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ILH100
Datasheet (Siemens)
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Datasheet ILH100 Datasheet (Siemens)

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ILH100
HERMETIC PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
• Operating Temperature Range, –55 ° C to +125 ° C
• Current Transfer Ratio Guaranteed from –55 ° C to +100 ° C Ambient Temperature Range
• High Current Transfer Ratio at Low Input Cur­rent
• Isolation T est V oltage, 3000 VDC
• Base Lead Available for Transistor Biasing
• Standard 8 Pin DIP Package
DESCRIPTION
The ILH100 is designed especially for hi-rel applica­tions requiring optical isolation with high current transfer ratio and low saturation VCE. Each opto­coupler consists of a light emitting diode and a NPN silicon phototransistor mounted and coupled in an 8 pin hermetically sealed DIP package. The ILH100's low input current makes it well suited for direct CMOS to LSTTL/TTL interfaces.
Dimensions in inches (mm)
.390±.005
(9.91±.13)
8 7 6 5
.300 (7.62) typ.
7
Base
2
3
6
5
Collect
Emitter
.020 (.51) min.
.018±.002 (.46±.05)
Siemens XXX XXXX XXYY
1 2 3 4
.100 ±.010 (2.54±.25)
.150 (3.81) max.
.125 (3.18) min.
.320 (8.13) max.
Anode
Cathode
.010±.002 (.25±.05)
Maximum Ratings Emitter
Reverse Voltage................................................................................6.0 V
Forward Current ..............................................................................60 mA
Peak Forward Current
(1)
...................................................................... 1 A
Power Dissipation.........................................................................150 mW
Derate Linearly from 25 °
C........................................................1.5 mW/ ° C
Detector
Collector–Emitter Voltage...................................................................70 V
Emitter–Base Voltage...........................................................................7 V
Collector–Base Voltage .....................................................................70 V
Continuous Collector Current..........................................................50 mA
Power Dissipation.........................................................................300 mW
Derate Linearly from 25 °
C........................................................3.0 mW/ ° C
Package
Input–Output Isolation Test V oltage
Storage Temperature Range ..........................................–65 °
(2)
..................................... 3000 VDC
C to +150 ° C
Operating Temperature Range..........................................–55 to +125 °
Junction Temperature......................................................................150 °
Soldering Time at 240 °
C, 1.6 mm from case................................ 10 sec.
Power Dissipation.........................................................................350 mW
Derate Linearly from 25 °
Notes:
1. Values applies for P
2. Measured between pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8
shorted together. T
C........................................................3.5 mW/ ° C
1 ms, PRR£300 pps.
≤
W
=25 ° C and duration=1 second, RH=45%.
A
C C
5–1
Page 2
µ
Characteristics
Parameter
(T
=25 ° C, unless otherwise specified)
Α
Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage V Reverse Breakdown Voltage V Reverse Current I Capacitance C Thermal Resistance R
F BR
R
J
TH
6VI
1.45 1.7 V I
0.01 10
µ AV
20 pF V 220
° C/W Junction to Lead
Detector Collector-Emitter Saturation Voltage V Base-Emitter Voltage V Collector-Emitter Leakage Current I
CE(sat) BE
CEO
0.25 0.4 V I
0.65 V I
550nAV DC Forward Current Gain HFE 250 400 750 V Saturated DC Forward Gain HFE Capacitance C
Thermal Resistance R
CE
C
CB
C
EB
TH
(sat)
125 200 325 V
6.8
8.5
11
220
pF pF pF
° C/W Junction to Lead
Coupled Characteristics (-55 ° C to 100 ° C)
Saturated Current Transfer Ratio CTR
70 210 250 % I
(sat)
Current Transfer Ratio, Collector-Emitter
CTE
ce
100 300 450 % I
Current Transfer Ratio, Collector-Base
CTR
0.4 0.7 0.9 % I
cb
Isolation and Insulation
Common Mode Rejection Output High CM
Common Mode Rejection Output High CM
Package Capacitance C Insulation Resistance R Leakage Current, Input-Output I
IO
H
L
IO
IO
1000 2000 V/ µ sV
1000 2000 V/ µ sV
1.5 pF V
10
11
10
14
10
Ω µ A Relative Humidity ≤ 50%,
=60 mA
F
=10 µ A
R
=6 V
R
=0 V, f=1 MHz
F
=20 µ A, I
B
=20 µ A
B
=10 V
CE
=10 V, I
CE
=0.4 V, I
CE
V
=5 V, f=1 MHz
CE
=10 mA V
F
=10 mA, V
F
=10 mA, V
F
=500 V
CM
I
=0 mA
F
=500 V
CM
I
=10 mA
F
=0 V, 1 MHz
IO
V
=500 VDC
IO
V
3000 VDC, 5 sec.
IO
CE
B
B
CE
CE
CB
p-p
p-p
=1 mA
=20 µ A
=20 µ A
=0.4 V
=10 V
=9.3 V
, V
CC
, V
CC
=5 V, R
=5 V, R
=1 K Ω ,
L
=1 K Ω ,
L
Typical Switching Speeds (T
Non-Saturated Switching
=25 ° C)
A
Symbol Typ. Max. Unit Test Condition
Delay td 0.8 2 Rise tr 2 5 Storage ts 0.4 1.5 Fall tf 2 5 Propagation-High to Low tpHL 1 3 Propagation-Low to High tpLH 1.5 4
Saturated Switching
(1)
Delay td 0.7 2 Rise tr 1 3 Storage ts 13.5 30 Fall tf 12 30 Propagation-High to Low tpHL 1.4 5
Propagation-Low to High tpLH 15 40
5–2
µ s µ sV µ sR µ sI µ s 50% of V µ sR
µ sV µ sV µ sR µ sI µ sV
sR
=5 V
CC
=75 Ω
L
=10 mA
F
PP
=open
BE
=0.4 V
CE
=0.4 V
CE
=1 K Ω
L
=10 mA
F
=5 V,
CC
V
=1.5 V
TH
=open
BE
ILH100
Page 3
A
A
C
A
C
A
A
A
C
Figure 1. Switching time waveform and test schematic—
I
s
non-saturated test condition
nput
I
V
F
0
OUT
90%
t
r
I
F
100 Ω
Pulse Width=100 µ Duty Cycle=1 %
10%
t
f V
CC
V
OUT
R
L
Figure 2. Forward current versus forward voltage and temperature
100
25°C
125°C
10
Figure 4. Normalized non-saturated current transfer ratio versus temperature and LED current
1.2 Normalized to: Ta = 25 °
Vce = 10V, IF = 10 mA
1.0
10 m
0.8
1 mA
0.6
0.4
NCTRce - Normalized CTR
0.2
.5 mA
5 m
1251007550250-25-50
Ta - Ambient Temperature - °C
Figure 5. Normalized saturated current transfer ratio versus temperature and LED current
1.1
1.0
Vce = 10 V
10 m
20 mA
0.9
0.8
0.7
0.6 Normalized to: Ta = 25°
0.5 Vce = 10V, IF = 10 mA
NCTRce - Normalized CTR
0.4
30 mA
60 mA
1251007550250-25-50
Ta - Ambient Temperature - °C
1
-55°C -25°C 0°C
.1
IF - Forward Current - mA
85°C
1.81.61.41.21.00.8
VF - Forward Voltage - V
Figure 3. Peak LED current versus duty factor refresh rate and temperature
1.2
10KHz
Tj(max) = 150°C
1.0
1KHz
0.8
100 Hz
0.6
10KHz
0.4
1KHz
100Hz
0.2 60 mA
0.0
IF(Pk) - Peak LED Current - A
25°C
125°C
100806040200
DF - Duty Factor - %
Figure 6. Normalized saturated current transfer ratio versus temperature and LED current
0.8
0.7
5 mA
Vce = 0.4 V
10 mA
0.6
0.5
0.4
Saturated CTR
0.3
NCTRce(sat) - Normalized
0.5 mA
1 mA
Normalized to Ta =25°C Vce = 10 V, IF = 10 mA
0.2 1251007550250-25-50
Ta - Ambient Temperature - °C
Figure 7. Collector-emitter current versus temperature and LED current
0.7
0.6
0.5
0.4
10 m
30 mA
Vce = 0.4 V
20 m
0.3
0.2
Saturated CTR
Normalized to: Ta = 25°
0.1
NCTR(sat)- Normalized
Vce = 10 V , IF = 10 mA
0.0
60 m
1251007550250-25-50
Ta - Ambient Temperature - °C
5–3
ILH100
Page 4
IF - LED Current - mA
HFE at Ta 25 C versus base current
Figure 8. Collector-emitter current versus temperature
A
V
V
A
A
A
A
and LED current
100
Vce = 10
10 m
Figure 12. Normalized collector base CRT versus temper­ature and LED current
1.5
10
5 mA 1 mA
1
0.5 mA
.1
Ice - Collector Current - mA
1251007550250-25-50
Ta - Ambient Temperature - °C
Figure 9. Collector-emitter current versus temperature and LED current
200
Vce = 10
150
60 mA
100
50
0
Ice - Collector Current - mA
30 mA 20 mA
10 mA
1251007550250-25-50
Ta - Ambient Temperature - °C
1.0
-55°C
-25°C 0°C
0.5
NCTRcb - Normalized CTRcb
0.0
25°C 85°C
125°C
Normalized to:
IF = 10mA, Ta =25°C
Vcb = 9.3v
100101.1
IF - LED Current - mA
Figure 13. Normalizied Icb photocurrent versus tempera­ture and LED current
10
Normalized to:
If = 10 mA, Ta = 25°C
Vcb = 9.3V
1
.1
.01
.001
NIcb - Normalized Photocurrent
-55°C
-25°C 0°C
25°C 85°C
125°C
IF - LED Current - mA
100101.1
Figure 10. Saturated collector-emitter current versus temperature and LED current
100
10
5 m
10 m
20 mA30 m
60 mA
1 m
1
0.5 mA Vce = 0.4 V
.1
Ice - Collector Current - mA
1251007550250-25-50
Ta - Ambient Temperature - °C
Figure 11. Saturated collector-emitter current versus temperature and LED current
100
Vce = 0.4 V
10
1
10 mA
5 mA
1 mA
0.5 mA
Ice - Collector Current - mA
.1
1251007550250-25-50
Ta - Ambient Temperature - °C
Figure 14. Normalized non-saturated and saturated HFE
=25°C versus base current
at T
A
1.5 Normalized to:
Ib = 20µA, Vce=10V Ta=25°C
1.0
NHFE
Vce = 10V
0.5
NHFE(SAT)
Vce = 0.4V
NHFE - Normalized HFE
0.0
Ib - Base Current - µA
Figure 15. Normalizied non-saturated and saturated HFE
=50°C versus base current
at T
A
1.5 Normalized to:
Ib = 20µA, Vce=10V Ta=25°C
1.0
NHFE
0.5
NHFE(SAT)
Vce = 0.4V
Vce = 10V
NHFE - Normalized HFE
0.0
Ib - Base Current - µA
5–4
1000100101
1000100101
ILH100
Page 5
0
V
0
V
0
V
V
Figure 16. Normalized non-saturated and saturated HFE
g
V
at T
=70°C versus base current
A
1.5
Normalized to:
Ib = 20µA, Vce=10V Ta=25°C
1.0
NHFE(SAT)
0.5 Vce = 0.4V
NHFE - Normalized HFE
0.0
Ib - Base Current - µA
NHFE
Vce = 10V
1000100101
Figure 20. Propagation delay versus temperatureand collector load resistance for I
100
Vcc = 5.25V, Rbe = open, Vth = 1.5
100
10
2.2KΩ tpHL
Propagation Delay - µs
1
Ta - Ambient Temperature - °C
=5 mA
F
47KΩ tpLH
10KΩ tpLH
2.2KΩ tpLH
10KΩ tpHL
47KΩ tpHL
125
1007550250-25-50
Figure 17. Collector-emitter leakage current versus temperature
5
10
4
10
3
10
2
10
1
10
0
10
-1
10
Iceo - Collector-Emitter - nA
-2
10
WORST
CASE
TYPICAL
Ta - Ambient Temperature - °C
Ta - Ambient Temperature - °C
Vce = 10V
100806040200-20
Figure 18. Base emitter voltage versus base current
1000
100
10
1
.1
.01
Ib - Base Current - µA
.001
Ta = 25°C
0.80.70.60.50.4
Vbe - Base Emitter Voltage - V
Figure 21. Propagation delay versus temperatureand collector load resistance for I
100
Vcc = 5.25V, Rbe = open, Vth = 1.5
100
10
2.2KΩ tpHL
Propagation Delay - µs
1
Ta - Ambient Temperature - °C
=10 mA
F
10KΩ tpHL
47KΩ tpLH
10KΩ tpLH
2.2KΩ tpLH
47KΩ tpHL
1007550250-25-50
125
Figure 22. Propagation delay versus temperatureand collector load resistance for I
100
Vcc = 5.25V, Rbe = open, Vth = 1.5
100
10
Propagation Delay - µs
2.2KΩ tpHL
1
Ta - Ambient Temperature - °C
=20 mA
F
47KΩ tpLH 10KΩ tpLH
2.2KΩ tpLH
10KΩ tpHL 47KΩ tpHL
1251007550250-25-50
Figure 19. Base emitter capacitance versus base emitter
Base-emitter capacitance versus base-emitter voltage
voltage
10000
1000
100
10
Cbe -Base Emitter Capacitance - pF
Vbe - Base Emitter Voltage -
Figure 23. Propagation delay versus temperatureand collector load resistance for I
30
Vcc = 5.25V, Rbe = 47KΩ, Vth = 1.5
25
Propagation Delay - µs
20 15 10
5 0
2.2KΩ tpHL
2.2KΩ tpLH
0.80.70.60.50.40.30.20.10.0
Ta - Ambient Temperature - °C
5–5
=5 mA
F
47KΩ tpLH
10KΩ tpLH
10KΩ tpHL
47KΩ tpHL
1251007550250-25-50
ILH100
Page 6
0
Figure 24. Switching time wavef orm and test sc hematic—
I
V
V
Ω
saturated test condition
F
O
t
PHL
t
PLH
V
=1.5
TH
Figure 27. Propagation delay versus collector load and base-emitter resistance for I
1000
Ta = 25°C IF = 5 mA
Vcc = 5.25V Vth = 1.5V
100
10
Propagation Delay - µs
1
1000100
RL - Collector Load Resistor - Ω
=5 mA
F
Base-emitter
resistor
Open(tpHL) Open(tpLH) 1MΩ(tpHL)
1MΩ(tpLH) 470K(tpHL)
470K(tpLH) 100KΩ(tpHL) 100KΩ(tpLH)
1000001000
V
CC
R
L
V
O
R
BE
Figure 25. Propagation dela y ver sus temperature and col­lector load resistance for IF=10 mA
30
Vcc = 5.25, Rbe = 47K
25
Vth = 1.5V
20
47KΩ tpLH
10KΩ tpLH
15
2.2KΩ tpLH
10
2.2KΩ tpHL
5
Propagation Delay - µs
0
10KΩ tpHL
47KΩ tpHL
1251007550250-25-50
Ta - Ambient Temperature - °C
Figure 26. Propagation delay versus temperature and collector load resistance for I
35
Vcc = 5.25V, Rbe = 47KΩ
Vth = 1.5 V 25 20
30
47KΩ tpLH
10KΩ tpHL
=20 mA
F
2.2KΩ tpLH
15 10
5
Propagation Delay - µs
0
10KΩ tpLH2.2KΩ tpHL
47KΩ tpHL
1251007550250-25-50
Ta - Ambient Temperature - °C
Figure 28. Propagation delay versus collector load and base-emitter resistance for I
20
Ta = 25 °C IF = 5 mA Vcc = 5.25V
15
Vth = 1.5V
10
5
Propagation Delay - µs
0
RL - Collector Load Resistor - Ω
RL - Collector Load Resistor - Ω
=5 mA
F
Base-emitter
resistor
82KΩ(tpHL) 82KΩ(tpLH) 47KΩ(tpHL)
47KΩ(tpLH) 33KΩ(tpHL)
33KΩ(tpLH) 22KΩ(tpHL)
22KΩ(tpLH)
100000100001000100
Figure 29. Propagation delay versus collector load and base-emitter resistance for I
1000
Ta = 2 5 ° C IF = 10 mA
Vcc = 5.25 V Vth = 1.5 V
100
10
1
Propagation Delay - µs
RL - Collector Load Resistor - Ω
=10 mA
F
Base-emitter
resistor
Open(tpH L) Open(tpLH)
1MΩ(tpHL) 1MΩ(tpLH) 470K(tpHL)
470K(tpLH) 100KΩ(tpH L)
100KΩ(tpLH) 82KΩ(tpHL) 82KΩ(t pLH )
100000100001000100
Figure 30. Propagation delay versus collector load and base-emitter resistance for I
15
Ta = 25 °C IF = 10 mA Vcc = 5.25 V Vth = 1.5 V
10
5
Propagation Delay - µs
0
=10 mA
F
Base-emitter
resistor
47KΩ(tpHL) 47KΩ(tpLH) 33KΩ(tpHL)
33KΩ(tpLH) 22KΩ(tpHL)
22KΩ(tpLH) 15KΩ(tpHL)
15KΩ(tpHL) 10KΩ(tpHL) 10KΩ(tpLH)
100000100001000100
RL - Collector Load Resistor - Ω
5–6
ILH200
Page 7
Ω
Figure 31. Propagation delay versus collector load and base-emitter resistance for I
1000
Ta = 25°C IF = 15 mA
Vcc = 5.25 V
100
Vth = 1.5 V
10
1
Propagation Delay - µs
.1
RL - Collector Load Resistor - Ω
=15 mA
F
100000100001000100
Base-emitter
resistor
Open(tpHL) Open(tpLH)
1MΩ(tpHL) 1MΩ(tpLH)
470KΩ(tpHL) 470KΩ(tpLH)
100KΩ(tpHL) 100KΩ(tpLH)
82KΩ(tpHL) 82KΩ(tpLH)
Figure 34. Propagation delay versus collector load and base-emitter resistance for I
1000
Ta = 25°C IF = 20 mA
Vcc = 5.25V
100
Vth = 1.5 V
10
1
Propagation Delay - µs
.1
RL - Collector Load Resistor - Ω
=15 mA
F
Open(tpHL) Open(tpLH)
1MΩ(tpHL) 1MΩ(tpLH)
470KΩ(tpHL) 470KΩ(tpLH)
100KΩ(tpHL) 100KΩ(tpLH)
82KΩ(tpHL) 82KΩ(tpLH)
100000100001000100
Figure 32. Propagation delay versus collector load and base-emitter resistance for I
15
Ta = 25°C IF = 15 mA Vcc = 5.25V
10
Vth = 1.5 V
5
Propagation Delay - µs
0
RL - Collector Load Resistor - Ω
=15 mA
F
Base-emitter
emitter
47KΩ(tpHL) 47KΩ(tpLH) 33KΩ(tpHL) 33KΩ(tpLH)
22KΩ(tpHL) 22KΩ(tpLH) 15KΩ(tpHL) 15KΩ(tpLH)
10KΩ(tpHL) 10KΩ(tpLH)
8.2KΩ(tpHL)
8.2KΩ(tpLH)
100000100001000100
Figure 33. Propagation delay versus collector load and base-emitter resistance for I
20
Ta = 25°C IF = 20 mA
15
Vcc = 5.25V Vth = 1.5 V
10
5
Propagation Delay - µs
0
RL - Collector Load Resistor - Ω
=15 mA
F
47KΩ(tpHL) 47KΩ(tpLH)
33KΩ(tpHL) 33KΩ(tpLH) 22KΩ(tpHL) 22KΩ(tpLH)
15KΩ(tpHL) 15KΩ(tpLH) 10KΩ(tpHL) 10KΩ(tpLH)
8.2KΩ(tpHL)
8.2KΩ(tpLH)
100000100001000100
Figure 35. Common mode transient rejection
25000
Ta = 25 °C, Vcc = 5.0V IF(L) = 10 mA, RL = 1K
20000
IF(H) = 0 mA
15000
10000
5000
Rate of Common Mode
Voltage Change - V/µs
0
Vcm - Common Mode Voltage - V
CMR-H
CMR-L
2200200018001600140012001000
5–7
ILH100
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