27C128

131,072-Bit (16K x 8) High Performance CMOS EPROM

General Description

The NM27C128 is a high performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manufactured with Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as 90 ns access time over the full operating range.

The NM27C128 provides microprocessor-based systems extensive storage capacity for large portions of operating system and application software. Its 90 ns access time provides high speed operation with high-performance CPUs. The NM27C128 offers a single chip solution for the code storage requirements of 100% firmware-based equipment. Frequently-used software routines are quickly executed from EPROM storage, greatly enhancing system utility.

The NM27C128 is configured in the standard EPROM pinout which provides an easy upgrade path for systems which are currently using standard EPROMs.

The NM27C128 is one member of a high density EPROM Family which range in densities up to 4 Mb.

Features

■High performance CMOS

—90 ns access time

■Fast turn-off for microprocessor compatibility

■JEDEC standard pin configuration

—28-pin PDIP package

—32-pin chip carrier

—28-pin CERDIP package

■Drop-in replacement for 27C128 or 27128

■40% faster programming time with Fairchild’s turbo algorithm

Block Diagram

VCC

Data Outputs O0 - O7

GND

VPP

OE

Output Enable,

PGM

and Chip

Output

Enable Logic

CE

Buffers

	. .
Y Decoder		Y Gating

A0 - A14

Address

Inputs

	X Decoder	.	131,072-Bit
		. .	Cell Matrix
		. . . .

DS011329-1

EPROM CMOS Performance High 8) x (16K Bit-131,072 NM27C128

© 1998 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

Connection Diagrams

27C080 27C040

27C020

27C010 27C512 27C256

DlP

27C256

27C512 27C010

27C020

27C040

27C080

A19

VPP

VPP

VPP

VCC

VCC

VCC

VCC

NM27C128

A16

A16

A16

A16

PGM

PGM

A18

A18

VPP

28

VCC

VCC

A15

A15

A15

A15

A15

VPP

1

VCC

XX

XX

A17

A17

A12

A12

A12

A12

A12

A12

A12

2

27

A14

A14

PGM

A14

A14

A14

A14

A7

A7

A7

A7

A7

A7

A7

3

26

A13

A13

A13 A13

A13

A13

A13

A6

A6

A6

A6

A6

A6

A6

4

25

A8

A8

A8

A8

A8

A8

A8

24

A5

A5

A5

A5

A5

A5

A5

5

A9

A9

A9

A9

A9

A9

A9

A4

A4

A4

A4

A4

A4

A4

6

23

A11

A11

A11 A11

A11

A11

A11

22

A3

A3

A3

A3

A3

A3

A3

7

OE

OE

OE/VPP

OE/VPP

OE

OE

OE

A2

A2

A2

A2

A2

A2

A2

8

21

A10

A10

A10 A10

A10

A10

A10

A1

A1

A1

A1

A1

A1

A1

9

20

CE

CE

CE/PGM

CE/PGM CE/PGM

CE

CE

A0

A0

A0

A0

A0

A0

A0

10

19

O7

O7

O7

O7

O7

O7

O7

18

O0

O0

O0

O0

O0

O0

O0

11

O6

O6

O6

O6

O6

O6

O6

O1

O1

O1

O1

O1

O1

O1

12

17

O5

O5

O5

O5

O5

O5

O5

O2

O2

O2

O2

O2

O2

O2

13

16

O4

O4

O4

O4

O4

O4

O4

GND

GND

GND

GND

GND

GND

GND

14

15

O3

O3

O3

O3

O3

O3

O3

DS011329-8

Note: Compatible EPROM pin configurations are shown in the blocks adjacent to the NM27C128 pins.

Commercial Temp. Range (0°C to +70°C) VCC = 5V ±10%

Parameter/Order Number	Access Time (ns)
NM27C128 Q, N, V 90	90
NM27C128 Q, N, V 120	120
NM27C128 Q, N, V 150	150
NM27C128 Q, N, V 200	200

Pin Names

Symbol							Description
A0–A13							Addresses
							Chip Enable
			CE
							Output Enable
		OE
O0–O7							Outputs
							Program
	PGM
	NC						No Connect

Extended Temp. Range

(-40°C to +85°C) VCC = 5V ±10%

Parameter/Order Number	Access Time (ns)
NM27C128 QE, NE, VE 120	120
NM27C128 QE, NE, VE 150	150
NM27C128 QE, NE, VE 200	200

Note: Surface mount PLCC package available for commercial and extended temperature ranges only.

Package Types: NM27C128 Q, N, V XXX

Q = Quartz-Windowed Ceramic DIP

N = Plastic OTP DIP

V = Surface-Mount PLCC

•All packages conform to the JEDEC standard.

•All versions are guaranteed to function for slower speeds.

				PLCC
						Top							PGM
		A7		A12		VPP		NC		VCC					A13
	4			3		2		1		32 31 30
A6		5													29				A8
A5		6													28				A9
A4		7													27				A11
A3		8													26				NC
A2		9													25					OE
A1		10													24				A10
A0		11													23				CE
NC		12													22				O7
O0		13													21				O6
	14			15		16		17		18		19			20
		O1		O2		GND		NC		O3			O4		O5							DS011329-3

EPROM CMOS Performance High 8) x (16K Bit-131,072 NM27C128

2	www.fairchildsemi.com

Absolute Maximum Ratings (Note 1)

Storage Temperature	-65°C to +150°C
All Input Voltages except A9 with
Respect to Ground	-0.6V to +7V
VPP and A9 with Respect
to Ground	-0.7V to +14V
VCC Supply Voltage with
Respect to Ground	-0.6V to +7V
ESD Protection	> 2000V

Read Operation

All Output Voltages with
Respect to Ground		VCC + 1.0V to GND -0.6V
Operating Range
Range	Temperature		VCC
Comm’l	0°C to +70°C		+5V ±10%
Industrial	-40°C to +85°C		+5V ±10%

DC Electrical Characteristics Over Operating Range with VPP = VCC

Symbol	Parameter					Test Conditions		Min	Max	Units
VIL	Input Low Level							-0.5	0.8	V
VIH	Input High Level							2.0	VCC +1	V
VOL	Output Low Voltage		IOL = 2.1 mA						0.4	V
VOH	Output High Voltage	IOH = -2.5 mA						3.5		V
ISB1	VCC Standby Current		CE		= VCC ±0.3V				100	μA
	(CMOS)		VIL = GND ± 0.3V, VIH = VCC ±0.3V
I	V Standby Current (T2L)	CE = V							1	mA
SB2	CC					IH
I	V Active Current, T2L Inputs	CE =				OE	= V , f = 5 MHz		35	mA
CC1	CC						IL
		I/O = 0 mA
IPP	VPP Supply Current	VPP = VCC							10	μA
VPP	VPP Read Voltage							GND	VCC	V
ILI	Input Load Current	VIN = 5.5V or GND						-1	1	μA
ILO	Output Leakage Current	VOUT = 5.5V or GND						-10	10	μA

AC Electrical Characteristics Over Operating Range with VPP = VCC

Symbol								Parameter	90		120		150		200		Units
									Min	Max	Min	Max	Min	Max	Min	Max
tACC		Address to Output Delay								90		120		150		200	ns
tCE						to Output Delay				90		120		150		200	ns
				CE
tOE						to Output Delay				50		50		50		50	ns
			OE
tCF		CE High to Output Float								30		30		45		55	ns
(Note 2)
tDF										35		35		45		55	ns
				OE	High to Output Float
(Note 2)
tOH		Output Hold from Addresses,
(Note 2)					or				0		0		0		0		ns
		CE					OE,
		Whichever Occurred First

EPROM CMOS Performance High 8) x (16K Bit-131,072 NM27C128

3	www.fairchildsemi.com

Capacitance TA = +25°C, f = 1 MHz (Note 2)

Symbol	Parameter	Conditions	Typ	Max	Units
CIN	Input Capacitance	VIN = 0V	6	12	pF
COUT	Output Capacitance	VOUT = 0V	9	12	pF

AC Test Conditions

Output Load	1 TTL Gate and CL = 100 pF (Note 8)
Input Rise and Fall Times		≤ 5 ns
Input Pulse Levels		0.45 to 2.4V
Timing Measurement Reference Level (Note 10)
Inputs		0.8V and 2.0V
Outputs		0.8V and 2.0V
AC Waveforms (Notes 6, 7, 9)
ADDRESSES	2V	Addresses Valid
	0.8V
CE	2V		tCF
	0.8V
		tCE	(Notes 4, 5)
	2V
OE
	0.8V	tOE	tDF
		(Note 3)	(Notes 4, 5)
OUTPUT	2V	Hi-Z	Hi-Z
	0.8V		Valid Output
		tACC	tOH
		(Note 3)
			DS011329-4

Note 1: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Note 2: This parameter is only sampled and is not 100% tested.

Note 3: OE may be delayed up to tACC - tOE after the falling edge of CE without impacting tACC.

Note 4: The tDF and tCF compare level is determined as follows:

High to TRI-STATE®, the measured VOH1 (DC) - 0.10V;

Low to TRI-STATE, the measured VOL1 (DC) + 0.10V.

Note 5: TRI-STATE may be attained using OE or CE .

Note 6: The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.1 μF ceramic capacitor be used on every device between V CC and GND.

Note 7: The outputs must be restricted to VCC + 1.0V to avoid latch-up and device damage.

Note 8: TTL Gate: IOL = 1.6 mA, IOH = -400 μA.

CL = 100 pF includes fixture capacitance.

Note 9: VPP may be connected to VCC except during programming.

Note 10: Inputs and outputs can undershoot to -2.0V for 20 ns Max.

EPROM CMOS Performance High 8) x (16K Bit-131,072 NM27C128

4	www.fairchildsemi.com