Sharp PC812, PC812A, PC812B, PC812C Datasheet

PC812

PC812

■Features

1.High noise reduction

( Common mode rejection voltage

V CM : TYP. 1.5kV at dV/dt = 2kV/ μ s, R L = 470 Ω , V np = 100mV )

2.High current transfer ratio

( CTR : MIN. 90% at I F = 5mA, V CE = 5V)

3.High isolation voltage between input and output ( Viso : 5 000V rms )

4.Compact dual-in-line package

■Applications

1.Motor-control circuits

2.Computer terminals

3.System appliances, measuring instruments

4.Signal transmission between circuits of different potentials and impedances

High Noise Resistance Type

Photocoupler

■ Outline Dimensions						( Unit : mm)
					Internal connection
	mark		2.54±	0.25	diagram
		4			4	3
	rank			3
			PC812	± 0.5
Anode mark	CTR
		1		6.5	1	2
				2	Anode	3	Emitter
	0.9 ± 0.2			1
				2	Cathode	4	Collector
	1.2 ± 0.3
			4.58 ± 0.5		7.62 ± 0.3
	0.5TYP.	± 0.5
		3.5
		± 0.5
		3.0			θ		θ
				0.5 ± 0.1
					θ = 0 to 13 ˚		0.26 ± 0.1

■ Absolute Maximum Ratings		(Ta= 25˚C)
Parameter	Symbol	Rating	Unit
Forward current	IF	50	mA
*1Peak forward current	I FM	1	A
Input	V R	6	V
Reverse voltage
Power dissipation	P	70	mW
Collector-emitter voltage	V CEO	35	V
Emitter-collector voltage	V ECO	6	V
Output	IC	50	mA
Collector current
Collector power dissipation	P C	150	mW
Total power dissipation	P tot	200	mW
*2Isolation voltage	V iso	5 000	V rms
Operating temperature	T opr	- 30 to + 100	˚C
Storage temperature	T stg	- 55 to + 125	˚C
*3Soldering temperature	T sol	260	˚C

*1 Pulse width <=100 μ s, Duty ratio : 0.001 *2 40 to 60% RH, AC for 1 minute

*3 For 10 seconds

“In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

									PC812
■ Electro-optical Characteristics								(Ta = 25˚C)
		Parameter		Symbol	Conditions	MIN.	T Y P .	M A X .		Unit
		Forward voltage		V F	IF = 20mA	-	1.2	1.4		V
Input		Peak forward voltage		V F M	IF M = 0.5A	-	-	3.0		V
		Reverse current		IR	V R = 4V	-	-	10		μ A
		Terminal capacitance		Ct	V = 0, f = 1kHz	-	30	200		p F
Output		Collector dark current		ICEO	V CE = 20V, IF = 0	-	-	10 - 7		A
	*4 Current transfer ratio			C T R	IF = 5 mA, VCE = 5V	90	-	480		%
		Collector-emitter saturation voltage		V CE ( sat )	IF = 20mA, IC = 1mA	-	0.1	0.2		V
Transfer		Isolation resistance		R ISO	DC500V, 40 to 60% RH	5 x 1010	1011	-		Ω
		Floating capacitance		Cf	V = 0, f = 1MHz	-	0.6	1.0		p F
charac-
		Cut-off frequency		fc	VCE = 5V, IC = 2mA, RL = 100 Ω, - 3dB	15	80	-		k H z
teristics
	*4	Response time	Rise time	t r	VCE = 2V, IC = 2mA, RL = 100 Ω	-	4	18		μ s
			Fall time	tf		-	5	20		μ s
	*5 Common mode rejection voltage			V CM	dV/dt = 2kV/ μ s, RL = 470 Ω, Vnp = 100mV, IF = 0	-	1.5	-		k V

*4 Classification table of current transfer ratio is shown below.

	Model	Rank	CTR ( % )	t r ( μ s)		tf ( μ s)
	No.	mark		T Y P . M A X . T Y P . M A X .
	PC812A	A	90 to 180	3	14	4	16
	PC812B	B	150 to 180	4	16	5	18
	PC812C	C	240 to 480	5	18	7	20
	PC812	A , B o r C	90 to 480	4	18	5	20
					V CE = 2V
	Measurement		I = 5mA		IC = 2mA
	conditions		VCE = 5V		R L = 100 Ω
			Ta = 25˚C		Ta = 25˚C

*5 Test Circuit for VCM

RL

VCC = 9V

Vnp

VCM

VCM : Common mode rejection

Test condition

voltage

Vnp = 100mV, RL = 470 Ω

(higher value of pulse wave)

dV/dt = 2kV/ μ s, IF = 0

dV/dt : Rising factor of voltage

Fig. 1 Forward Current vs.

Ambient Temperature

	60
	50
)
mA	40
(
F
I	30
current
	20
Forward
	10
	0
	- 30	0	25	50	75	100	125
		Ambient temperature T a (˚C)

Fig. 2 Collector Power Dissipation vs. Ambient Temperature

	200
)
mW
(
C	150
P
dissipation	100
power
Collector	50
	0
	- 30	0	25	50	75	100	125
		Ambient temperature T a				( ˚C )