Datasheet ILD615, ILQ615 Datasheet (Siemens)

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FEATURES

DUAL CHANNEL

QUAD CHANNEL

PHOTOTRANSISTOR OPTOCOUPLER

ILD615

ILQ615

• Identical Channel to Channel Footprint

• Current Transfer Ratio (CTR) Range at
I

=10 mA

F

ILD/Q615-1: 40 – 80% Min.
ILD/Q615-2: 63 – 125% Min.
ILD/Q615-3: 100 – 200% Min.
ILD/Q615-4: 160 – 320% Min.

• Guaranteed CTR at I

=1 mA

F

ILD/Q615-1: 13% Min.
ILD/Q615-2: 22% Min.
ILD/Q615-3: 34% Min.
ILD/Q615-4: 56% Min.

• High Collector-Emitter Voltage BV

CEO

• Dual and Quad Packages Feature:

- Reduced Board Space

- Lower Pin and Parts Count

- Better Channel to Channel CTR Match

- Improved Common Mode Rejection

=70 V

Dimensions in inches (mm)

.268 (6.81)
.255 (6.48)

.390 (9.91)
.379 (9.63)

.045 (1.14)
.030 (.76)

4°

Typ.

.022 (.56)
.018 (.46)

34

12

65

87

.100 (2.54) Typ.

Pin One I.D.

Anode

Cathode

Anode

Cathode

.150 (3.81)
.130 (3.30)

.040 (1.02)
.030 (.76 )

1
2
3
4

.305 Typ.

(7.75) Typ.

10° Typ.

3°–9°

.012 (.30)
.008 (.20)

8
7
6
5

Collector
Emitter
Collector
Emitter

.135 (3.43)
.115 (2.92)

• Field-Effect Stable by TRIOS (TR ansparent IO n
S hield )

• Isolation Test Voltage from Double Molded
Package, 5300 VAC

RMS

• UL Approval #E52744

• VDE #0884 Available with Option 1

Maximum Ratings (Each Channel)
Emitter

Reverse Voltage................................................ 6 V

Forward Current........................................... 60 mA

Surge Current .................................................1.5 A

Power Dissipation ......................................100 mW

Derate Linearly from 25 °

C ................... 1.33 mW/ ° C

Detector

Collector-Emitter Reverse Voltage .................. 70 V

Emitter-Collector Reverse Voltage .................... 7 V

Collector Current.......................................... 50 mA

268 (6.81)
255 (6.48)

4°

Typ.

.022 (.56)
.018 (.46)

.045 (1.14)
.030 (.76)

.100 (2.54) Typ.

.790 (20.07)
.779 (19.77 )

Pin
One
I.D.

.150 (3.81)
.130 (3.30)

.040 (1.02)
.030 (.76 )

Anode

Cathode

Anode

Cathode

Anode

Cathode

Anode

Cathode

1
2
3
4
5
6
7
8

.305 Typ.

(7.75) Typ.

10° Typ.

3°–9°

.012 (.30)
.008 (.20)

16

Collecto

15

Emitter
Collecto

14

Emitter

13

Collecto

12

Emitter

11

Collecto

10

Emitter

9

.135 (3.43
.115 (2.92

Collector Current (t <1 ms) .........................100 mA

Power Dissipation ......................................150 mW

Derate Linearly from 25 °

C........................ 2 mW/ ° C

Package

Storage Temperature................... –55 ° C to +150 ° C

Operating Temperature............... –55 °

C to +100 ° C

Junction Temperature....................................100 °

Soldering Temperature

(2 mm distance from case bottom)...........260 °

Package Power Dissipation, ILD615..........400 mW

Derate Linearly from 25 °

C..................5.33 mW/ ° C

Package Power Dissipation, ILQ615 .........500 mW

Derate Linearly from 25 °

Isolation Test V oltage (t=1 sec.)........5300 VAC

C................. 6.67 mW/ ° C

RMS

Creepage............................................... 7 mm min.

Clearance............................................... 7 mm min.

Isolation Resistance

V

=500 V, T

IO

V

=500 V, T

IO

=25 ° C............................... ≥ 10

A

=100 ° C............................. ≥ 10

A

12
11

DESCRIPTION

The ILD/Q615 are multi-channel phototransistor optocouplers that use GaAs
IRLED emitters and high gain NPN phototransistors. These devices are con­structed using over/under leadframe optical coupling and double molded
insulation technology resulting a Withstand Test Voltage of 7500 VAC

C

and a Working Voltage of 1700 VAC
The binned min./max. and linear CTR characteristics combined with the

C

TRIOS (TRansparent IOn Shield) field-effect process make these devices

RMS

.

well suited for DC or AC voltage detection. Eliminating the phototransistor
base connection provides added electrical noise immunity from the tran­sients found in many industrial control environments.

Because of guaranteed maximum non-saturated and saturated switching
characteristics, the ILD/Q615 can be used in medium speed data I/O and
control systems. The binned min./max. CTR specification allow easy worst
case interface calculations for both level detection and switching applica-

Ω

tions. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at

Ω

an I

=1 mA.

F

PEAK

See Appnote 45, “How to Use Optocoupler Normalized Curves.”

5–1

Characteristics, T

=25 ° C

A

Symbol Min. Typ. Max. Unit Condition

Emitter

Forward Voltage V
Breakdown Voltage V
Reverse Current I
Capacitance C
Thermal Resistance, Junction to Lead R

F

BR

F

O

THJL

1 1.15 1.3 V I
630 VI

0.01 10

µ AV

25 pF V
750

° C/W

F

R

R

R

Detector

Capacitance C
Collector-Emitter Leakage Current, -1, -2 I
Collector-Emitter Leakage Current, -3, -4 I

CEO

CEO

Collector-Emitter Breakdown Voltage BV
Emitter-Collector Breakdown Voltage BV
Thermal Resistance, Junction to Lead R

CE

CEO

ECO

THJL

70 V I
7VI

6.8 pF V
250nAV
5 100 nA V

500

° C/W

CE

CE

CE

CE

E

Package T ransfer Characteristics

Channel/Channel CTR Match CTRX/CTRY 1 to 1 2 to 1 I

F

ILD/Q615-1

Saturated Current Transfer Ratio CTR
Current Transfer Ratio CTR
Current Transfer Ratio CTR

CEsat

CE

CE

40 60 80 % I
13 30 % I

25 % I

F

F

F

ILD/Q615-2

Saturated Current Transfer Ratio CTR
Current Transfer Ratio CTR
Current Transfer Ratio CTR

CEsat

CE

CE

63 80 125 % I
22 45 % I

40 % I

F

F

F

ILD/Q615-3

Saturated Current Transfer Ratio CTR
Current Transfer Ratio CTR
Current Transfer Ratio CTR

CEsat

CE

CE

100 150 200 % I
34 70 % I

60 % I

F

F

F

ILD/Q615-4

Saturated Current Transfer Ratio CTR
Current Transfer Ratio CTR
Current Transfer Ratio CTR

CEsat

CE

CE

160 200 320 % I
56 90 % I

100 % I

F

F

F

Isolation and Insulation

Common Mode Rejection, Output High CMH 5000 V/ µ sV
Common Mode Rejection, Output Low CML 5000 V/ µ sV
Common Mode Coupling Capacitance C

CM

0.01 pF
Package Capacitance CI-O 0.8 pF V
Insulation Resistance R

S

10

14

Ω VIO=500 V, TA=25°C

CM

CM

IO

Channel to Channel Isolation 500 VAC

=10 mA

=10 µ A

=6 V
=0 V, f=1 MHz

=5 V, f=1 MHz
=10 V
=10 V

=0.5 mA

=0.1 mA

=10 mA, V

=10 mA, V
=10 mA, V
=1 mA, V

=10 mA, V
=10 mA, V
=1 mA, V

=10 mA, V
=10 mA, V
=1 mA, V

=10 mA, V
=10 mA, V
=1 mA, V

=50 V
=50 V

CE

CE

CE

CE

CE

CE

CE

CE

CE

CE

CE

CE

CE

P-P

P-P

=0 V, f=1 MHz

=5 V

=0.4 V
=5 V

=5 V

=0.4 V
=5 V

=5 V

=0.4 V
=5 V

=5 V

=0.4 V
=5 V

=5 V

, R
, R

=1 k Ω , I

L

=1 k Ω , I

L

=0 mA

F

=10 mA

F

5–2

ILD/Q615

Switching Times

I

V

F
D

V

I

V

0

Figure 1. Non-saturated switching timing

VCC=5 V

=10 mA

F

F=10 KHz,
DF=50%

Figure 2. Saturated switching timing

=10 KHz,

F=50%

RL=75 Ω

VCC=5

R

L

V

V

O

O

Parameter Typ. Unit Test

t

ON

t

R

t

OFF

t

F

t

Propagation H-L (50% of VPP) 1.1 µs

PHL

t

Propagation L-H 2.5 µs

PHL

Parameter-1IF=20 mA

Typ. Typ. Typ. Unit

-1,-3
IF=10 mA-4IF=5mA Test

3.0 µs

2.0 µs

2.3 µs

2.0 µs

Condition

RL=75 Ω
IF=10 mA
VCC=5 V

Condition

Figure 3. Non-saturated switching timing

F

t

t

0

PLH

t

D

t

R

PHL

t

S

Figure 4. Saturated switching timing

I

F

t

D

t

O

R

t

PLH

t

F

50%

t

ON

t

R

t

OFF

t

F

t

PHL

Propagation
H-L

t

PLH

Propagation
L-H

3.0 4.3 6.0 µs

2.0 2.8 4.6 µs
RL=1 Ω

18 25 25 µs

VCC=5 V

11 14 15 µs

VTH=1.5 V

1.6 2.6 5.4 µs

8.6 7.2 7.4 µs

Figure 5. Maximum LED current versus ambient temperature

120

100

80

60

40

20

0

IF - Maximum LED Current - mA

--60 -40 -20 0 20 40 60 80 10

TJ (MAX)=100°C

Ta - Ambient Temperature - °C

t

PHL

t

S

VTH=1.5 V

t

F

5–3

ILD/Q615

Figure 6. Maximum LED power dissipation

0

200

Figure 10. Maximum collector current ver sus collector
voltage

1000

150

100

- LED Power - mW

50

LED

P

0

--60 -40 -20 0 20 40 60 80 10

Ta - Ambient Temperature - °C

Figure 7. Forward voltage versus forward current

1.4

1.3

Ta = -55°C

1.2

1.1

Ta = 25°C

1.0

0.9

Ta = 85°C

0.8

VF - Forward Voltage - V

0.7

100101.1

IF - Forward Current - mA

100

10

1

Ice - Collector Current - mA

.1

.1 1 10 100

Vce - Collector-Emitter Voltage - V

Rth = 500°C/W

25°C

50°C
75°C

90°C

Figure 11. Normalization factor for non-saturated
and saturated CTR TA=25°C versus if

2.0

Normalized to:

Vce = 10V, IF = 5mA, Ta = 25°C

1.5

1.0

0.5

CTRNF - Normalized CTR Factor

0.0

CTRce(sat) Vce = 0.4V

NCTRce

NCTRce(sat)

Ta = 25°C

.1 1 10 100

IF - LED Current - mA

Figure 8. Peak LED current versus pulse detection, Tau

10000

Duty Factor

.005

1000

If(pk) - Peak LED Current - mA

.01
.02

.05

.1

.2

.5

100

10

10-610-510-410-310-210-110010

t - LED Pulse Duration - s

τ

t

τ

DF = /t

1

Figure 9. Maximum detector power dissipation

200

150

100

50

DET

P - Detector Power - mW

0

-60 -40 -20 0 20 40 60 80 100

Ta - Ambient Temperature - °C

Figure 12. Normalization factor for non-saturated
and saturated CTR T

2.0
Normalized to:

1.5

1.0

0.5

CTRNF - Normalized CTR Factor

0.0

Vce = 10V, IF = 5mA, Ta = 25°C

CTRce(sat) Vce = 0.4V

.1 1 10 100

=50°C versus if

A

NCTRce

NCTRce(sat)

IF - LED Current - mA

Ta = 50°C

Figure 13. Normalization factor for non-saturated
and saturated CTR T

2.0
Normalized to:

Vce = 10V, IF = 5mA, Ta = 25°C

1.5

1.0

0.5

CTRNF - Normalized CTR Factor

0.0

CTRce(sat) Vce = 0.4V

.1 1 10 100

=70°C versus if

A

NCTRce

NCTRce(sat)

IF - LED Current - mA

Ta = 70°C

5–4

ILD/Q615

Figure 14. Normalization factor for non-saturated
and saturated CTR T

2.0
Normalized to:

Vce = 10V, IF = 5mA, Ta = 25°C

1.5

1.0

CTRce(sat) Vce = 0.4V

=85°C versus if

A

NCTRce

Figure 17. -1 Propagation delay versus collector load re­sistor

1000

Ta = 25°C, IF = 10mA

Vcc = 5V, Vth = 1.5V

100

tPLH

4.0

3.5

3.0

2.5

0.5

CTRNF - Normalized CTR Factor

0.0

.1 1 10 100

IF - LED Current - mA

NCTRce(sat)

Ta=100°C

Ta = 100°C

Figure 15. Collector-emitter current ver sus temperature
and LED current

35
30

25

50°C

20
15
10

25°C

85°C

70°C

5
0

Ice - Collector Current - mA

6050403020100

IF - LED Current - mA

Figure 16. Collector-emitter leakage versus
temperature

5

10

4

10

3

10

2

10

1

10

0

10

-1

10

Iceo - Collector-Emitter - nA

-2

10

Vce = 10V

TYPICAL

100806040200-20

Ta - Ambient Temperature - °C

10

tPLH - Propaga tion Low-High - µs

1

.1 1 10 100

RL - Load Resistor - KΩ

tP H L

2.0

1.5

1.0

tPHL - Propagation High-Low - µs

Figure 18. -2, -3 Propagation delay versus collector
load resistor

1000

Ta = 25°C, IF = 10mA

Vcc = 5V, Vth = 1.5V

100

tPLH

10

1

tPLH - Propagation Low-High - µs

.1 1 10 100

RL - Collector Load Resistor - KΩ

tPHL

2.5

2.0

1.5

1.0

tPHL - Propagation High-Low - µs

Figure 19. -4 Propagation delay versus collector
load resistor

1000

Ta = 25°C, IF = 10mA

Vcc = 5V, Vth = 1.5V

100

tPLH

10

1

tPLH - Propagation Low-High - µs

.1 1 10 100

RL - Collector Load Resistor - KΩ

tPHL

2.5

2.0

1.5

1.0

tPHL - Propagation High-Low - µs

5–5

ILD/Q615