NXP BZV49-C10, BZV49-C11, BZV49-C12, BZV49-C13, BZV49-C15 Schematic [ru]

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NXP BZV49-C10, BZV49-C11, BZV49-C12, BZV49-C13, BZV49-C15 Schematic

DISCRETE SEMICONDUCTORS

DATA SHEET

ook, halfpage

M3D109

BZV49 series

Voltage regulator diodes

Product data sheet

2005 Feb 03

Supersedes data of 1999 May 11

 

NXP Semiconductors

Product data sheet

 

 

 

 

Voltage regulator diodes

BZV49 series

 

 

 

 

FEATURES

Total power dissipation: max. 1 W

Tolerance series: approx. ±5%

Working voltage range: nom. 2.4 to 75 V (E24 range)

Non-repetitive peak reverse power dissipation: max. 40 W.

APPLICATIONS

• General regulation functions.

DESCRIPTION

Medium-power voltage regulator diodes in a SOT89 plastic SMD package.

The diodes are available in the normalized E24 approx.

±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZV49-C2V4 to BZV49-C75).

ORDERING INFORMATION

PINNING

PIN

DESCRIPTION

 

 

1

anode

2

cathode

 

 

3

anode

 

 

1

3

3

2

1

2

sym096

Fig.1 Simplified outline (SOT89) and symbol.

TYPE NUMBER

 

PACKAGE

 

 

 

 

NAME

DESCRIPTION

VERSION

 

 

 

 

 

BZV49-C2V4 to

SC-62

plastic surface mounted package; collector pad for good heat

SOT89

BZV49-C75

 

transfer; 3 leads

 

note 1

 

 

 

Note

 

 

 

1. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (E24 range).

MARKING

TYPE

MARKING

TYPE

MARKING

TYPE

MARKING

TYPE

MARKING

NUMBER

CODE

NUMBER

CODE

NUMBER

CODE

NUMBER

CODE

 

 

 

 

 

 

 

 

BZV49-C2V4

2Y4

BZV49-C6V2

6Y2

BZV49-C16

16Y

BZV49-C43

43Y

BZV49-C2V7

2Y7

BZV49-C6V8

6Y8

BZV49-C18

18Y

BZV49-C47

47Y

BZV49-C3V0

3Y0

BZV49-C7V5

7Y5

BZV49-C20

20Y

BZV49-C51

51Y

 

 

 

 

 

 

 

 

BZV49-C3Y3

3Y3

BZV49-C8V2

8Y2

BZV49-C22

22Y

BZV49-C56

56Y

BZV49-C3V6

3Y6

BZV49-C9V1

9Y1

BZV49-C24

24Y

BZV49-C62

62Y

 

 

 

 

 

 

 

 

BZV49-C3V9

3Y9

BZV49-C10

10Y

BZV49-C27

27Y

BZV49-C68

68Y

 

 

 

 

 

 

 

 

BZV49-C4V3

4Y3

BZV49-C11

11Y

BZV49-C30

30Y

BZV49-C75

75Y

BZV49-C4V7

4Y7

BZV49-C12

12Y

BZV49-C33

33Y

BZV49-C5V1

5Y1

BZV49-C13

13Y

BZV49-C36

36Y

 

 

 

 

 

 

 

 

BZV49-C5V6

5Y6

BZV49-C15

15Y

BZV49-C39

39Y

2005 Feb 03

2

NXP Semiconductors

 

 

 

Product data sheet

 

 

 

 

 

 

Voltage regulator diodes

 

BZV49 series

 

 

 

 

 

 

 

LIMITING VALUES

 

 

 

 

 

In accordance with the Absolute Maximum Rating System (IEC 60134).

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

 

MAX.

UNIT

 

 

 

 

 

 

 

IF

continuous forward current

 

 

250

mA

IZSM

non-repetitive peak reverse current

tp = 100 μs; square wave;

see Table

 

 

 

 

Tj = 25 °C prior to surge

“Per type”

 

 

Ptot

total power dissipation

Tamb = 25 °C; note 1

 

1

W

PZSM

non-repetitive peak reverse power

tp = 100 μs; square wave;

 

40

W

 

dissipation

Tj = 25 °C prior to surge; see Fig.2

 

 

 

 

Tstg

storage temperature

 

−65

 

+150

°C

Tj

junction temperature

 

 

150

°C

Note

1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.

ELECTRICAL CHARACTERISTICS

Total series

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

 

 

 

 

 

VF

forward voltage

IF = 50 mA; see Fig.3

1

V

2005 Feb 03

3

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