Sharp PC3H710NIP, PC3H711NIP, PC3H712NIP, PC3H715NIP, PC3Q710NIP Datasheet

PC3H71X NIP Series/PC3Q71X NIP Series

PC3H71X NIP Series

PC3Q71X NIP Series

■ Features

1.Low input current type(IF=0.5mA)

2.High resistance to noise due to high common rejection voltage (CMR:MIN. 10kV/μs)

3.Mini-flat package

4.Isolation voltage (Viso:2.5kVrms)

5.Recognized by UL, file No. E64380

■ Applications

1.Programmable controllers

2.Facsimiles

3.Telephones

■ Rank Table

	Model No.	Rank mark	Ic (mA)	Conditions
	PC3H710NIP	A, B or no mark	0.5 to 3.5	IF=0.5mA
	PC3H711NIP	A	0.7 to 1.75
				VCE=5V
	PC3H712NIP	B	1.0 to 2.5
				Ta=25°C
	PC3H715NIP	A or B	0.7 to 2.5
	Model No.	Rank mark	Ic (mA)	Conditions
	PC3Q710NIP	A or no mark	0.5 to 3.0	IF=0.5mA
				VCE=5V
	PC3Q711NIP
		A	1.0 to 2.5	Ta=25°C

■ Absolute Maximum Ratings				(Ta=25°C)
	Parameter	Symbol	Rating		Unit
	Forward current	IF	10		mA
Input	*1 Peak forward current	IFM	200		mA
	Reverse voltage	VR	6		V
	Power dissipation	P	15		mW
	Collector-emitter voltage	VCEO	70		V
Output	Emitter-collector voltage	VECO	6		V
	Collector current	IC	50		mA
	Collector power dissipation	PC	150		mW
	Total power dissipation	Ptot	170		mW
	Operating temperature	Topr	−30 to +100		°C
	Storage temperature	Tstg	−40 to +125		°C
	*2 Isolation voltage	Viso	2.5		kVrms
	*3 Soldering temperature	Tsol	260		°C

*1 Pulse width<=100μs, Duty ratio=0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s

Low Input Current Type

Photocoupler

■ Outline Dimensions

(Unit : mm)

PC3H71xNIP Series									Internal connection
	Anode mark								diagram
									4		3
			1				4
±0.3	±0.25
													1	Anode
														Cathode
2.6	1.27		H 7 1										2
													3	Emitter
			2				3	±0.1
			4.4±0.2										4	Collector
								0.4	1		2
			5.3±0.3									Epoxy resin
		±0.05						±0.2
			0.2		0.5+0.4			2.0
								0.1
			7.0−+0.70.2			−0.2		±
								0.1
PC3Q71xNIP Series
			10.3±0.3						Internal connection
			1.27±0.25						diagram
									16	15 14		13 12		11 10		9
	16			9
			P C 3 Q 7 1			±0.2
						4.4			1	2	3	4	5	6	7	8
									1	3	5	7	Anode
							±0.1		2	4	6	8	Cathode
	1			8		0.4			9	11	13	15	Emitter
									10	12	14	16	Collector
			Primary side mark
±0.2								C0.4
			Epoxy resin					(Input side)			5.3±0.3
	2.6
								0.05
								±
								0.2
												0.5+0.4
±0.1				6	°								−0.2
											7.0−+0.70.2
	0.1

0.2mm or more

Soldering area

Notice	In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
	devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet	Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/

PC3H71X NIP Series/PC3Q71X NIP Series

	■ Electro-optical Characteristics								(Ta=25°C)
		Parameter		Symbol	Conditions	MIN.	TYP.	MAX.	Unit
	Input	Forward voltage		VF	IF=10mA	−	1.2	1.4	V
		Reverse current		IR	VR=4V	−	−	10	μA
		Terminal capacitance		Ct	V=0, f=1kHz	−	30	250	pF
	Output	Collector dark current		ICEO	VCE=50V, IF=0	−	−	100	nA
		Collector-emitter breakdown voltage		BVCEO	IC=0.1mA, IF=0	70	−	−	V
		Emitter-collector breakdown voltage		BVECO	IE=10μA, IF=0	6	−	−	V
		Collector	PC3H71XNIP Series	IC	IF=0.5mA, VCE=5V	0.5	−	3.5	mA
	characteristics	current	PC3Q71XNIP Series					3.0
		Collector-emitter saturation voltage		VCE (sat)	IF=10mA, IC=1mA	−	−	0.2	V
		Isolation resistance		RISO	DC500V 40 to 60%RH	5×1010	1×1011	−	Ω
		Floating capacitance		Cf	V=0, f=1MHz	−	0.6	1.0	pF
	Transfer		Rise time	tr		−	4	18	μs
		*1 Common mode rejection voltage		CMR	Ta=25°C, RL=470Ω, VCM=1.5kV (peak),	10	−	−	kV/μs
		Response time		tf	VCE=2V, IC=2mA, RL=100Ω	−	3	18	μs
			Fall time
					IF=0mA, VCC=9V, Vnp=100mV
	*1 Refer to Fig.1.

Fig.1 Test Circuit for Common Mode Rejection Voltage

			(dV/dt)
			VCM
RL	VCC		1)	Vnp
	Vnp		Vcp
	é	VCM : High wave	VO
	ê	pulse	(Vcp Nearly = dV/dt´Cf´RL)
VCM	ê
	ê RL=470W		1) Vcp : Voltage which is generated by displacement current in floating
	ë VCC=9V		capacitance between primary and secondary side.

Fig.2 Forward Current vs. Ambient Temperature

(mA)	10
F
current I
Forward	5
	0
	-30		0	25		50		75		100		125

Ambient temperature Ta (°C)

Fig.3 Diode Power Dissipation vs. Ambient Temperature

P (mW)	15
power dissipation	10
Diode	5
	0
	-30		0	25		50		75		100		125

Ambient temperature Ta (°C)