NXP PDTC143TE, PDTC143TEF, PDTC143TK, PDTC143TM, PDTC143TS Schematic [ru]

DATA SH EET

Product data sheet

Supersedes data of 2004 Apr 06

2004 Aug 06

DISCRETE SEMICONDUCTORS

PDTC143T series

NPN resistor-equipped transistors;

R1 = 4.7 kΩ, R2 = open

2004 Aug 06 2

NXP Semiconductors Product data sheet

NPN resistor-equipped transistors;

R1 = 4.7 kΩ, R2 = open

PDTC143T series

FEATURES

• Built-in bias resistors

• Simplified circuit design

• Reduction of component count

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit applications.

QUICK REFERENCE DATA

DESCRIPTION

NPN resistor-equipped transistor (see “Simplified outline,

symbol and pinning” for package details).

SYMBOL PARAMETER TYP. MAX. UNIT

V

CEO

collector-emitter

voltage

− 50 V

I

O

output current (DC) − 100 mA

R1 bias resistor 4.7 − kΩ

R2 open − − −

PRODUCT OVERVIEW

Note

1. * = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

T YPE NUMBER

PACKAGE

MARKING CODE PNP COMPLEMENT

PHILIPS EIAJ

PDTC143TE SOT416 SC-75 40 PDTA143TE

PDTC143TEF SOT490 SC-89 11 PDTA143TEF

PDTC143TK SOT346 SC-59 52 PDTA143TK

PDTC143TM SOT883 SC-101 DM PDTA143TM

PDTC143TS SOT54 (TO-92) SC-43 TC143T PDTA143TS

PDTC143TT SOT23 − *33

(1)

PDTA143TT

PDTC143TU SOT323 SC-70 *52

(1)

PDTA143TU

2004 Aug 06 3

NXP Semiconductors Product data sheet

NPN resistor-equipped transistors;

R1 = 4.7 kΩ, R2 = open

PDTC143T series

SIMPLIFIED OUTLINE, SYMBOL AND PINNING

T YPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL

PINNING

PIN DESCRIPTION

PDTC143TS 1 base

2 collector

3 emitter

PDTC143TE 1 base

PDTC143TEF 2 emitter

PDTC143TK 3 collector

PDTC143TT

PDTC143TU

PDTC143TM 1 base

2 emitter

3 collector

handbook, halfpage

MAM361

1

2

3

2

3

1

R1

handbook, halfpage

MDB270

1

2

3

Top view

R1

1

2

3

handbook, halfpage

MHC507

1

2

3

R1

2

1

3

Bottom view

2004 Aug 06 4

NXP Semiconductors Product data sheet

NPN resistor-equipped transistors;

R1 = 4.7 kΩ, R2 = open

PDTC143T series

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

Notes

1. Refer to standard mounting conditions.

2. Reflow soldering is the only recommended soldering method.

3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.

TYPE NUMBER

PACKAGE

NAME DESCRIPTION VERSION

PDTC143TE − plastic surface mounted package; 3 leads SOT416

PDTC143TEF − plastic surface mounted package; 3 leads SOT490

PDTC143TK − plastic surface mounted package; 3 leads SOT346

PDTC143TM − leadless ultra small plastic package; 3 solder lands; body

1.0

× 0.6 × 0.5 mm

SOT883

PDTC143TS − plastic single-ended leaded (through hole) package; 3 leads SOT54

PDTC143TT − plastic surface mounted package; 3 leads SOT23

PDTC143TU − plastic surface mounted package; 3 leads SOT323

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter − 50 V

V

CEO

collector-emitter voltage open base − 50 V

V

EBO

emitter-base voltage open collector − 5 V

I

O

output current (DC) − 100 mA

I

CM

collector current − 100 mA

P

tot

total power dissipation T

amb

≤ 25 °C

SOT54 note 1 − 500 mW

SOT23 note 1 − 250 mW

SOT346 note 1 − 250 mW

SOT323 note 1 − 200 mW

SOT490 notes 1 and 2 − 250 mW

SOT883 notes 2 and 3 − 250 mW

SOT416 note 1 − 150 mW

T

stg

storage temperature −65 +150 °C

T

j

junction temperature − 150 °C

T

amb

operating ambient

temperature

−65 +150 °C

2004 Aug 06 5

NXP Semiconductors Product data sheet

NPN resistor-equipped transistors;

R1 = 4.7 kΩ, R2 = open

PDTC143T series

THERMAL CHARACTERISTICS

Notes

1. Refer to standard mounting conditions.

2. Reflow soldering is the only recommended soldering method.

3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.

CHARACTERISTICS

T

amb

= 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air

SOT54 note 1 250 K/W

SOT23 note 1 500 K/W

SOT346 note 1 500 K/W

SOT323 note 1 625 K/W

SOT490 notes 1 and 2 500 K/W

SOT883 notes 2 and 3 500 K/W

SOT416 note 1 833 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

collector-base cut-off curren t V

CB

= 50 V; I

E

= 0 A − − 100 nA

I

CEO

collector-emitter cut-off current V

CE

= 30 V; I

B

= 0 A − − 1 μA

V

CE

= 30 V; I

B

= 0 A; T

j

= 150 °C − − 50 μA

I

EBO

emitter-base cut-off current V

EB

= 5 V; I

C

= 0 A − − 100 nA

h

FE

DC current gain V

CE

= 5 V; I

C

= 1 mA 200 − −

V

CEsat

collector-emitter saturation voltage I

C

= 5 mA; I

B

= 0.25 mA − − 100 mV

R1 input resistor 3.3 4.7 6.1 kΩ

C

c

collector capacitance I

E

= i

e

= 0 A; V

CB

= 10 V;

f

= 1 MHz

− − 2.5 pF