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SOD323F
BZX84J series
Single Zener diodes
Rev. 2 — 1 August 2011 Product data sheet
1.Product profile
1.1General description
General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Non-repetitive peak reverse power dissipation: 40 W
Total power dissipation: 550 mW
AEC-Q101 qualified
Small plastic package suitable for surface-mounted design
Wide working voltage range: nominal 2.4 V to 75 V (E24 range)
Two tolerance series: 2 % and 5 %
Low differential resistance
1.3Applications
General regulation functions
1.4Quick reference data
Table 1. |
Quick reference data |
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Symbol |
Parameter |
Conditions |
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Min |
Typ |
Max |
Unit |
VF |
forward voltage |
IF = 100 mA |
[1] |
- |
- |
1.1 |
V |
PZSM |
non-repetitive peak reverse |
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[2] |
- |
- |
40 |
W |
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power dissipation |
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[1]Pulse test: tp 300 s; 0.02.
[2]tp = 100 s; square wave; Tj = 25 C prior to surge
2.Pinning information
Table 2. |
Pinning |
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Pin |
Description |
Simplified outline |
Symbol |
1 |
cathode |
[1] |
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2 |
anode |
1 |
2 |
2 |
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1 |
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006aaa152 |
[1]The marking bar indicates the cathode.
NXP Semiconductors |
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BZX84J series |
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Single Zener diodes |
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3. Ordering information |
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Table 3. Ordering information |
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Type number |
Package |
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Name |
Description |
Version |
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BZX84J-B2V4 to B |
SC-90 |
plastic surface-mounted package; 2 leads |
SOD323F |
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ZX84J-C75[1] |
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[1]The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4. Marking codes
Type number |
Marking |
Type number |
Marking |
Type number |
Marking |
Type number |
Marking |
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code |
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code |
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code |
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code |
BZX84J-B2V4 |
SL |
BZX84J-B15 |
SC |
BZX84J-C2V4 |
U3 |
BZX84J-C15 |
TV |
BZX84J-B2V7 |
SM |
BZX84J-B16 |
SD |
BZX84J-C2V7 |
U4 |
BZX84J-C16 |
TW |
BZX84J-B3V0 |
ST |
BZX84J-B18 |
SE |
BZX84J-C3V0 |
U9 |
BZX84J-C18 |
TX |
BZX84J-B3V3 |
SU |
BZX84J-B20 |
SF |
BZX84J-C3V3 |
UA |
BZX84J-C20 |
TY |
BZX84J-B3V6 |
SV |
BZX84J-B22 |
SG |
BZX84J-C3V6 |
UB |
BZX84J-C22 |
TZ |
BZX84J-B3V9 |
SW |
BZX84J-B24 |
SH |
BZX84J-C3V9 |
UC |
BZX84J-C24 |
U1 |
BZX84J-B4V3 |
SZ |
BZX84J-B27 |
SK |
BZX84J-C4V3 |
UF |
BZX84J-C27 |
U2 |
BZX84J-B4V7 |
TA |
BZX84J-B30 |
SN |
BZX84J-C4V7 |
UG |
BZX84J-C30 |
U5 |
BZX84J-B5V1 |
TD |
BZX84J-B33 |
SP |
BZX84J-C5V1 |
UL |
BZX84J-C33 |
U6 |
BZX84J-B5V6 |
TE |
BZX84J-B36 |
SR |
BZX84J-C5V6 |
UM |
BZX84J-C36 |
U7 |
BZX84J-B6V2 |
TH |
BZX84J-B39 |
SS |
BZX84J-C6V2 |
UR |
BZX84J-C39 |
U8 |
BZX84J-B6V8 |
TK |
BZX84J-B43 |
SX |
BZX84J-C6V8 |
US |
BZX84J-C43 |
UD |
BZX84J-B7V5 |
TM |
BZX84J-B47 |
SY |
BZX84J-C7V5 |
UU |
BZX84J-C47 |
UE |
BZX84J-B8V2 |
TN |
BZX84J-B51 |
TB |
BZX84J-C8V2 |
UV |
BZX84J-C51 |
UH |
BZX84J-B9V1 |
TP |
BZX84J-B56 |
TC |
BZX84J-C9V1 |
UW |
BZX84J-C56 |
UK |
BZX84J-B10 |
S8 |
BZX84J-B62 |
TF |
BZX84J-C10 |
TR |
BZX84J-C62 |
UN |
BZX84J-B11 |
S9 |
BZX84J-B68 |
TG |
BZX84J-C11 |
TS |
BZX84J-C68 |
UP |
BZX84J-B12 |
SA |
BZX84J-B75 |
TL |
BZX84J-C12 |
TT |
BZX84J-C75 |
UT |
BZX84J-B13 |
SB |
- |
- |
BZX84J-C13 |
TU |
- |
- |
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BZX84J_SER |
All information provided in this document is subject to legal disclaimers. |
© NXP B.V. 2011. All rights reserved. |
Product data sheet |
Rev. 2 — 1 August 2011 |
2 of 13 |
NXP Semiconductors |
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BZX84J series |
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Single Zener diodes |
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5. Limiting values |
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Table 5. |
Limiting values |
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In accordance with the Absolute Maximum Rating System (IEC 60134). |
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Symbol |
Parameter |
Conditions |
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Min |
Max |
Unit |
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IF |
forward current |
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- |
250 |
mA |
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IZSM |
non-repetitive peak reverse |
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[1] |
- |
see |
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current |
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Table 8 |
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and 9 |
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PZSM |
non-repetitive peak reverse |
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[1] |
- |
40 |
W |
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power dissipation |
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Ptot |
total power dissipation |
Tamb 25 C |
[2] |
- |
550 |
mW |
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Tj |
junction temperature |
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- |
150 |
C |
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Tamb |
ambient temperature |
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55 |
+150 |
C |
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Tstg |
storage temperature |
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65 |
+150 |
C |
[1]tp = 100 s; square wave; Tj = 25 C prior to surge
[2]Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6.Thermal characteristics
Table 6. |
Thermal characteristics |
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Symbol |
Parameter |
Conditions |
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Min |
Typ |
Max |
Unit |
Rth(j-a) |
thermal resistance from |
in free air |
[1] |
- |
- |
230 |
K/W |
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junction to ambient |
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Rth(j-sp) |
thermal resistance from |
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[2] |
- |
- |
55 |
K/W |
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junction to solder point |
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[1]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[2]Soldering point of cathode tab.
7.Characteristics
Table 7. |
Characteristics |
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Tj = 25 C unless otherwise specified. |
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Symbol |
Parameter |
Conditions |
Min |
Typ |
Max |
Unit |
VF |
forward voltage |
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[1] |
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IF = 10 mA |
- |
- |
0.9 |
V |
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IF = 100 mA |
- |
- |
1.1 |
V |
[1]Pulse test: tp 300 s; 0.02.
BZX84J_SER |
All information provided in this document is subject to legal disclaimers. |
© NXP B.V. 2011. All rights reserved. |
Product data sheet |
Rev. 2 — 1 August 2011 |
3 of 13 |
NXP Semiconductors |
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BZX84J series |
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Single Zener diodes |
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Table 8. Characteristics per type; BZX84J-B2V4 to BZX84J-C24 |
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Tj = 25 C unless otherwise specified. |
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BZX84J- |
Sel |
Working |
Differential |
Reverse |
Temperature |
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Diode |
Non-repetitive |
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xxx |
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voltage |
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resistance |
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current |
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coefficient |
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capacitance |
peak reverse |
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VZ (V) |
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rdif ( ) |
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IR ( A) |
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SZ (mV/K) |
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Cd (pF)[1] |
current |
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IZSM (A)[2] |
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IZ = 5 mA |
IZ = 1 mA |
IZ = 5 mA |
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IZ = 5 mA |
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Min |
Max |
Max |
Max |
Max |
VR (V) |
Min |
Max |
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Max |
Max |
2V4 |
B |
2.35 |
2.45 |
400 |
100 |
50 |
1 |
3.5 |
0 |
450 |
12 |
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C |
2.2 |
2.6 |
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2V7 |
B |
2.65 |
2.75 |
450 |
100 |
20 |
1 |
3.5 |
0 |
440 |
12 |
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C |
2.5 |
2.9 |
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3V0 |
B |
2.94 |
3.06 |
500 |
95 |
10 |
1 |
3.5 |
0 |
425 |
12 |
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C |
2.8 |
3.2 |
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3V3 |
B |
3.23 |
3.37 |
500 |
95 |
5 |
1 |
3.5 |
0 |
410 |
12 |
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C |
3.1 |
3.5 |
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3V6 |
B |
3.53 |
3.67 |
500 |
90 |
5 |
1 |
3.5 |
0 |
390 |
12 |
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C |
3.4 |
3.8 |
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3V9 |
B |
3.82 |
3.98 |
500 |
90 |
3 |
1 |
3.5 |
0 |
370 |
12 |
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C |
3.7 |
4.1 |
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4V3 |
B |
4.21 |
4.39 |
600 |
90 |
3 |
1 |
3.5 |
0 |
350 |
12 |
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C |
4 |
4.6 |
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4V7 |
B |
4.61 |
4.79 |
500 |
80 |
3 |
2 |
3.5 |
0.2 |
325 |
12 |
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C |
4.4 |
5 |
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5V1 |
B |
5 |
5.2 |
480 |
60 |
2 |
2 |
2.7 |
1.2 |
300 |
12 |
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C |
4.8 |
5.4 |
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5V6 |
B |
5.49 |
5.71 |
400 |
40 |
1 |
2 |
2 |
2.5 |
275 |
12 |
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C |
5.2 |
6 |
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6V2 |
B |
6.08 |
6.32 |
150 |
10 |
3 |
4 |
0.4 |
3.7 |
250 |
12 |
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C |
5.8 |
6.6 |
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6V8 |
B |
6.66 |
6.94 |
80 |
15 |
2 |
4 |
1.2 |
4.5 |
215 |
12 |
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C |
6.4 |
7.2 |
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7V5 |
B |
7.35 |
7.65 |
80 |
10 |
1 |
5 |
2.5 |
5.3 |
170 |
4 |
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C |
7 |
7.9 |
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8V2 |
B |
8.04 |
8.36 |
80 |
10 |
0.7 |
5 |
3.2 |
6.2 |
150 |
4 |
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C |
7.7 |
8.7 |
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9V1 |
B |
8.92 |
9.28 |
100 |
10 |
0.5 |
6 |
3.8 |
7 |
120 |
3 |
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C |
8.5 |
9.6 |
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10 |
B |
9.8 |
10.2 |
150 |
10 |
0.2 |
7 |
4.5 |
8 |
110 |
3 |
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C |
9.4 |
10.6 |
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11 |
B |
10.8 |
11.2 |
150 |
10 |
0.1 |
8 |
5.4 |
9 |
108 |
2.5 |
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C |
10.4 |
11.6 |
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12 |
B |
11.8 |
12.2 |
150 |
10 |
0.1 |
8 |
6 |
10 |
105 |
2.5 |
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C |
11.4 |
12.7 |
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BZX84J_SER |
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All information provided in this document is subject to legal disclaimers. |
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© NXP B.V. 2011. All rights reserved. |
|||||
Product data sheet |
Rev. 2 — 1 August 2011 |
4 of 13 |
NXP Semiconductors |
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BZX84J series |
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Single Zener diodes |
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Table 8. Characteristics per type; BZX84J-B2V4 to BZX84J-C24 …continued |
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Tj = 25 C unless otherwise specified. |
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BZX84J- |
Sel |
Working |
Differential |
Reverse |
Temperature |
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Diode |
Non-repetitive |
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xxx |
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voltage |
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resistance |
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current |
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coefficient |
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capacitance |
peak reverse |
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VZ (V) |
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rdif ( ) |
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IR ( A) |
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SZ (mV/K) |
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Cd (pF)[1] |
current |
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IZSM (A)[2] |
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IZ = 5 mA |
IZ = 1 mA |
IZ = 5 mA |
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IZ = 5 mA |
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Min |
Max |
Max |
Max |
Max |
VR (V) |
Min |
Max |
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Max |
Max |
13 |
B |
12.7 |
13.3 |
170 |
10 |
0.1 |
8 |
7 |
11 |
103 |
2.5 |
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C |
12.4 |
14.1 |
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15 |
B |
14.7 |
15.3 |
200 |
15 |
0.05 |
10.5 |
9.2 |
13 |
99 |
2 |
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C |
13.8 |
15.6 |
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16 |
B |
15.7 |
16.3 |
200 |
20 |
0.05 |
11.2 |
10.4 |
14 |
97 |
1.5 |
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C |
15.3 |
17.1 |
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18 |
B |
17.6 |
18.4 |
225 |
20 |
0.05 |
12.6 |
12.4 |
16 |
93 |
1.5 |
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C |
16.8 |
19.1 |
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20 |
B |
19.6 |
20.4 |
225 |
20 |
0.05 |
14 |
14.4 |
18 |
88 |
1.5 |
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C |
18.8 |
21.2 |
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22 |
B |
21.6 |
22.4 |
250 |
25 |
0.05 |
15.4 |
16.4 |
20 |
84 |
1.25 |
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C |
20.8 |
23.3 |
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24 |
B |
23.5 |
24.5 |
250 |
30 |
0.05 |
16.8 |
18.4 |
22 |
80 |
1.25 |
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C |
22.8 |
25.6 |
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[1]f = 1 MHz; VR = 0 V
[2]tp = 100 s; square wave; Tj = 25 C prior to surge
BZX84J_SER |
All information provided in this document is subject to legal disclaimers. |
© NXP B.V. 2011. All rights reserved. |
Product data sheet |
Rev. 2 — 1 August 2011 |
5 of 13 |
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