Datasheet ILX508A Datasheet (Sony)

Page 1
7926-pixel CCD Linear Image Sensor (B/W)
For the availability of this product, please contact the sales office.
Description
The ILX508A is a reduction type CCD linear sensor developed for high resolution copiers. This sensor reads A3-size documents at a density of 600 DPI (Dot Per Inch). A built-in timing generator and clock-drivers ensure direct drive at 5V logic for easy use. In addition reset pulse can switch between internal generation and external input.
Features
• Pixel size: 7µm × 7µm (7µm pitch)
• Built-in timing generator and clock-drivers
• Ultra high sensitivity
• Ultra low lag/low dark voltage
• Output method
• Maximum operating frequency: 12.5MHz
ILX508A
24 pin DIP (Ceramic)
Absolute Maximum Ratings
• Supply voltage VDD1 11 V
VDD2 6V
•Operation temperature –10 to +60 °C
• Storage temperature –30 to +80 °C
1
GG
Pin Configuration (Top View)
V
GND
VDD1
VOUT
GND
φROG
DD2
V
VDD2
RSSW
T1
2
3
4
5
6
7
8
9
10
1
24
23
22
21
20
19
18
17
16
15
φCLK
V
DD1
RS/SH
DD1
V
V
DD1
GND
DD2
V
GND
T4
T3
11
GND
12
NC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
7926
14
13
T2
NC
– 1 –
E96X33-PS
Page 2
ILX508A
NC 12
13
NCT2T3T4GNDV
D116
1415
16
D115
pulse generator
D99
S7926 S7925
Mode selector Read out gate
6
11
10
22
9
DD2GNDVDD1VDD1VDD1
17
18
19
20
21
23
Clock-drivers
CCD analog shift register
Read out gate
S2 S1
D98
D18
D17
Read out gate
CCD analog shift register
Clock-drivers
24
8
Clock-pulse generator
Sample-and-hold pulse generator
7
5
3
VDD1GND VDD2GND φCLKVDD2 RSSW RS/SH T1 GND φROG
Block Diagram
• Output amplifier
• Sample-and-hold circuit
• Feed through suppression
circuit
4
OUT
V
– 2 –
2
1
VGG
Page 3
Pin Description
ILX508A
Pin No.
1 2 3 4 5 6 7 8
9
10 11 12 13 14 15
Symbol VGG GND VDD1 VOUT GND φROG VDD2 VDD2
RSSW T1
GND NC NC T2 T3
Description Output circuit gate bias GND 9V power supply Signal output GND Clock pulse 5V power supply 5V power supply RS pulse external, internal selection
∗
(External RS → VDD1, Internal RS → GND) Test pin (5V) GND NC NC Test pin (GND) Test pin (5V)
16 17 18 19 20 21 22 23 24
∗
Output mode is changeable as follows.
9pin GND
VDD1
22pin
T4 GND VDD2 GND VDD1 VDD1 RS/SH VDD1 φCLK
Internal RS without S/H
Test pin (GND) GND 5V power supply GND 9V power supply 9V power supply
∗
Clock pulse or S/H switch 9V power supply Clock pulse
GND
Internal RS
with S/H
—
VDD1
—
φRS
—
External RS
without S/H
– 3 –
Page 4
Recommended Voltage
ILX508A
Item VDD1 VDD2
Min.
8.5
4.75
Typ.
9.0
5.0
Max.
9.5
5.25
Note) Rules for raising and lowering power supply voltage.
To raise power supply voltage, first raise VDD1 (9V) and then VDD2 (5V). To lower voltage, first lower VDD2 (5V) and then VDD1 (9V).
Clock Characteristics
Item Input capacity of φCLK Input capacity of φROG Input capacity of RS/SH
φCLK frequency φRS frequency
Symbol CφCLK CφROG C RS/SH fφCLK fφRS
Min.
— — — — —
Typ.
10 10 10
1 1
Unit
V V
Max.
— — —
12.5
12.5
Unit
pF pF
pF MHz MHz
– 4 –
Page 5
ILX508A
Electrooptical Characteristics
∗1
(Ta = 25°C, VDD1 = 9V, VDD2 = 5V, Light source = 3200K, φCLK = 1MHz, Internal φRS mode without S/H,
IR cut filter, CM-500S (t = 1.0mm))
Item Sensitivity1 Sensitivity2 Sensitivity nonuniformity Saturation output voltage Saturation exposure Even and odd black level
DC difference Dark voltage average Dark signal nonuniformity Image lag 9V supply current 5V supply current Total transfer efficiency
Symbol R1 R2 PRNU VSAT SE
∆V VDRK
DSNU IL IVDD1 IVDD2 TTE
Min.
7.5 — —
1.0
0.072 — —
— — — — 90
Typ.
10.8
24.6 5
1.5
0.139
1.0
0.3
0.6
0.02
16
5
97
Max.
13.9 —
12.5 — —
10.0
2
5 — 32 16 —
Unit V/(lx · s) V/(lx · s)
%
V
lx · s
mV mV
mV
% mA mA
%
Remarks
∗2 ∗3 ∗4 ∗5 ∗6
∗7 ∗8
∗9
∗10
— —
— Output impedance Offset level Dynamic range
∗1
In accorcance with the given electrooptical characteristics, the even black level is defined as the mean
ZO VOS DR
— —
500
600
3.0
5000
— — —
Ω
V
—
value of D8, D10, D12, D14, and D16.
∗2
For the sensitivity test light is applied with a uniform intensity of illumination.
∗3
W lamp (2854K).
∗4
PRNU is defined as indicated below. Ray incidence conditions are the same as for ∗2.
PRNU = × 100 [%]
(VMAX – VMIN)/2
VAVE
Where the 7926 pixels are divided into blocks of 102, even and odd pixels, respectively (Even and odd last blocks are 87.) The maximum output of each block is set to VMAX, the minimum output to VMIN and the average output to VAVE.
∗5
Use below the minimum value of the saturation output voltage.
∗6
Saturation exposure is defined as follows.
VSAT
SE =
R1
—
∗11 ∗12
∗7
Indicates the DC difference in value between odd black level and even black level.
∗8
optical signal accumulated time τ int stands at 10ms.
∗9
The difference between the maximum and mean values of the dark output voltage is calculated for even and odd respectively. The larger value is defined as the dark signal nonuniformity. Optical signal accumulated time τ int stands at 10ms.
∗10
VOUT = 500mV (Typ.)
– 5 –
Page 6
∗11
VOS is defined as indicated below.
Vout
V
OS
GND
∗12
Dynamic range is defined as follows.
VSAT
DR =
VDRK
When the optical signal accumulated time is shorter, the dynamic range gets wider because the optical signal accumulated time is in proportion to the dark voltage.
ILX508A
– 6 –
Page 7
10µ/10V0.01µ
ILX508A
φRS
13
14
15
16
17
18
19
20
21
22
23
NC
(D)
(A)
(A)
(D)
T2 (D)
T3 (D)
T4 (D)
GND (D)
DD2
V
GND (D)
DD1
V
DD1
V
RS/SH (D)
DD1
V
(D)
(D)
(A)
(A)
NC
12
GND (A)
11
T1 (D)
10
PSSW (D)
9
DD2
V
8
DD2
V
7
φROG
6
GND (A)
5
OUT
V
4
DD1
V
3
GND (A)
2
φROG
When noise influence into output signal is large, connect pins indicated by (A) to the analog power supply and
pins indicated by (D) to the digital power supply, and also use a decoupling capacitor of large capacitance.
∗
2SA1175
Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for
any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.
1kΩ
Application Circuit (External φRS)
φCLK
9V
5V
24
φCLK
GG
(A)
– 7 –
V
1
10µ/16V
Output signal
0.01µ
10µ/16V
0.01µ
Page 8
ILX508A
2
1
8042
D116 D109 D108
D107 D106 D100
D99 D7926 D7925
D7924 D7923
S4 S3 S2 S1 D98 D97 D96
D20
D19 D18 D17
D16
Dummy signal
Effective picture
(80 pixels)
Optical black
(18 pixels)
(7926 pixels)
elements signal
1 line output period (8042 pixels)
Clock Timing Diagram (External φRS)
D6
D5
4
3 2
1
5
5
0
φROG
5
0
φCLK
0
φRS
D4 D3
D2
D1
VOUT
Dummy signal (98 pixels)
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Page 9
Clock pulse Waveform Conditions
φCLK, φROG pulse related
ILX508A
t8 t9
Internal φRS mode
φCLK
φROG
φCLK
t8 t9
t2
t1
t3
t5t4
External φRS mode
φCLK
Vout
φRS
t10t10
t11
t5t4
t9 t8
t6t7
t13
t10
t12
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Page 10
ILX508A
Item
φROG, φCLK pulse timing φROG, φCLK pulse timing φROG pulse high level period φCLK pulse high level period φCLK pulse low level period φRS pulse low level period φCLK, φRS pulse timing
Input clock pulse rise/fall time
Input clock pulse voltage
Signal output delay time
∗
1
The frequency of φCLK is 1MHz.
High level Low level
Internal φRS
External φRS
Symbol t1 t3 t2 t4 t5 t6 t7 t8, t9 VφCLK, VφROG VφRS t10 t11 t12 t13
Min.
200 1200 1200
40 40 25 60 —
4.5 0
— — — —
Typ.
300 1500 1500
500 500 100 550
5
5.0 — 95 70 45 60
∗
1
∗
1
∗
1
∗
1
10 + t4 + t5
Max.
— — — — — —
10
5.5
0.5 — — — —
Unit
ns ns ns ns ns ns ns ns
V
V ns ns ns ns
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Page 11
Example of Representative Characteristics (VDD1 = 9V, VDD2 = 5V, Ta = 25°C)
Spectral sensitivity characteristics (Standard characteristics)
1.0
0.8
0.6
0.4
Relative sensitivity
0.2
0
400 500 600 700 800 900 1000
Wavelength [nm]
MTF of main scanning direction (Standard characteristics)
Spatial frequency [cycle/mm]
0 14.3 28.6 42.9 57.1 71.4
1.0
ILX508A
0.8
0.6
MTF
0.4
0.2
0
0
0.2 0.4 0.6 0.8 1.0 Normalized spatial frequency
Dark signal output temperature characteristics
(Typical characteristics)
10
5
1
Integration time output voltage characteristics
(Typical characteristics)
1
0.5
Output voltage rate
0.5
0.1 0
10 20 30 40 60
Ta – Ambient temperature [°C]
Output voltage rate
0.1
50 1
– 11 –
5
τ int – integration time [ms]
10
Page 12
ILX508A
Operational frequency characteristics of the VDD1 supply current (Typical characteristics)
15
10
supply current [mA]
DD1
– V
5
DD1
IV
0
0
2 4 6 8 12.5
fφCLK – φCLK clock frequency [MHz]
Offset level vs. V
DD1 characteristics
10
(Typical characteristics)
6
Ta = 25°C
5
Operational frequency characteristics of the VDD2 supply current (Typical characteristics)
60
50
40
30
supply current [mA]
DD2
20
– V
DD2
IV
10
0
0
2 4 6 8 12.5
fφCLK – φCLK clock frequency [MHz]
10
Offset level vs. VDD2 characteristics
(Typical characteristics)
6
Ta = 25°C
5
4
3
– Offset level [V]
2
OS
V
1
0
∆V
OS
~
0.35
∆VDD1
8.5 9 9.5 VDD1 [V]
–
Offset level vs. Temperature characteristics
(Typical characteristics)
6
5
4
3
– Offset level [V]
2
OS
V
1
– Offset level [V]
OS
V
∆VOS
∆Ta
~
– 0.8mV/°C
–
4
3
2
1
0
4.75 5 5.25
∆VOS
∆VDD2
VDD2 [V]
~
–
–0.14
0
0
10 20 30 40 60
Ta – Ambient temperature [°C]
50
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Page 13
Notes on Handling
1) Static charge prevention CCD image sensors are easily damaged by static discharge. Before handling be sure to take the following protective measures. a) Either handle bare handed or use non chargeable gloves, clothes or material. Also use conductive shoes. b) When handling directly use an earth band. c) Install a conductive mat on the floor or working table to prevent the generation of static electricity. d) Ionized air is recommended for discharge when handling CCD image sensor. e) For the shipment of mounted substrates use boxes treated for the prevention of static charges.
2) Regulation for raising and lowering the power supply voltage. When raising the supply voltage, first raise VDD1 (9V) and then VDD2 (5V). Similarly, lower VDD2 (5V) first and then VDD1 (9V).
3) Soldering a) Make sure the package temperature does not exceed 80°C. b) Solder dipping in a mounting furnace causes damage to the glass and other defects. Use a grounded 30W
soldering iron and solder each pin in less then 2 seconds. For repairs and remount, cool sufficienty.
c) To dismount an imaging device do not use a solder suction equipment.
When using an electric desoldering tool, ground the controller. For the control system, use a zero cross type.
ILX508A
4) Dust and dirt protection a) Operate in clean environments. b) Do not either touch glass plates by hand or have any object come in contact with glass surfaces. Should
dirt stick to a glass surface blow it off with an air blow. (For dirt stuck through static electricity ionized air is recommended.)
c) Clean with a cotton bud and ethyl alcohol if the glass surface is grease stained.
Be careful not to scratch the glass.
d) Keep in a case to protect from dust and dirt. To prevent dew condensation, preheat or precool when
moving to a room with great temperature differences.
5) Exposure to high temperatures or humity will affect the characteristics. Accordingly avoid storage or usage in such conditions.
6) CCD image sensors are precise optical equipment that should not be subject to mechanical shocks.
– 13 –
Page 14
0 ° to 9 °
ILX508A
0.25 -0.05
+0.1
10.16 ± 0.3 (AT STAND OFF)
13
71.0 ± 0.9
24Pin DIP (400mil)
55.482 (7µm × 7926Pixels) 24
10.0 ± 0.5
9.0 ± 0.15
12
68.0 ± 0.15
1
No.1 Pixel
0.8 ± 0.1
1.27
2.29
3.1 ± 0.5
0.46 ± 0.15
2.54 ± 0.25
0.97 ± 0.3
M
1. The height from the bottom to the sensor surface is 1.42 ± 0.3mm.
2. The thickness of the cover glass is 0.8mm, and the refractive index is 1.5.
0.3
Package Outline Unit: mm
9.21 ± 0.8
GOLD PLATING
Ceramic
5.8g
42ALLOY
H
V
5.0 ± 0.5
1st. pin Index
4.0 ± 0.5
PACKAGE MATERIAL
LEAD TREATMENT
PACKAGE WEIGHT
LEAD MATERIAL
PACKAGE STRUCTURE
– 14 –
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