The ILX526A is a rectangular reduction type CCD
linear image sensor designed for bar code POS
hand scanner and optical measuring equipment use.
A built-in timing generator and clock-drivers ensure
single 5V power supply for easy use.
Features
• Number of effective pixels: 3000 pixels
• Pixel size: 7µm × 200µm (7µm pitch)
• Single 5V power supply
• High sensitivity: 300V/(lx · s)
• Built-in timing generator and clock-drivers
• Built-in sample-and-hold circuit
• Electrical shutter function
• Clock frequency: 100kHz (Min), 1MHz (Max)
Absolute Maximum Ratings
• Supply voltageVDD6V
•Operating temperature–10 to +60°C
• Storage temperature–30 to +80°C
Internal Structure
8
9
13
14
ILX526A
22 pin DIP (Cer-DIP)
Readout gate pulse
generator
Shutter pulse
generator
D65
D56
S3000
S2999
Clock pulse
generator
7
φSHUTφROGφCLKT1S/HSW
6
2
Pin Configuration (Top View)
DDVDDGNDVDDGND
22
Clock-drivers
1
Vgg
φCLK
2
NC
3
NC
4
5
NC
6
φROG
φSHUT
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Unit
Input capacity of φCLK pin
Input capacity of φROG pin
Input capacity of φSHUT pin
CφCLK
CφROG
CφROG
—
—
—
– 2 –
10
10
10
—
—
—
pF
pF
pF
Page 3
Electro-optical Characteristics (Note 1)
Ta = 25°C, VDD = 5V, Clock frequency: 500kHz, Light source = 3200K,
IR cut filter: CM-500S (t = 1.0mm), Without S/H mode
ItemSymbolMin.Typ.Max.UnitRemarks
ILX526A
Sensitivity 1
Sensitivity 2
Sensitivity nonuniformity
Saturation output voltage
Dark voltage average
Dark signal nonuniformity
Image lag
Dynamic range
Saturation exposure
5V current consumption
Total transfer efficiency
Output impedance
Offset level
R1
R2
PRNU
VSAT
VDRK
DSNU
IL
DR
SE
IVDD
TTE
ZO
VOS
210
—
—
0.6
—
—
—
—
—
—
92.0
—
—
300
3700
5.0
0.8
2.5
5.0
5.0
320
0.003
7.0
97.0
250
2.5
390
—
10.0
—
6.0
12.0
—
—
—
17.0
—
—
—
V/(lx · s)
V/(lx · s)
%
V
mV
mV
%
—
lx · s
mA
%
Ω
V
Note 2
Note 3
Note 4
—
Note 5
Note 6
Note 7
Note 8
Note 9
—
—
—
Note 10
Note)
1. In accordance with the given electrooptical characteristics, the even black level is defined as the average
value of D24, D26 to D52. The odd black level is defined as the average value of D25 , D27 to D53.
2. For the sensitivity test light is applied with a uniform intensity of illumination.
3. Light source: LED λ = 660nm
4. PRNU is defined as indicated below. Ray incidence conditions are the same as for Note 2.
PRNU = × 100 [%]
(VMAX – VMIN)/2
VAVE
Where the 3000 pixels are divided into blocks of even and odd pixels, respectively, the maximum output of
each block is set to VMAX, the minimum output to VMIN and the average output to VAVE.
5. Integration time is 10ms.
6. The difference between the maximum and average values of the dark output voltage is calculated for even
and odd respectively. Integration time is 10ms.
7. Typical value is used for clock pulse and readout pulse. VOUT = 500mV.
8.DR =
VSAT
VDRK
When optical integration time is shorter, the dynamic range sets wider because dark voltage is in
proportion to optical integration time.
Note) This circuit diagram is the case when internal S/H is not used.
Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for
any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.
– 8 –
Page 9
Example of Representative Characteristics (VDD = 5V, Ta = 25°C)
Dark signal output temperature characteristics (Standard characteristics)
10
5
1
0.5
Output voltage rate
0.1
0.05
0.01
–1001020304060
Ta – Ambient temperature [°C]
50
– 9 –
Page 10
ILX526A
Offset level vs. Temperature characteristics
(Standard characteristics)
5
4
3
2
– Offset level [V]
OS
V
1
0
0 102030405060
–10
∆VOS
∆Ta
Ta – Ambient temperature [°C]
–2.1mV/°C
Supply current vs. VDD characteristics
(Standard characteristics)
14
Ta = 25°C
12
Offset level vs. VDD characteristics
5
4
3
2
– Offset level [V]
OS
V
1
0
4.5
Output voltage vs. Integration time
10
(Standard characteristics)
Ta = 25°C
∆VOS
∆VDD
55.5
VDD [V]
(Standard characteristics)
0.49
10
8
6
– Supply current [mA]
4
VDD
I
2
0
4.5
55.5
VDD [V]
5
Output voltage rate
1
10
50100
τ – Integration time [ms]
– 10 –
Page 11
Notes of Handling
1) Static charge prevention
CCD image sensors are easily damaged by static discharge. Before handling be sure to take the following
protective measures.
a) Either handle bare handed or use non chargeable gloves, clothes or material.
Also use conductive shoes.
b) When handling directly use an earth band.
c) Install a conductive mat on the floor or working table to prevent the generation of static electricity.
d) Ionized air is recommended for discharge when handling CCD image sensor.
e) For the shipment of mounted substrates, use boxes treated for prevention of static charges.
2) Notes on Handling CCD Cer-DIP Packages
The following points should be observed when handling and installing cer-DIP packages.
a) Remain within the following limits when applying static load to the ceramic portion of the package:
(1)Compressive strength:39N/surface (Do not apply load more than 0.7mm inside the outer perimeter of
b) In addition, if a load is applied to the entire surface by a hard component, bending stress may be
generated and the package may fracture, etc., depending on the flatness of the ceramic portion.
Therefore, for installation, either use an elastic load, such as a spring plate, or an adhesive.
c) Be aware that any of the following can cause the glass to crack: because the upper and lower ceramic
layers are shielded by low-melting glass,
(1)Applying repetitive bending stress to the external leads.
(2)Applying heat to the external leads for an extended period of time with soldering iron.
(3)Rapid cooling or heating.
(4)Applying a load or impact to a limited portion of the low-melting glass with a small-tipped tool such as
tweezers.
(5)Prying the upper or lower ceramic layers away at a support point of the low-melting glass.
Note that the preceding notes should also be observed when removing a component from a board after it
has already been soldered.
3) Soldering
a) Make sure the package temperature does not exceed 80°C.
b) Solder dipping in a mounting furnace causes damage to the glass and other defects. Use a grounded 30W
soldering iron and solder each pin in less then 2 seconds. For repairs and remount, cool sufficiently.
c) To dismount an imaging device, do not use a solder suction equipment. When using an electric
desoldering tool, ground the controller. For the control system, use a zero cross type.
– 11 –
Page 12
ILX526A
4) Dust and dirt protection
a) Operate in clean environments.
b) Do not either touch glass plates by hand or have any object come in contact with glass surfaces. Should
dirt stick to a glass surface, blow it off with an air blower. (For dirt stuck through static electricity ionized
air is recommended.)
c) Clean with a cotton bud and ethyl alcohol if the glass surface is grease stained. Be careful not to scratch
the glass.
d) Keep in a case to protect from dust and dirt. To prevent dew condensation, preheat or precool when
moving to a room with great temperature differences.
5) Exposure to high temperatures or humidity will affect the characteristics. Accordingly avoid storage or
usage in such conditions.
6) CCD image sensors are precise optical equipment that should not be subject to mechanical shocks.
7) Normal output signal is not obtained immediately after device switch on.
– 12 –
Page 13
0° to 9°
ILX526A
0.25
12
22pin DIP (400mil)
32.0 ± 0.5
21.0 (7µm × 3000Pixels)
(AT STAND OFF)
10.16
10.0 ± 0.5
9.0
No.1 Pixel
11
30.6
1. The height from the bottom to the sensor surface is 1.61 ± 0.3mm.
2. The thickness of the cover glass is 0.7mm, and the refractive index is 1.5.
M
3.4 ± 0.5
0.3
2.7
0.51
Cer-DIP
42 ALLOY
TIN PLATING
3.0g
2.54
Package OutlineUnit: mm
5.5 ± 0.8
22
H
V
1
5.0 ± 0.5
4.0 ± 0.5
PACKAGE MATERIAL
LEAD TREATMENT
PACKAGE WEIGHT
LEAD MATERIAL
PACKAGE STRUCTURE
– 13 –
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