Datasheet ILQ2XSM, ILQ2X Specification

IL1, IL2, IL5, IL74
ILD1, ILD2, ILD5, ILD74
ILQ1, ILQ2, ILQ5, ILQ74

HIGH DENSITY

PHOTOTRANSISTOR OPTICALLY

COUPLED ISOLA T ORS

APPROVALS

zz

z UL recognised, File No. E91231

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IL* Package Code " GG "
ILD*/ILQ* Package Code " FF "

'X' SPECIFICATION APPROV ALS

Add 'X' after part number

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z VDE 0884 in 3 available lead form : -

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- STD

- G form

- SMD approved to CECC 00802

DESCRIPTION

The IL*, ILD*, ILQ* series of optically coupled
isolators consist of infrared light emitting diodes
and NPN silicon photo transistors in space
efficient dual in line plastic packages.

FEA TURES

z Options :-

10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.

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z Three package types

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z High Current Transfer Ratio (50% min)

z High Isolation V oltage (5.3kV

z High BV

IL2, ILD2, ILQ2, IL5, ILD5, ILQ5

(70V min)

CEO

RMS

,7.5kV

PK

APPLICA TIONS

z Computer terminals

z Industrial systems controllers

z Measuring instruments

z Signal transmission between systems of

different potentials and impedances

OPTION SM

SURFACE MOUNT

0.6

0.1

10.46

9.86

1.25

0.75

OPTION G

7.62

0.26

10.16

IL1
IL2
IL5
IL74

2.54

7.0

6.0

Dimensions in mm

1

6

25

34

1.2

7.62

6.62

4.0

7.62

3.0
13°

Max

ILD1
ILD2

3.0

0.5

3.35

0.5

0.26

ILD5
ILD74

1.2

)

3.0

ILQ1
ILQ2
ILQ5
ILQ74

1.2

3.0

2.54

10.16

9.16

20.32

19.32

2.54

0.5

3.35

0.5

7.0

6.0

4.0

3.0

1
2
3

8
7
6

45

7.62

0.5

0.26
1
2

3
4

5

7.0

6.0

6
7
8

7.62

4.0

3.0

0.5

3.35

0.26

13°
Max

16
15
14
13

12
11
10

9

13°
Max

17/7/08

ISOCOM COMPONENTS 2004 L TD

Unit 25B, Park V iew Road W est,

Park V iew Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1UD

Tel: [phone] Fax :[phone]

DB91088

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage T emperature -40°C to + 125°C
Operating Temperature -25°C to + 100°C
Lead Soldering T emperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current 50mA
Reverse V oltage 6 V
Power Dissipation 70mW

OUTPUT TRANSISTOR

Collector-emitter V oltage BV
IL2,ILD2,ILQ2,IL5,ILD5,ILQ5 70V

CEO

IL1,ILD1,ILQ1,IL74,ILD74,ILQ74 50V
Emitter-collector V oltage BV
Collector Current 50mA

ECO

6V

Power Dissipation 150mW

POWER DISSIPATION

T otal Power Dissipation 170mW
(derate linearly 2.67mW/°C above 25°C)

ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward V oltage (VF) 1.2 1.65 V IF = 50mA

Reverse Current (IR)10μAVR = 4V

Output Collector-emitter Breakdown (BV

IL2, ILD2, ILQ2, IL5, ILD5, ILQ5 70 V IC = 1mA , ( Note 2 )

CEO

)

IL1, ILD1, ILQ1, IL74, ILD74, ILQ74 50 V IC = 1mA , ( Note 2 )
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I

)6 VI

ECO

)50nAV

CEO

= 100μA

E

= 10V

CE

Coupled Current Transfer Ratio (CTR) (Note 2)

IL1, ILD1, ILQ1 20 30 0 % 10mA IF , 10V V
IL2, ILD2, ILQ2 10 0 50 0 % 10mA IF , 10V V
IL5, ILD5, ILQ5 50 40 0 % 10mA IF , 10V V
IL74, ILD74, ILQ74 12.5 % 16mA IF , 5V V
Saturated Current Transfer Ratio
IL1, ILD1, ILQ1 75 % 10mA IF , 0.4V V
IL2, ILD2, ILQ2 17 0 % 10mA IF , 0.4V V
IL5, ILD5, ILQ5 10 0 % 10mA IF , 0.4V V
IL74, ILD74, ILQ74 12.5 % 16mA IF , 0.5V V
Collector-emitter Saturation V oltage,V
Input to Output Isolation Voltage V
Input to Output Isolation Voltage V
Input-output Isolation Resistance R

ISO
ISO

ISO

CE (SA T)

5300 V
7500 V
5x10

10

0. 4 V 16mA IF , 2mA I
See note 1

RMS

See note 1

PK

Ω V

= 500V (note 1)

IO

Output Rise Time tr 2 μsIF = 10mA
Output Fall Time tf 2 μsV

= 5V , RL = 75Ω

CC

CE
CE
CE

CE

CE
CE
CE
CE

C

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

17/7/08

DB91088m-AAS/A7

Collector Power Dissipation vs. Ambient Temperature

200

Relative Current Transfer Ratio

vs. Ambient Temperature

(mW)

C

150

100

50

Collector power dissipation P

0

-30 0 25 50 75 100 125
Ambient temperature TA ( °C )

Forward Current vs. Ambient Temperature

60

50

(mA)

40

F

1.5
IF = 10mA

VCE = 0.4V

1.0

0.5

Relative current transfer ratio

0

-30 0 25 50 75 100
Ambient temperature TA ( °C )

Relative Current Transfer Ratio

vs. Forward Current

2.8

2.4

2.0

30

20

Forward current I

10

0

-30 0 25 50 75 100 125
Ambient temperature TA ( °C )

Relative Current Transfer Ratio

vs. Ambient Temperature

1.5
IF = 10mA

VCE = 10V

1.0

0.5

Relative current transfer ratio

1.6

1.2

0.8

Relative current transfer ratio

0.4

VCE = 0.4V
TA = 25°C

0

1 2 5 10 20 50

Forward current IF (mA)

Relative Current Transfer Ratio

vs. Forward Current

1.4

1.2

1.0

0.8

0.6

0.4

Relative current transfer ratio

0.2

VCE = 10V
TA = 25°C

17/7/08

0

-30 0 25 50 75 100
Ambient temperature TA ( °C )

0

1 2 5 10 20 50

Forward current IF (mA)

DB91088m-AAS/A7