Sharp PC81710NSZ, PC81711NSZ, PC81712NSZ, PC81713NSZ, PC81715NSZ Datasheet

PC8171XNSZ Series

PC8171X NSZ Series

■ Features

1.Low input current type(IF=0.5mA)

2.High resistance to noise due to high common rejection voltage (CMR:MIN. 10kV/μs)

3.Compact dual-in line package

4.Isolation voltage(Viso:5kVrms)

5.Recognized by UL, file No. E64380

■ Applications

1.Programmable controllers

2.Facsimiles

3.Telephones

■ Rank Table

Model No.	Rank mark	Ic (mA)	Conditions
PC81710NSZ	A, B, C or no mark	0.5 to 3.0
PC81711NSZ	A	0.6 to 1.5	IF=0.5mA
PC81712NSZ	B	0.8 to 2.0
PC81713NSZ	C	1.0 to 2.5	VCE=5V
PC81715NSZ	A or B	0.6 to 2.0	Ta=25°C
PC81716NSZ	B or C	0.8 to 2.5
PC81718NSZ	A, B or C	0.6 to 2.5

■ Absolute Maximum Ratings					(Ta=25°C)
		Parameter	Symbol	Rating		Unit
		Forward current	IF	10		mA
	Input	*1 Peak forward current	IFM	200		mA
		Reverse voltage	VR	6		V
		Power dissipation	P	15		mW
		Collector-emitter voltage	VCEO	70		V
	Output	Emitter-collector voltage	VECO	6		V
		Collector current	IC	50		mA
		Collector power dissipation	PC	150		mW
		Total power dissipation	Ptot	170		mW
		Operating temperature	Topr	−30 to +100		°C
		Storage temperature	Tstg	−55 to +125		°C
		*2 Isolation voltage	Viso	5		kVrms
		*3 Soldering temperature	Tsol	260		°C

*1 Pulse width<=100μs, Duty ratio=0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s

Low Input Current Type

Photocoupler

■ Outline Dimensions

(Unit : mm)

Anode mark
±0.3	±0.2
1.2	0.6
	1		4	±0.5
	8 1 7 1
				4.58
	2		3
	6.5	±0.5	0.25
			±
			2.54
	7.62±0.3					4.58±0.5
						±0.5	TYP.
						3.5	0.5
	Epoxy resin				±0.5	±0.5
					2.7	3.0
	θ	0.26±0.1	θ			0.5±0.1
	θ : 0 to 13°
		Internal connection diagram
	1			4	1	Anode
					2	Cathode
	2			3	3	Emitter
					4	Collector

Notice	In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
	devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet	Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/

PC8171XNSZ Series

	■ Electro-optical Characteristics								(Ta=25°C)
		Parameter		Symbol	Conditions	MIN.	TYP.	MAX.	Unit
	Input	Forward voltage		VF	IF=10mA	−	1.2	1.4	V
		Reverse current		IR	VR=4V	−	−	10	μA
		Terminal capacitance		Ct	V=0, f=1kHz	−	30	250	pF
	Output	Collector dark current		ICEO	VCE=50V, IF=0	−	−	100	nA
		Collector-emitter breakdown voltage		BVCEO	IC=0.1mA, IF=0	70	−	−	V
		Emitter-collector breakdown voltage		BVECO	IE=10μA, IF=0	6	−	−	V
	characteristics	Collector current		IC	IF=0.5mA, VCE=5V	0.5	−	3.0	mA
			Rise time	tr		−	4	18	μs
		Collector-emitter saturation voltage		VCE (sat)	IF=10mA, IC=1mA	−	−	0.2	V
		Isolation resistance		RISO	DC500V 40 to 60%RH	5×1010	1×1011	−	Ω
		Floating capacitance		Cf	V=0, f=1MHz	−	0.6	1.0	pF
	Transfer	Response time			VCE=2V, IC=2mA, RL=100Ω
				CMR		10	−	−	kV/μs
		*1 Common mode rejection voltage			Ta=25°C, RL=470Ω, VCM=1.5kV (peak),
			Fall time	tf		−	3	18	μs
					IF=0mA, VCC=9V, Vnp=100mV
	*1 Refer to Fig.1.

Fig.1 Test Circuit for Common Mode Rejection Voltage

			(dV/dt)
			VCM
RL	VCC		1)	Vnp
	Vnp		Vcp
	é	VCM : High wave	VO
	ê	pulse	(Vcp Nearly = dV/dt´Cf´RL)
	ê
VCM	ê RL=470W		1) Vcp : Voltage which is generated by displacement current in floating
	ë VCC=9V		capacitance between primary and secondary side.

Fig.2 Forward Current vs. Ambient Temperature

(mA)	10
F
current I
Forward	5
	0
	-30		0	25		50		75		100		125

Ambient temperature Ta (°C)

Fig.3 Diode Power Dissipation vs. Ambient Temperature

P (mW)	15
power dissipation	10
Diode	5
	0
	-30		0	25		50		75		100		125

Ambient temperature Ta (°C)