Datasheet ILX533K Datasheet (Sony)

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2700 pixel × 3 line CCD Linear Sensor (Color)
For the availability of this product, please contact the sales office.
Description
The ILX533K is a reduction type CCD linear sensor developed for color image scanner. The distance between lines is only 4 line (32µm). This sensor reads A4-size documents at a density of 300DPI.
Features
• Number of effective pixels: 8100 pixels
(2700 pixels × 3)
• Pixel size: 8µm × 8µm (8µm pitch)
• Distance between line: 32µm (4 Lines)
• Number of output 3 (R, G, B)
• Single-sided readout
• Clamp circuit are on-chip
• Ultra high sensitivity/Ultra low lag
• Single 12V power supply
• Maximum data rate: 9MHz (3MHz × 3)
• Input Clock Pulse: CMOS 5V drive
• Package: 22 pin cer-DIP (400 mil)
Block Diagram
φROG-B
11
ILX533K
22 pin DIP (Cer-DIP)
φROG-G 12
φROG-R 13
Absolute Maximum Ratings
• Supply voltage VDD 15 V
• Operating temperature –10 to +55 °C
• Storage temperature –30 to +80 °C
Pin Configuration (Top View)
19
18
17
16
15
14
22
21
20
GND
GND
OUT-B
V
NC
NC
NC
NC
NC
φ2
φRS
OUT-R
V
VOUT-G
VDD
NC
NC
NC
NC
NC
1
2
3
4
5
6
7
8
9
Driver
φ2
14
S2700
Blue
Read Out Gate
S1 D63
D15 D14
CCD Register
VDD
4
Clamp
20
Green
S1
D63
D15 D14
Driver
S2700
Red
Read Out Gate
CCD Register
Clamp
3
S1
D63
D15 D14
Driver
S2700
Read Out Gate
CCD Register
Clamp Pulse
Clamp
2
Driver
Generator
10
1
21
φRS φ1
GND
φROG
φ1
10
11
-B
2700 G 1
2700 R 1
13
2700 B 1
12
φROG
φROG-G
-R
VOUT-B
VOUT-G
VOUT-R
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E97406B79-PS
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Pin Description
Pin No. Symbol Description Pin No. Symbol Description
ILX533K
1 2 3 4 5 6 7 8
9 10 11
φRS VOUT-R VOUT-G VDD NC NC NC NC NC
φ1 φROG-B
Clock pulse input Signal out (red) Signal out (green) 12V power supply NC NC NC NC NC Clock pulse input Clock pulse input
Recommended Supply Voltage
Item
VDD
Min.
11.4
Typ.
12
Max.
12.6
Unit
V
12 13 14 15 16 17 18 19 20 21 22
φROG-G φROG-R φ2
NC NC NC NC NC VOUT-B GND GND
Clock pulse input Clock pulse input Clock pulse input NC NC NC NC NC Signal out (blue) GND GND
Clock Characteristics
Item Input capacity of φ1, φ2 Input capacity of φRS Input capacity of φROG
∗1
It indicates that φROG-R, φROG-G, φROG-B as φROG.
∗1
Symbol Cφ1, Cφ2 CφRS CφROG
Clock Frequency
Item Symbol
φ1, φ2, φRS fφ1, fφ2, fφRS
Input Clock Pulse Voltage Condition
Item
φ1, φ2, φRS, φROG pulse voltage
High level Low level
Min.
— — —
Min.
4.75 —
Min.
—
Typ.
400
10 10
Typ.
5.0 0
Typ.
1
Max.
— — —
Max.
5.25
0.1
Max.
3
Unit
pF pF pF
Unit
MHz
Unit
V V
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Electrooptical Characteristics (Note 1)
Ta = 25°C, VDD = 12V, fφRS = 1MHz, Input clock = 5Vp-p, Light source = 3200K, IR cut filter CM-500S (t = 1.0mm)
Item Symbol Min. Typ. Max. Unit Remarks
ILX533K
Red
Sensitivity
Green
Blue Sensitivity nonuniformity Saturation output voltage
Red Saturation exposure
Green
Blue Dark voltage average Dark signal nonuniformity Image lag Supply current Total transfer efficiency Output impedance Offset level
RR RG RB PRNU VSAT SER SEG SEB VDRK DSNU IL IVDD TTE ZO VOS
6.2
12.3
7.5 —
2.0
0.15
0.10
0.12 — — — — 92 — —
9.5 19
11.5 4
2.5
0.26
0.13
0.21 2 4
0.02
30 98
300
6.3
12.8
25.6
15.5 20 — — — —
5 12 — 50 — — —
V/(lx · s)
%
V
lx · s
mV mV
%
mA
%
Ω
V
Note 2
Note 3 Note 4
Note 5
Note 6 Note 6 Note 7
— — —
Note 8
Note
1) In accordance with the given electrooptical characteristics, the black level is defined as the average value of D2, D3 to D12.
2) For the sensitivity test light is applied with a uniform intensity of illumination.
3) PRNU is defined as indicated below. Ray incidence conditions are the same as for Note 2.
VOUT-G = 500mV (Typ.) PRNU = × 100 [%]
(VMAX – VMIN) /2
VAVE
Where the 2700 pixels are divided into blocks of 100. The maximum output of each block is set to VMAX, the minimum output to VMIN and the average output to VAVE.
4) Use below the minimum value of the saturation output voltage.
5) Saturation exposure is defined as follows.
SE =
VSAT
R
Where R indicates RR, RG, RB, and SE indicates SER, SEG, SEB.
6) Optical signal accumulated time τint stands at 5ms.
7) VOUT-G = 500mV (Typ.)
VOUT
8) Vos is defined as the right side. VOUT indicates VOUT-R, VOUT-G, and VOUT-B.
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VOS
GND
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ILX533K
2770
D70
D65 D64
S2700 S2699 S2698
S2
S1
D63 D62 D61
D15 D14
Optical black (49 pixels)
D13
1-line output period
Clock Timing Chart 1
5
0
φROG
4 3 2
1
5
0
5
0
5
0
φ1
φ2
φRS
D3 D2
D1
OUT
V
Dummy signal (63 pixels)
Noto) The transfer pulses (φ1, φ2) must have more than 2770 cycles.
VOUT indicates VOUT-R, VOUT-G, VOUT-B.
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Clock Timing Chart 2
φROG
ILX533K
t4 t5
t2
t7t6
φ1
φ2
Clock Timing Chart 3
φ1
φ2
t1 t3
t7
t9
t6
t14
t10 t11
φRS
OUT
V
t8
t13
t12
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Clock Pulse Recommended Timing
ILX533K
Item
φROG, φ1 pulse timing φROG pulse high level period φROG, φ1 pulse timing φROG pulse rise time φROG pulse fall time φ1 pulse rise time/φ2 pulse fall time φ1 pulse fall time/φ2 pulse rise time φRS pulse high level period φRS, φ1 pulse timing 1 φRS pulse rise time φRS pulse fall time
Signal output delay time
φRS, φ1/φ2 pulse timing 2
∗1
These timing is the recommended condition under fφRS = 1MHz.
Symbol
t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t11 t12 t13
t14
Min.
50 800 800
0 0 0
0 50 80
0
0 — —
50
Typ.
100 1000 1000
5
5 20 20
250 250
10 10 70 10
250
∗1
∗1 ∗1
Max.
— — — 10 10 60 60 — — 30 30 — —
—
Unit
ns ns ns ns ns ns ns ns ns ns ns ns ns
ns
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IC1: 74AC04
Tr1: 2SC2785
ILX533K
-R φROG-G
φ2 φROG
5.1kΩ
IC1
OUT-B
V
Tr1
IC1
-Bφ1
φROG
12
13
-B
φROG
-G
φROG
-R
φROG
φ1
11
10
2Ω
1415
φ2
NC
9
2Ω
NC
NC
16
NC
17
NC
18
NC
19
V
OUT-B
20
100Ω
GND
21
NC
NC
NC
NC
V
DD
V
OUT-G
OUT-R
V
8
7
6
5
4
100Ω
VOUT-G
5.1kΩ
3
Tr1
2
Tr1
Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for
any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.
∗
Application Circuit
12V
22
0.1µF 47µF/16V
GND
– 7 –
φRS
1
100Ω
OUT-R
V
φRS
IC1
RS = 1MHz
Data rate fφ
∗
5.1kΩ
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Example of Representative Characteristics (VDD = 12V, Ta = 25°C)
Spectral sensitivity characteristics (Standard characteristics)
1
0.8
0.6
0.4
Relative sensitivity
0.2
0
400 450 500 550 600 650 700
Wavelength [nm]
ILX533K
Dark signal output temperature characteristics
(Standard characteristics)
10
5
1
0.5
Output voltage rate
0.1 10 20 30 40 50 60 1
0
Ta – Ambient temperature [°C]
Offset level vs. VDD characteristics
(Standard characteristics)
12
Ta = 25°C
10
Integration time output voltage characteristics
(Standard characteristics)
1
0.5
Output voltage rate
0.1 510
τ int – Integration time [ms]
Offset level vs. temperature characteristics
(Standard characteristics)
12
10
8
6
– Offset level [V]
4
OS
V
2
0
11.4 12.6 V
12
DD [V]
∆V
OS
∆VDD
0.6 – Offset level [V]
OS
V
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8
6
∆VOS
4
2
0
0
10 20 30 40 50 60
Ta – Ambient temperature [°C]
∆Ta
+0.5mV/°C
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Notes of Handling
1) Static charge prevention CCD image sensors are easily damaged by static discharge. Before handling be sure to take the following protective measures. a) Either handle bare handed or use non chargeable gloves, clothes or material.
Also use conductive shoes. b) When handling directly use an earth band. c) Install a conductive mat on the floor or working table to prevent the generation of static electricity. d) Ionized air is recommended for discharge when handling CCD image sensor. e) For the shipment of mounted substrates, use boxes treated for prevention of static charges.
2) Notes on Handling CCD Cer-DIP Packages The following points should be observed when handling and installing cer-DIP packages. a) Remain within the following limits when applying static load to the ceramic portion of the package:
(1)Compressive strength:39N/surface (Do not apply load more than 0.7mm inside the outer perimeter of
the glass portion.) (2)Shearing strength: 29N/surface (3)Tensile strength: 29N/surface (4)Torsional strength: 0.9Nm
ILX533K
Upper ceramic layer
lower ceramic layer
39N
Low-melting glass
(1)
29N 29N 0.9Nm
(2) (3) (4)
b) In addition, if a load is applied to the entire surface by a hard component, bending stress may be
generated and the package may fracture, etc., depending on the flatness of the ceramic portion. Therefore, for installation, either use an elastic load, such as a spring plate, or an adhesive.
c) Be aware that any of the following can cause the glass to crack: because the upper and lower ceramic
layers are shielded by low-melting glass, (1)Applying repetitive bending stress to the external leads. (2)Applying heat to the external leads for an extended period of time with soldering iron. (3)Rapid cooling or heating. (4)Rapid cooling or impact to a limited portion of the low-melting glass with a small-tipped tool such as
tweezers. (5)Prying the upper or lower ceramic layers away at a support point of the low-melting glass.
Note that the preceding notes should also be observed when removing a component from a board after it has already been soldered.
3) Soldering a) Make sure the package temperature does not exceed 80°C. b) Solder dipping in a mounting furnace causes damage to the glass and other defects. Use a grounded 30W
soldering iron and solder each pin in less then 2 seconds. For repairs and remount, cool sufficiently.
c) To dismount an imaging device, do not use a solder suction equipment. When using an electric
desoldering tool, ground the controller. For the control system, use a zero cross type.
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ILX533K
4) Dust and dirt protection a) Operate in clean environments. b) Do not either touch glass plates by hand or have any object come in contact with glass surfaces. Should
dirt stick to a glass surface, blow it off with an air blower. (For dirt stuck through static electricity ionized air is recommended.)
c) Clean with a cotton bud and ethyl alcohol if the glass surface is grease stained. Be careful not to scratch
the glass.
d) Keep in a case to protect from dust and dirt. To prevent dew condensation, preheat or precool when
moving to a room with great temperature differences.
5) Exposure to high temperatures or humidity will affect the characteristics. Accordingly avoid storage or usage in such conditions.
6) CCD image sensors are precise optical equipment that should not be subject to mechanical shocks.
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0° to 9°
ILX533K
0.25
12
22pin DIP (400mil)
32.0 ± 0.5
21.6 (8µm × 2700Pixels)
(AT STAND OFF)
10.16
10.0 ± 0.5
9.0
11
No.1 Pixel (Green)
30.6
1. The height from the bottom to the sensor surface is 1.61 ± 0.3mm.
2. The thickness of the cover glass is 0.7mm, and the refractive index is 1.5.
M
3.4 ± 0.5
0.3
2.7
0.51
Cer-DIP
42 ALLOY
TIN PLATING
3.0g
2.54
Package Outline Unit: mm
5.8 ± 0.8
22
H
V
1
5.0 ± 0.5
4.0 ± 0.5
PACKAGE MATERIAL
PACKAGE STRUCTURE
LEAD TREATMENT
PACKAGE WEIGHT
LEAD MATERIAL
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