DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D109
BZV49 series
Voltage regulator diodes
Product data sheet |
2005 Feb 03 |
Supersedes data of 1999 May 11 |
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NXP Semiconductors |
Product data sheet |
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Voltage regulator diodes |
BZV49 series |
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•Total power dissipation: max. 1 W
•Tolerance series: approx. ±5%
•Working voltage range: nom. 2.4 to 75 V (E24 range)
•Non-repetitive peak reverse power dissipation: max. 40 W.
• General regulation functions.
Medium-power voltage regulator diodes in a SOT89 plastic SMD package.
The diodes are available in the normalized E24 approx.
±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZV49-C2V4 to BZV49-C75).
PIN |
DESCRIPTION |
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1 |
anode |
2 |
cathode |
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3 |
anode |
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1 |
3 |
3 |
2 |
1 |
2 |
sym096 |
Fig.1 Simplified outline (SOT89) and symbol.
TYPE NUMBER |
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PACKAGE |
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NAME |
DESCRIPTION |
VERSION |
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BZV49-C2V4 to |
SC-62 |
plastic surface mounted package; collector pad for good heat |
SOT89 |
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BZV49-C75 |
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transfer; 3 leads |
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note 1 |
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Note |
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1. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (E24 range).
TYPE |
MARKING |
TYPE |
MARKING |
TYPE |
MARKING |
TYPE |
MARKING |
NUMBER |
CODE |
NUMBER |
CODE |
NUMBER |
CODE |
NUMBER |
CODE |
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BZV49-C2V4 |
2Y4 |
BZV49-C6V2 |
6Y2 |
BZV49-C16 |
16Y |
BZV49-C43 |
43Y |
BZV49-C2V7 |
2Y7 |
BZV49-C6V8 |
6Y8 |
BZV49-C18 |
18Y |
BZV49-C47 |
47Y |
BZV49-C3V0 |
3Y0 |
BZV49-C7V5 |
7Y5 |
BZV49-C20 |
20Y |
BZV49-C51 |
51Y |
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BZV49-C3Y3 |
3Y3 |
BZV49-C8V2 |
8Y2 |
BZV49-C22 |
22Y |
BZV49-C56 |
56Y |
BZV49-C3V6 |
3Y6 |
BZV49-C9V1 |
9Y1 |
BZV49-C24 |
24Y |
BZV49-C62 |
62Y |
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BZV49-C3V9 |
3Y9 |
BZV49-C10 |
10Y |
BZV49-C27 |
27Y |
BZV49-C68 |
68Y |
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BZV49-C4V3 |
4Y3 |
BZV49-C11 |
11Y |
BZV49-C30 |
30Y |
BZV49-C75 |
75Y |
BZV49-C4V7 |
4Y7 |
BZV49-C12 |
12Y |
BZV49-C33 |
33Y |
− |
− |
BZV49-C5V1 |
5Y1 |
BZV49-C13 |
13Y |
BZV49-C36 |
36Y |
− |
− |
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BZV49-C5V6 |
5Y6 |
BZV49-C15 |
15Y |
BZV49-C39 |
39Y |
− |
− |
2005 Feb 03 |
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NXP Semiconductors |
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Product data sheet |
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Voltage regulator diodes |
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BZV49 series |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 60134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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MAX. |
UNIT |
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IF |
continuous forward current |
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250 |
mA |
IZSM |
non-repetitive peak reverse current |
tp = 100 μs; square wave; |
see Table |
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Tj = 25 °C prior to surge |
“Per type” |
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Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
− |
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1 |
W |
PZSM |
non-repetitive peak reverse power |
tp = 100 μs; square wave; |
− |
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40 |
W |
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dissipation |
Tj = 25 °C prior to surge; see Fig.2 |
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Tstg |
storage temperature |
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−65 |
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+150 |
°C |
Tj |
junction temperature |
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− |
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150 |
°C |
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
Total series
Tamb = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MAX. |
UNIT |
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VF |
forward voltage |
IF = 50 mA; see Fig.3 |
1 |
V |
2005 Feb 03 |
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