Loading...NXP PLVA650A, PLVA653A, PLVA656A, PLVA659A, PLVA662A Schematic [ru]
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DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
PLVA6xxA series
Low-voltage avalanche regulator diodes
Product data sheet |
2004 Jan 14 |
Supersedes data of 1999 May 25 |
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NXP Semiconductors |
Product data sheet |
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Low-voltage avalanche regulator diodes |
PLVA6xxA series |
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FEATURES
•Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series
•Hard breakdown knee
•Low noise: approximately 1⁄10 of conventional series
•Total power dissipation: max. 250 mW
•Small tolerances of VZ
•Working voltage range: nominal 5.00 to 6.80 V
•Non-repetitive peak reverse power dissipation: maximal 30 W.
APPLICATIONS
•Low current, low power, low noise applications
•CMOS RAM back-up circuits
•Voltage stabilizers
•Voltage limiters
•Smoke detector relays.
DESCRIPTION
High performance voltage regulator diodes in small SOT23 plastic SMD packages.
The series consists of PLVA650A to PLVA668A.
MARKING
TYPE NUMBER |
MARKING CODE(1) |
PLVA650A |
*9A |
PLVA653A |
*9B |
PLVA656A |
*9C |
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PLVA659A |
*9D |
PLVA662A |
*9E |
PLVA665A |
*9F |
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PLVA668A |
*9G |
Note
1.* = p: Made in Hong Kong.
*= t: Made in Malaysia.
*= W: Made in China.
PINNING
PIN |
DESCRIPTION |
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1 |
anode |
2 |
not connected |
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3 |
cathode |
handbook, halfpage |
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2 |
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Top view |
MAM243 |
Fig.1 Simplified outline (SOT23) and symbol.
2004 Jan 14 |
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NXP Semiconductors |
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Product data sheet |
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Low-voltage avalanche regulator diodes |
PLVA6xxA series |
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ORDERING INFORMATION |
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TYPE |
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PACKAGE |
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NUMBER |
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NAME |
DESCRIPTION |
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VERSION |
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PLVA6xxA |
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plastic surface mounted package; 3 leads |
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SOT23 |
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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IF |
continuous forward current |
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250 |
mA |
IZRM |
repetitive peak working current |
tp = 100 |
μs; δ = 10% |
− |
250 |
mA |
PZSM |
non-repetitive peak reverse power dissipation |
tp = 100 |
μs; Tj = 150 °C |
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30 |
W |
Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
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250 |
mW |
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Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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150 |
°C |
Note
1. Device mounted on an FR4 printed circuit-board.
2004 Jan 14 |
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